TY - JOUR
T1 - Improvement of interfacial electron extraction efficiency by suppressing Auger recombination in an indium-doped mixed cationic perovskite heterostructure
AU - Li, Gaofang
AU - Huang, Chenguang
AU - Liu, Xiaolin
AU - Wang, Yanan
AU - Lin, Jia
AU - Wang, Chen
AU - Lin, Xian
AU - Ma, Guohong
AU - Huang, Zhiming
AU - Chu, Junhao
N1 - Publisher Copyright:
© 2024 Elsevier B.V.
PY - 2025/3/1
Y1 - 2025/3/1
N2 - The electron extraction of indium (In3+)-doped mixed cationic perovskite heterostructure, SnO2/Cs0.05(MA0.17FA0.83)0.95Pb(I0.83Br0.17)3:In3+ (SnO2/M:In3+), is explored by optical pump-terahertz (THz) probe technology. The difference of the conductivity maxima (Δσdm) of M and SnO2/M is used to calculate the electron extraction efficiency of SnO2/M with photoexcited carrier density of 2.66 × 1018 ∼ 1.33 × 1019 cm−3, which are 33.14 %, 32.01 %, 31.17 %, −3.73 %, and –23.66 %, respectively. The negative electron extraction efficiency of SnO2/M with photoexcited carrier density from 1.06 × 1019 to 1.33 × 1019 cm−3 is caused by the extraction of electrons from SnO2 into M. For SnO2/M:In3+, electron extraction efficiencies are 51.76 %, 52.68 %, 49.51 %, 48.03 % and 48.03 % with photoexcited carrier density increased from 2.66 × 1018 cm−3 to1.33 × 1019 cm−3, respectively, which are all positive and about 20 % higher than that of SnO2/M, related to the suppression of Auger recombination and super-injection phenomenon by In3+ doping. The insights of this investigation provide important experimental data and theoretical basis for design and production of efficient perovskite solar cells.
AB - The electron extraction of indium (In3+)-doped mixed cationic perovskite heterostructure, SnO2/Cs0.05(MA0.17FA0.83)0.95Pb(I0.83Br0.17)3:In3+ (SnO2/M:In3+), is explored by optical pump-terahertz (THz) probe technology. The difference of the conductivity maxima (Δσdm) of M and SnO2/M is used to calculate the electron extraction efficiency of SnO2/M with photoexcited carrier density of 2.66 × 1018 ∼ 1.33 × 1019 cm−3, which are 33.14 %, 32.01 %, 31.17 %, −3.73 %, and –23.66 %, respectively. The negative electron extraction efficiency of SnO2/M with photoexcited carrier density from 1.06 × 1019 to 1.33 × 1019 cm−3 is caused by the extraction of electrons from SnO2 into M. For SnO2/M:In3+, electron extraction efficiencies are 51.76 %, 52.68 %, 49.51 %, 48.03 % and 48.03 % with photoexcited carrier density increased from 2.66 × 1018 cm−3 to1.33 × 1019 cm−3, respectively, which are all positive and about 20 % higher than that of SnO2/M, related to the suppression of Auger recombination and super-injection phenomenon by In3+ doping. The insights of this investigation provide important experimental data and theoretical basis for design and production of efficient perovskite solar cells.
KW - Auger recombination
KW - Indium doping
KW - Interfacial electron extraction efficiency
KW - Perovskite heterostructure
UR - https://www.scopus.com/pages/publications/85209746286
U2 - 10.1016/j.apsusc.2024.161819
DO - 10.1016/j.apsusc.2024.161819
M3 - 文章
AN - SCOPUS:85209746286
SN - 0169-4332
VL - 684
JO - Applied Surface Science
JF - Applied Surface Science
M1 - 161819
ER -