Improvement of GaN-based light-emitting diodes using surface-textured Indium-Tin-Oxide transparent ohmic contacts

Y. Yao, C. C. Jin, Z. Dong, Z. Sun, S. M. Huang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

To improve the extraction efficiency of GaN-based light-emitting diodes (LEDs), surface-textured Indium-Tin-Oxide (ITO) transparent ohmic contact layers have been fabricated by utilizing inductively coupled plasma etching technology and natural lithography with polystyrene spheres as the etching mask without destroying the P-GaN. The morphologies of the textured ITO surface were examined and characterized by a scanning electron microscope. The optimized and detailed parameters of the texturing process are reported. The fabricated LEDs with the surface-textured ITO ohmic contacts produce a luminance intensity that exceeds that of the traditional planar-surface LEDs by around 70% at 20 mA dc current.

Original languageEnglish
Title of host publicationAD'07 - Proceedings of Asia Display 2007
Pages1570-1573
Number of pages4
StatePublished - 2007
EventAsia Display 2007, AD'07 - Shanghai, China
Duration: 12 Mar 200716 Mar 2007

Publication series

NameAD'07 - Proceedings of Asia Display 2007
Volume2

Conference

ConferenceAsia Display 2007, AD'07
Country/TerritoryChina
CityShanghai
Period12/03/0716/03/07

Keywords

  • GaN-based light-emitting diodes (LEDs)
  • Indium-tin-oxide(ITO)
  • Natural lithography
  • Surface textured

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