Improvement of Curie temperature in Mn selectively δ-doped GaAs/AlGaAs heterostructures by self-consistent analysis

Ye Shen; Jiqing Wang; Huaizhong Xing; Jianguo Yu; Huibing Mao; Bin Lv

doi:10.1016/j.jmmm.2006.11.209

Improvement of Curie temperature in Mn selectively δ-doped GaAs/AlGaAs heterostructures by self-consistent analysis

Ye Shen
, Jiqing Wang^*
, Huaizhong Xing
, Jianguo Yu
, Huibing Mao
, Bin Lv

^*Corresponding author for this work

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We present a self-consistent analysis of the Curie temperature (T_c) modulation in Mn δ-doped GaAs/Be-doped AlGaAs heterostructures. Considering the influences of both Mn dopants and Hartree potential, we solve simultaneously the Schrödinger and Poisson equations for different Mn δ-doping positions (d_s) and uncompensated Mn atom concentration (N_Mn). Under low dopant concentration (N_Mn < 4 × 10¹⁵ / m²), the peak position of the two-dimensional hole gas envelope function is fixed at 4 nm distance away from the heterointerface, which is independent of delta-doping position. Further increasing the effective Mn concentration will lead to the remarkable shift of the envelope function. T_c of the heterostructure can be enhanced up to 1.6 times under optimized calculational parameters. Our theoretical results agree well with experimental results available for this system.

Original language	English
Pages (from-to)	17-20
Number of pages	4
Journal	Journal of Magnetism and Magnetic Materials
Volume	313
Issue number	1
DOIs	https://doi.org/10.1016/j.jmmm.2006.11.209
State	Published - Jun 2007

Keywords

Curie temperature
GaAs/AlGaAs
Mn δ-doping
Self-consistent analysis

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10.1016/j.jmmm.2006.11.209

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@article{ade4f48d4c45419db4ebd2b94570b16d,

title = "Improvement of Curie temperature in Mn selectively δ-doped GaAs/AlGaAs heterostructures by self-consistent analysis",

abstract = "We present a self-consistent analysis of the Curie temperature (Tc) modulation in Mn δ-doped GaAs/Be-doped AlGaAs heterostructures. Considering the influences of both Mn dopants and Hartree potential, we solve simultaneously the Schr{\"o}dinger and Poisson equations for different Mn δ-doping positions (ds) and uncompensated Mn atom concentration (NMn). Under low dopant concentration (NMn < 4 × 1015 / m2), the peak position of the two-dimensional hole gas envelope function is fixed at 4 nm distance away from the heterointerface, which is independent of delta-doping position. Further increasing the effective Mn concentration will lead to the remarkable shift of the envelope function. Tc of the heterostructure can be enhanced up to 1.6 times under optimized calculational parameters. Our theoretical results agree well with experimental results available for this system.",

keywords = "Curie temperature, GaAs/AlGaAs, Mn δ-doping, Self-consistent analysis",

author = "Ye Shen and Jiqing Wang and Huaizhong Xing and Jianguo Yu and Huibing Mao and Bin Lv",

year = "2007",

month = jun,

doi = "10.1016/j.jmmm.2006.11.209",

language = "英语",

volume = "313",

pages = "17--20",

journal = "Journal of Magnetism and Magnetic Materials",

issn = "0304-8853",

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TY - JOUR

T1 - Improvement of Curie temperature in Mn selectively δ-doped GaAs/AlGaAs heterostructures by self-consistent analysis

AU - Shen, Ye

AU - Wang, Jiqing

AU - Xing, Huaizhong

AU - Yu, Jianguo

AU - Mao, Huibing

AU - Lv, Bin

PY - 2007/6

Y1 - 2007/6

N2 - We present a self-consistent analysis of the Curie temperature (Tc) modulation in Mn δ-doped GaAs/Be-doped AlGaAs heterostructures. Considering the influences of both Mn dopants and Hartree potential, we solve simultaneously the Schrödinger and Poisson equations for different Mn δ-doping positions (ds) and uncompensated Mn atom concentration (NMn). Under low dopant concentration (NMn < 4 × 1015 / m2), the peak position of the two-dimensional hole gas envelope function is fixed at 4 nm distance away from the heterointerface, which is independent of delta-doping position. Further increasing the effective Mn concentration will lead to the remarkable shift of the envelope function. Tc of the heterostructure can be enhanced up to 1.6 times under optimized calculational parameters. Our theoretical results agree well with experimental results available for this system.

AB - We present a self-consistent analysis of the Curie temperature (Tc) modulation in Mn δ-doped GaAs/Be-doped AlGaAs heterostructures. Considering the influences of both Mn dopants and Hartree potential, we solve simultaneously the Schrödinger and Poisson equations for different Mn δ-doping positions (ds) and uncompensated Mn atom concentration (NMn). Under low dopant concentration (NMn < 4 × 1015 / m2), the peak position of the two-dimensional hole gas envelope function is fixed at 4 nm distance away from the heterointerface, which is independent of delta-doping position. Further increasing the effective Mn concentration will lead to the remarkable shift of the envelope function. Tc of the heterostructure can be enhanced up to 1.6 times under optimized calculational parameters. Our theoretical results agree well with experimental results available for this system.

KW - Curie temperature

KW - GaAs/AlGaAs

KW - Mn δ-doping

KW - Self-consistent analysis

UR - https://www.scopus.com/pages/publications/33947635195

U2 - 10.1016/j.jmmm.2006.11.209

DO - 10.1016/j.jmmm.2006.11.209

M3 - 文章

AN - SCOPUS:33947635195

SN - 0304-8853

VL - 313

SP - 17

EP - 20

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

IS - 1

ER -

Improvement of Curie temperature in Mn selectively δ-doped GaAs/AlGaAs heterostructures by self-consistent analysis

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Keywords

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