Improved thermal stability and electrical properties for Al-Sb-Te based phase-change memory

Cheng Peng; Liangcai Wu; Feng Rao; Zhitang Song; Pingxiong Yang; Limin Cheng; Juntao Li; Xilin Zhou; Min Zhu; Bo Liu; Junhao Chu

doi:10.1149/2.014202ssl

Improved thermal stability and electrical properties for Al-Sb-Te based phase-change memory

Cheng Peng, Liangcai Wu, Feng Rao, Zhitang Song, Pingxiong Yang, Limin Cheng, Juntao Li, Xilin Zhou, Min Zhu, Bo Liu, Junhao Chu

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

Phase-change alloys AlSbTe were investigated formaterial and electrical properties. A peak crystallization temperature of 236°C was found with 16.7 at.% Al doping Sb₃Te (AST-16.7%), which showed a 10-year data retention temperature up to 131°C and a melting point as low as 542°C. The phase-change memory device based on AST-16.7% showed good reversible switching characteristics as operation time below 100 ns and low power consumption. Importantly, dramatically rapid SET operation with a shortest pulse width of 7 ns was achieved.

Original language	English
Pages (from-to)	P38-P41
Journal	ECS Solid State Letters
Volume	1
Issue number	2
DOIs	https://doi.org/10.1149/2.014202ssl
State	Published - 2012

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title = "Improved thermal stability and electrical properties for Al-Sb-Te based phase-change memory",

abstract = "Phase-change alloys AlSbTe were investigated formaterial and electrical properties. A peak crystallization temperature of 236°C was found with 16.7 at.\% Al doping Sb3Te (AST-16.7\%), which showed a 10-year data retention temperature up to 131°C and a melting point as low as 542°C. The phase-change memory device based on AST-16.7\% showed good reversible switching characteristics as operation time below 100 ns and low power consumption. Importantly, dramatically rapid SET operation with a shortest pulse width of 7 ns was achieved.",

author = "Cheng Peng and Liangcai Wu and Feng Rao and Zhitang Song and Pingxiong Yang and Limin Cheng and Juntao Li and Xilin Zhou and Min Zhu and Bo Liu and Junhao Chu",

year = "2012",

doi = "10.1149/2.014202ssl",

language = "英语",

volume = "1",

pages = "P38--P41",

journal = "ECS Solid State Letters",

issn = "2162-8742",

publisher = "The Electrochemical Society",

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TY - JOUR

T1 - Improved thermal stability and electrical properties for Al-Sb-Te based phase-change memory

AU - Peng, Cheng

AU - Wu, Liangcai

AU - Rao, Feng

AU - Song, Zhitang

AU - Yang, Pingxiong

AU - Cheng, Limin

AU - Li, Juntao

AU - Zhou, Xilin

AU - Zhu, Min

AU - Liu, Bo

AU - Chu, Junhao

PY - 2012

Y1 - 2012

N2 - Phase-change alloys AlSbTe were investigated formaterial and electrical properties. A peak crystallization temperature of 236°C was found with 16.7 at.% Al doping Sb3Te (AST-16.7%), which showed a 10-year data retention temperature up to 131°C and a melting point as low as 542°C. The phase-change memory device based on AST-16.7% showed good reversible switching characteristics as operation time below 100 ns and low power consumption. Importantly, dramatically rapid SET operation with a shortest pulse width of 7 ns was achieved.

AB - Phase-change alloys AlSbTe were investigated formaterial and electrical properties. A peak crystallization temperature of 236°C was found with 16.7 at.% Al doping Sb3Te (AST-16.7%), which showed a 10-year data retention temperature up to 131°C and a melting point as low as 542°C. The phase-change memory device based on AST-16.7% showed good reversible switching characteristics as operation time below 100 ns and low power consumption. Importantly, dramatically rapid SET operation with a shortest pulse width of 7 ns was achieved.

UR - https://www.scopus.com/pages/publications/84878365019

U2 - 10.1149/2.014202ssl

DO - 10.1149/2.014202ssl

M3 - 文章

AN - SCOPUS:84878365019

SN - 2162-8742

VL - 1

SP - P38-P41

JO - ECS Solid State Letters

JF - ECS Solid State Letters

IS - 2

ER -

Improved thermal stability and electrical properties for Al-Sb-Te based phase-change memory

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