Abstract
A porous silicon (PS)-based iodide ion-selective microelectrode (I-ISME) was fabricated by using a microelectronic planar process and an electrochemical anodization etching technique. The apparent sensing area of the I-ISME is 100×100 μm2. The response time t95% is 8 and 12 s when the concentration change is from low to high and vice versa, respectively. The potentials are constant at pH 1.0-2.0. The calibration curve for the I-ISME is linear within a wide range of 5.0×10-7-1.0×10 -1 M. Its average slope during 12 months is 58.0 mV per decade, which is close to the Nernst response. The detection limit was found to be on the order of 1.0×10-7 M. The sequence of Hofmeister selectivity coefficient (Kpoti,j) of the I-ISME were I-Br- SCN- Cl- SO2-4 NO-3 . Good performances of the I-ISME are attributed to large specific surface area of PS and excellent adhesion between sensing carrier and the surface of PS.
| Original language | English |
|---|---|
| Pages (from-to) | 699-703 |
| Number of pages | 5 |
| Journal | Nanoscience and Nanotechnology Letters |
| Volume | 5 |
| Issue number | 6 |
| DOIs | |
| State | Published - Jun 2013 |
Keywords
- Iodide Ion
- Ion-Selective Electrode
- Microelectrode
- Porous Silicon
- Sol-Gel
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