Improved recrystallization behavior by additional irradiation of Mn+-implanted GaAs studied by Raman scattering

Jiqing Wang; Qiang Zhao; Huaizhong Xing; Jianguo Yu; Huibing Mao; Ye Shen

doi:10.1016/j.nimb.2006.08.010

Improved recrystallization behavior by additional irradiation of Mn⁺-implanted GaAs studied by Raman scattering

Jiqing Wang, Qiang Zhao, Huaizhong Xing, Jianguo Yu, Huibing Mao, Ye Shen

School of Physics and Electronic Science

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1 Scopus citations

Abstract

Raman spectroscopy was employed to study the evolution of host lattice recrystallization in Mn⁺-implanted GaAs both prior to and following irradiation with Ga, As and H ions. The additional irradiation stimulates the regrowth of the host lattice after a thermal anneal of 920 °C. A competitive process between post-implantation-induced damage and recovery in the crystallization process of amorphous GaAs was observed. At a As⁺ fluence level exceeding 8 × 10¹⁵ cm^-2, the self-implantation-enhanced recovery of the crystal dominates the regrowth stage. The vacancy supersaturation produced during additional irradiation is mainly responsible for the enhancement of recrystallization in Mn⁺-implanted GaAs.

Original language	English
Pages (from-to)	263-266
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	252
Issue number	2
DOIs	https://doi.org/10.1016/j.nimb.2006.08.010
State	Published - Nov 2006

Keywords

GaAs
Ion implantation
Raman spectroscopy

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10.1016/j.nimb.2006.08.010

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@article{f45370457fff45e2a87a63547220c9cb,

title = "Improved recrystallization behavior by additional irradiation of Mn+-implanted GaAs studied by Raman scattering",

abstract = "Raman spectroscopy was employed to study the evolution of host lattice recrystallization in Mn+-implanted GaAs both prior to and following irradiation with Ga, As and H ions. The additional irradiation stimulates the regrowth of the host lattice after a thermal anneal of 920 °C. A competitive process between post-implantation-induced damage and recovery in the crystallization process of amorphous GaAs was observed. At a As+ fluence level exceeding 8 × 1015 cm-2, the self-implantation-enhanced recovery of the crystal dominates the regrowth stage. The vacancy supersaturation produced during additional irradiation is mainly responsible for the enhancement of recrystallization in Mn+-implanted GaAs.",

keywords = "GaAs, Ion implantation, Raman spectroscopy",

author = "Jiqing Wang and Qiang Zhao and Huaizhong Xing and Jianguo Yu and Huibing Mao and Ye Shen",

year = "2006",

month = nov,

doi = "10.1016/j.nimb.2006.08.010",

language = "英语",

volume = "252",

pages = "263--266",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

publisher = "Elsevier B.V.",

number = "2",

}

Improved recrystallization behavior by additional irradiation of Mn⁺-implanted GaAs studied by Raman scattering. / Wang, Jiqing; Zhao, Qiang; Xing, Huaizhong et al.
In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 252, No. 2, 11.2006, p. 263-266.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Improved recrystallization behavior by additional irradiation of Mn+-implanted GaAs studied by Raman scattering

AU - Wang, Jiqing

AU - Zhao, Qiang

AU - Xing, Huaizhong

AU - Yu, Jianguo

AU - Mao, Huibing

AU - Shen, Ye

PY - 2006/11

Y1 - 2006/11

N2 - Raman spectroscopy was employed to study the evolution of host lattice recrystallization in Mn+-implanted GaAs both prior to and following irradiation with Ga, As and H ions. The additional irradiation stimulates the regrowth of the host lattice after a thermal anneal of 920 °C. A competitive process between post-implantation-induced damage and recovery in the crystallization process of amorphous GaAs was observed. At a As+ fluence level exceeding 8 × 1015 cm-2, the self-implantation-enhanced recovery of the crystal dominates the regrowth stage. The vacancy supersaturation produced during additional irradiation is mainly responsible for the enhancement of recrystallization in Mn+-implanted GaAs.

AB - Raman spectroscopy was employed to study the evolution of host lattice recrystallization in Mn+-implanted GaAs both prior to and following irradiation with Ga, As and H ions. The additional irradiation stimulates the regrowth of the host lattice after a thermal anneal of 920 °C. A competitive process between post-implantation-induced damage and recovery in the crystallization process of amorphous GaAs was observed. At a As+ fluence level exceeding 8 × 1015 cm-2, the self-implantation-enhanced recovery of the crystal dominates the regrowth stage. The vacancy supersaturation produced during additional irradiation is mainly responsible for the enhancement of recrystallization in Mn+-implanted GaAs.

KW - GaAs

KW - Ion implantation

KW - Raman spectroscopy

UR - https://www.scopus.com/pages/publications/33751104489

U2 - 10.1016/j.nimb.2006.08.010

DO - 10.1016/j.nimb.2006.08.010

M3 - 文章

AN - SCOPUS:33751104489

SN - 0168-583X

VL - 252

SP - 263

EP - 266

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 2

ER -

Improved recrystallization behavior by additional irradiation of Mn⁺-implanted GaAs studied by Raman scattering

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