Improved HEMT device noise equivalent circuit model

Jianjun Gao; Baoxin Gao; Chunguang Liang

Improved HEMT device noise equivalent circuit model

Jianjun Gao^*
, Baoxin Gao
, Chunguang Liang

^*Corresponding author for this work

Tsinghua University

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

This paper presents a new high electron mobility transistor noise model for the SPICE circuit simulator to compensate for correct of the HEME noise model in SPICE. The model consists of two uncorrelated noise sources, an input series noise voltage and an output paralleled noise current. The method is given to extract the noise parameters using matrix technology. The model results agree well with experimental results and are better than those of the HEMT noise model in SPICE. The results show that the device optimum noise coefficient and the noise resistance accuracy are much better.

Original language	English
Pages (from-to)	5-8
Number of pages	4
Journal	Qinghua Daxue Xuebao/Journal of Tsinghua University
Volume	41
Issue number	7
State	Published - Jul 2001
Externally published	Yes

Keywords

Circuit model
Noise parameters
Simulation

Cite this

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title = "Improved HEMT device noise equivalent circuit model",

abstract = "This paper presents a new high electron mobility transistor noise model for the SPICE circuit simulator to compensate for correct of the HEME noise model in SPICE. The model consists of two uncorrelated noise sources, an input series noise voltage and an output paralleled noise current. The method is given to extract the noise parameters using matrix technology. The model results agree well with experimental results and are better than those of the HEMT noise model in SPICE. The results show that the device optimum noise coefficient and the noise resistance accuracy are much better.",

keywords = "Circuit model, Noise parameters, Simulation",

author = "Jianjun Gao and Baoxin Gao and Chunguang Liang",

year = "2001",

month = jul,

language = "英语",

volume = "41",

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journal = "Qinghua Daxue Xuebao/Journal of Tsinghua University",

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number = "7",

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TY - JOUR

T1 - Improved HEMT device noise equivalent circuit model

AU - Gao, Jianjun

AU - Gao, Baoxin

AU - Liang, Chunguang

PY - 2001/7

Y1 - 2001/7

N2 - This paper presents a new high electron mobility transistor noise model for the SPICE circuit simulator to compensate for correct of the HEME noise model in SPICE. The model consists of two uncorrelated noise sources, an input series noise voltage and an output paralleled noise current. The method is given to extract the noise parameters using matrix technology. The model results agree well with experimental results and are better than those of the HEMT noise model in SPICE. The results show that the device optimum noise coefficient and the noise resistance accuracy are much better.

AB - This paper presents a new high electron mobility transistor noise model for the SPICE circuit simulator to compensate for correct of the HEME noise model in SPICE. The model consists of two uncorrelated noise sources, an input series noise voltage and an output paralleled noise current. The method is given to extract the noise parameters using matrix technology. The model results agree well with experimental results and are better than those of the HEMT noise model in SPICE. The results show that the device optimum noise coefficient and the noise resistance accuracy are much better.

KW - Circuit model

KW - Noise parameters

KW - Simulation

UR - https://www.scopus.com/pages/publications/0035401497

M3 - 文章

AN - SCOPUS:0035401497

SN - 1000-0054

VL - 41

SP - 5

EP - 8

JO - Qinghua Daxue Xuebao/Journal of Tsinghua University

JF - Qinghua Daxue Xuebao/Journal of Tsinghua University

IS - 7

ER -

Improved HEMT device noise equivalent circuit model

Abstract

Keywords

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