TY - JOUR
T1 - Improved dielectric and electrical properties of (Ba,Sr)TiO3 thin films using Pt/LaNiO3 as the top-electrode material
AU - Gao, Y. H.
AU - Sun, J. L.
AU - Ma, J. H.
AU - Meng, X. J.
AU - Chu, J. H.
PY - 2008/6
Y1 - 2008/6
N2 - (Ba,Sr)TiO3 (BST) capacitors grown on a LaNiO3 (LNO) bottom electrode, with Pt (80 nm), LNO (100 nm), and double-layer Pt/LNO (80/10 nm) top electrodes have been investigated. It was found that the dielectric behavior is improved by a decrease of the electrical properties for the BST capacitor using double-layer Pt/LNO top electrodes. The dielectric constant of 100 nm-thick BST films with a Pt electrode was only 165 at 100 kHz, while that with a double-layer electrode was about 242. Correspondingly, the tunability was greatly improved from 26% to 41% with an electric field of 600 kV/cm. These have been attributed to increased interfacial capacitance density, which resulted from an improved interface, between the films and the top electrode. The dielectric loss was also reduced by using a double-layer electrode. Furthermore, the leakage current of a capacitor with a double-layer Pt/LNO electrode was one order of magnitude lower than that with a single LNO electrode. It can be explained by the fact that the weak chemical interaction between LNO (10 nm) and BST causes a high potential barrier at the interface.
AB - (Ba,Sr)TiO3 (BST) capacitors grown on a LaNiO3 (LNO) bottom electrode, with Pt (80 nm), LNO (100 nm), and double-layer Pt/LNO (80/10 nm) top electrodes have been investigated. It was found that the dielectric behavior is improved by a decrease of the electrical properties for the BST capacitor using double-layer Pt/LNO top electrodes. The dielectric constant of 100 nm-thick BST films with a Pt electrode was only 165 at 100 kHz, while that with a double-layer electrode was about 242. Correspondingly, the tunability was greatly improved from 26% to 41% with an electric field of 600 kV/cm. These have been attributed to increased interfacial capacitance density, which resulted from an improved interface, between the films and the top electrode. The dielectric loss was also reduced by using a double-layer electrode. Furthermore, the leakage current of a capacitor with a double-layer Pt/LNO electrode was one order of magnitude lower than that with a single LNO electrode. It can be explained by the fact that the weak chemical interaction between LNO (10 nm) and BST causes a high potential barrier at the interface.
UR - https://www.scopus.com/pages/publications/42449115632
U2 - 10.1007/s00339-008-4445-y
DO - 10.1007/s00339-008-4445-y
M3 - 文章
AN - SCOPUS:42449115632
SN - 0947-8396
VL - 91
SP - 541
EP - 544
JO - Applied Physics A: Materials Science and Processing
JF - Applied Physics A: Materials Science and Processing
IS - 3
ER -