Improved approach for determination of pad model parameters for SiGe HBT

Yongli Wang; Ling Sun; Jianjun Gao

Improved approach for determination of pad model parameters for SiGe HBT

Yongli Wang^*
, Ling Sun
, Jianjun Gao

^*Corresponding author for this work

Southeast University, Nanjing

Research output: Contribution to journal › Article › peer-review

Abstract

A new method for determining the pad parasitic elements of Si-based devices is presented. Comparison between the new method and approximation method shows that the parasitic elements of the pad extracted by linear fitting method presented in this paper is more accurate. Once the pad parameters are obtained, small-signal equivalent circuit parameters of SiGe HBT implemented with AMS 0.35 μm BiCOMS technology are extracted. The extrinsic resistances are determined under 'over drive I_B' bias condition, and the intrinsic elements are all calculated by using analytical method. Good agreement is achieved between simulated and measured results of the transistor over the test frequency range.

Original language	English
Pages (from-to)	493-497+544
Journal	Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics
Volume	27
Issue number	4
State	Published - Nov 2007
Externally published	Yes

Keywords

Heterojunction bipolar transistor (HBT)
Pad
Parameter extraction
SiGe

Cite this

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title = "Improved approach for determination of pad model parameters for SiGe HBT",

abstract = "A new method for determining the pad parasitic elements of Si-based devices is presented. Comparison between the new method and approximation method shows that the parasitic elements of the pad extracted by linear fitting method presented in this paper is more accurate. Once the pad parameters are obtained, small-signal equivalent circuit parameters of SiGe HBT implemented with AMS 0.35 μm BiCOMS technology are extracted. The extrinsic resistances are determined under 'over drive IB' bias condition, and the intrinsic elements are all calculated by using analytical method. Good agreement is achieved between simulated and measured results of the transistor over the test frequency range.",

keywords = "Heterojunction bipolar transistor (HBT), Pad, Parameter extraction, SiGe",

author = "Yongli Wang and Ling Sun and Jianjun Gao",

year = "2007",

month = nov,

language = "英语",

volume = "27",

pages = "493--497+544",

journal = "Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics",

issn = "1000-3819",

publisher = "Research Progress of Solid State Electronics",

number = "4",

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TY - JOUR

T1 - Improved approach for determination of pad model parameters for SiGe HBT

AU - Wang, Yongli

AU - Sun, Ling

AU - Gao, Jianjun

PY - 2007/11

Y1 - 2007/11

N2 - A new method for determining the pad parasitic elements of Si-based devices is presented. Comparison between the new method and approximation method shows that the parasitic elements of the pad extracted by linear fitting method presented in this paper is more accurate. Once the pad parameters are obtained, small-signal equivalent circuit parameters of SiGe HBT implemented with AMS 0.35 μm BiCOMS technology are extracted. The extrinsic resistances are determined under 'over drive IB' bias condition, and the intrinsic elements are all calculated by using analytical method. Good agreement is achieved between simulated and measured results of the transistor over the test frequency range.

AB - A new method for determining the pad parasitic elements of Si-based devices is presented. Comparison between the new method and approximation method shows that the parasitic elements of the pad extracted by linear fitting method presented in this paper is more accurate. Once the pad parameters are obtained, small-signal equivalent circuit parameters of SiGe HBT implemented with AMS 0.35 μm BiCOMS technology are extracted. The extrinsic resistances are determined under 'over drive IB' bias condition, and the intrinsic elements are all calculated by using analytical method. Good agreement is achieved between simulated and measured results of the transistor over the test frequency range.

KW - Heterojunction bipolar transistor (HBT)

KW - Pad

KW - Parameter extraction

KW - SiGe

UR - https://www.scopus.com/pages/publications/38549147097

M3 - 文章

AN - SCOPUS:38549147097

SN - 1000-3819

VL - 27

SP - 493-497+544

JO - Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics

JF - Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics

IS - 4

ER -

Improved approach for determination of pad model parameters for SiGe HBT

Abstract

Keywords

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