Improved analytical method for determination of small-signal equivalent-circuit model parameters for InP/InGaAs HBTs

J. Gao; X. Li; H. Wang; G. Boeck

doi:10.1049/ip-cds:20045174

Improved analytical method for determination of small-signal equivalent-circuit model parameters for InP/InGaAs HBTs

J. Gao, X. Li, H. Wang, G. Boeck

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

An improved direct extraction method for determination of the small-signal equivalent-circuit model for InP/InGaAs double heterojunction bipolar transistors is presented. This method is based on an accurate small-signal model, which takes into account the base-emitter and collector-emitter metalisations by using two additional capacitances C_mb and C _mc. These capacitances (C_mb and C_mc) are extracted using a set of exact closed-form equations. Significant improvement of the extraction accuracy of the intrinsic base-emitter junction capacitance C_be is obtained by using the new combination method, which is based on the relationship between the conventional T- and PItype equivalent-circuit topology. The approach has been verified over a wide range of bias points using an InP HBT with 5 × 5 μm² emitter area in the frequency range of 50MHz-40GHz.

Original language	English
Pages (from-to)	661-666
Number of pages	6
Journal	IEE Proceedings: Circuits, Devices and Systems
Volume	152
Issue number	6
DOIs	https://doi.org/10.1049/ip-cds:20045174
State	Published - Dec 2005
Externally published	Yes

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title = "Improved analytical method for determination of small-signal equivalent-circuit model parameters for InP/InGaAs HBTs",

abstract = "An improved direct extraction method for determination of the small-signal equivalent-circuit model for InP/InGaAs double heterojunction bipolar transistors is presented. This method is based on an accurate small-signal model, which takes into account the base-emitter and collector-emitter metalisations by using two additional capacitances Cmb and C mc. These capacitances (Cmb and Cmc) are extracted using a set of exact closed-form equations. Significant improvement of the extraction accuracy of the intrinsic base-emitter junction capacitance Cbe is obtained by using the new combination method, which is based on the relationship between the conventional T- and PItype equivalent-circuit topology. The approach has been verified over a wide range of bias points using an InP HBT with 5 × 5 μm2 emitter area in the frequency range of 50MHz-40GHz.",

author = "J. Gao and X. Li and H. Wang and G. Boeck",

year = "2005",

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doi = "10.1049/ip-cds:20045174",

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journal = "IEE Proceedings: Circuits, Devices and Systems",

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TY - JOUR

T1 - Improved analytical method for determination of small-signal equivalent-circuit model parameters for InP/InGaAs HBTs

AU - Gao, J.

AU - Li, X.

AU - Wang, H.

AU - Boeck, G.

PY - 2005/12

Y1 - 2005/12

N2 - An improved direct extraction method for determination of the small-signal equivalent-circuit model for InP/InGaAs double heterojunction bipolar transistors is presented. This method is based on an accurate small-signal model, which takes into account the base-emitter and collector-emitter metalisations by using two additional capacitances Cmb and C mc. These capacitances (Cmb and Cmc) are extracted using a set of exact closed-form equations. Significant improvement of the extraction accuracy of the intrinsic base-emitter junction capacitance Cbe is obtained by using the new combination method, which is based on the relationship between the conventional T- and PItype equivalent-circuit topology. The approach has been verified over a wide range of bias points using an InP HBT with 5 × 5 μm2 emitter area in the frequency range of 50MHz-40GHz.

AB - An improved direct extraction method for determination of the small-signal equivalent-circuit model for InP/InGaAs double heterojunction bipolar transistors is presented. This method is based on an accurate small-signal model, which takes into account the base-emitter and collector-emitter metalisations by using two additional capacitances Cmb and C mc. These capacitances (Cmb and Cmc) are extracted using a set of exact closed-form equations. Significant improvement of the extraction accuracy of the intrinsic base-emitter junction capacitance Cbe is obtained by using the new combination method, which is based on the relationship between the conventional T- and PItype equivalent-circuit topology. The approach has been verified over a wide range of bias points using an InP HBT with 5 × 5 μm2 emitter area in the frequency range of 50MHz-40GHz.

UR - https://www.scopus.com/pages/publications/29144453361

U2 - 10.1049/ip-cds:20045174

DO - 10.1049/ip-cds:20045174

M3 - 文章

AN - SCOPUS:29144453361

SN - 1350-2409

VL - 152

SP - 661

EP - 666

JO - IEE Proceedings: Circuits, Devices and Systems

JF - IEE Proceedings: Circuits, Devices and Systems

IS - 6

ER -

Improved analytical method for determination of small-signal equivalent-circuit model parameters for InP/InGaAs HBTs

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