Impedance characterization of dielectric and semiconducting materials with organic capacitors for organic transistors

A new characterization method based on impedance frequency response analysis at different temperatures has been developed to assess and identify the dielectric and semiconductor materials for organic field-effect transistors (OFET). This method can not only characterize simultaneously dielectric and conductive behaviors of materials but also distinguish individual contributions to electrical conduction or to polarization from layers such as dielectric layer, semiconductor layer, and interfaces in OFET. Two kinds of materials, Urathan and DuPont 5018 A as dielectric materials have been used to make a multilayer organic capacitor. It has been observed that Urathan, due to its lower conductivity, non-metallic conduction behavior at high temperature, and lower interfacial resistance, is more suitable as dielectric layer for OFET. Urathan appears an enhancement in conductivity by heating following an Arrhenius law with an activation energy transition from 0.002 to 0.24 eV at ∼307 K, which originates from band tail hopping that occurs around the Fermi edge. At ∼314 K, a dielectric transition also occurs, which is interpreted as a combination of electron polarization associated to the band tail hopping. The materials were used to fabricate OEFT, which performance was in agreement with that obtained from impedance analysis of the organic capacitor.