Impact of sulfur doping on broadband terahertz emission in gallium selenide single crystals via optical rectification

Gaofang Li; Renjie Huang; Jingguo Huang; Wenjie Zhang; Haoyang Cui; Nenghong Xia; Zhiming Huang; Junhao Chu; Guohong Ma

doi:10.35848/1882-0786/ac06ad

Impact of sulfur doping on broadband terahertz emission in gallium selenide single crystals via optical rectification

Gaofang Li, Renjie Huang, Jingguo Huang, Wenjie Zhang, Haoyang Cui, Nenghong Xia, Zhiming Huang, Junhao Chu, Guohong Ma

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

The impact of sulfur doping on broadband terahertz emission in GaSe single crystals was investigated by optical rectification with oo-o phase matching. The maximum peak value of THz radiation generated from S-doped 2.5 mass% GaSe is 28.3% larger than that of intrinsic GaSe with pump fluence of 637 mW cm-2 and azimuthal angle of 0o. The saturation of THz emission in S-doped 2.5 mass% GaSe is increased compared with that of intrinsic and S-doped 7 mass% GaSe. The results demonstrate that GaSe with appropriate S-doping concentration can effectively improve the broadband THz radiation and saturation.

Original language	English
Article number	072004
Journal	Applied Physics Express
Volume	14
Issue number	7
DOIs	https://doi.org/10.35848/1882-0786/ac06ad
State	Published - Jul 2021
Externally published	Yes

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@article{b09bc27a70a448f18771b6c7f3412031,

title = "Impact of sulfur doping on broadband terahertz emission in gallium selenide single crystals via optical rectification",

abstract = "The impact of sulfur doping on broadband terahertz emission in GaSe single crystals was investigated by optical rectification with oo-o phase matching. The maximum peak value of THz radiation generated from S-doped 2.5 mass\% GaSe is 28.3\% larger than that of intrinsic GaSe with pump fluence of 637 mW cm-2 and azimuthal angle of 0o. The saturation of THz emission in S-doped 2.5 mass\% GaSe is increased compared with that of intrinsic and S-doped 7 mass\% GaSe. The results demonstrate that GaSe with appropriate S-doping concentration can effectively improve the broadband THz radiation and saturation.",

author = "Gaofang Li and Renjie Huang and Jingguo Huang and Wenjie Zhang and Haoyang Cui and Nenghong Xia and Zhiming Huang and Junhao Chu and Guohong Ma",

note = "Publisher Copyright: {\textcopyright} 2021 The Japan Society of Applied Physics.",

year = "2021",

month = jul,

doi = "10.35848/1882-0786/ac06ad",

language = "英语",

volume = "14",

journal = "Applied Physics Express",

issn = "1882-0778",

publisher = "Japan Society of Applied Physics",

number = "7",

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TY - JOUR

T1 - Impact of sulfur doping on broadband terahertz emission in gallium selenide single crystals via optical rectification

AU - Li, Gaofang

AU - Huang, Renjie

AU - Huang, Jingguo

AU - Zhang, Wenjie

AU - Cui, Haoyang

AU - Xia, Nenghong

AU - Huang, Zhiming

AU - Chu, Junhao

AU - Ma, Guohong

PY - 2021/7

Y1 - 2021/7

N2 - The impact of sulfur doping on broadband terahertz emission in GaSe single crystals was investigated by optical rectification with oo-o phase matching. The maximum peak value of THz radiation generated from S-doped 2.5 mass% GaSe is 28.3% larger than that of intrinsic GaSe with pump fluence of 637 mW cm-2 and azimuthal angle of 0o. The saturation of THz emission in S-doped 2.5 mass% GaSe is increased compared with that of intrinsic and S-doped 7 mass% GaSe. The results demonstrate that GaSe with appropriate S-doping concentration can effectively improve the broadband THz radiation and saturation.

AB - The impact of sulfur doping on broadband terahertz emission in GaSe single crystals was investigated by optical rectification with oo-o phase matching. The maximum peak value of THz radiation generated from S-doped 2.5 mass% GaSe is 28.3% larger than that of intrinsic GaSe with pump fluence of 637 mW cm-2 and azimuthal angle of 0o. The saturation of THz emission in S-doped 2.5 mass% GaSe is increased compared with that of intrinsic and S-doped 7 mass% GaSe. The results demonstrate that GaSe with appropriate S-doping concentration can effectively improve the broadband THz radiation and saturation.

UR - https://www.scopus.com/pages/publications/85109954376

U2 - 10.35848/1882-0786/ac06ad

DO - 10.35848/1882-0786/ac06ad

M3 - 文章

AN - SCOPUS:85109954376

SN - 1882-0778

VL - 14

JO - Applied Physics Express

JF - Applied Physics Express

IS - 7

M1 - 072004

ER -

Impact of sulfur doping on broadband terahertz emission in gallium selenide single crystals via optical rectification

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