Impact of Process Fluctuations on Reconfigurable Silicon Nanowire Transistor

Xianglong Li; Xiaoqiao Yang; Zhe Zhang; Teng Wang; Yabin Sun; Ziyu Liu; Xiaojin Li; Yanling Shi; Jun Xu

doi:10.1109/TED.2020.3045689

Impact of Process Fluctuations on Reconfigurable Silicon Nanowire Transistor

Xianglong Li
, Xiaoqiao Yang
, Zhe Zhang
, Teng Wang
, Yabin Sun^*
, Ziyu Liu
, Xiaojin Li
, Yanling Shi
, Jun Xu

^*Corresponding author for this work

School of Communication and Electronic Engineering

East China Normal University
Peking University
Shanghai Institute of Space Power Sources
Fudan University
Tsinghua University

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

In this article, the impact of intrinsic process fluctuations on reconfigurable field-effect transistor (RFET) is investigated for the first time. Three kinds of process fluctuation sources, including line edge roughness (LER), gate edge roughness (GER), and work-function variation (WFV), are performed in RFET using MATLAB and 3-D TCAD. The variation of ON-state current {I}-{ \mathrm{\scriptscriptstyle ON}} due to LER presents a weak correlation with that of OFF-state current {I}-{ \mathrm{\scriptscriptstyle OFF}}. Performance variation caused by GER is mainly attributed to the control GER. WFV in control gate and source dominates the variations of ON-state characteristics. The total overall performance fluctuations are primarily attributed to WFV. In the sight of {I}-{ \mathrm{\scriptscriptstyle ON}} , WFV contributed up to 84.7% and 82.8% of the total fluctuations for n-and p-Type, respectively.

Original language	English
Article number	9321221
Pages (from-to)	885-891
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	68
Issue number	2
DOIs	https://doi.org/10.1109/TED.2020.3045689
State	Published - Feb 2021

Keywords

Gate edge roughness (GER)
line edge roughness (LER)
process fluctuation
reconfigurable field-effect transistor (RFET)
silicon nanowire (SiNW)
work-function variation (WFV)

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10.1109/TED.2020.3045689

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@article{f47aa13ce968407088969a09e65b2953,

title = "Impact of Process Fluctuations on Reconfigurable Silicon Nanowire Transistor",

abstract = "In this article, the impact of intrinsic process fluctuations on reconfigurable field-effect transistor (RFET) is investigated for the first time. Three kinds of process fluctuation sources, including line edge roughness (LER), gate edge roughness (GER), and work-function variation (WFV), are performed in RFET using MATLAB and 3-D TCAD. The variation of ON-state current \{I\}-\{ \textbackslash{}mathrm\{\textbackslash{}scriptscriptstyle ON\}\} due to LER presents a weak correlation with that of OFF-state current \{I\}-\{ \textbackslash{}mathrm\{\textbackslash{}scriptscriptstyle OFF\}\}. Performance variation caused by GER is mainly attributed to the control GER. WFV in control gate and source dominates the variations of ON-state characteristics. The total overall performance fluctuations are primarily attributed to WFV. In the sight of \{I\}-\{ \textbackslash{}mathrm\{\textbackslash{}scriptscriptstyle ON\}\} , WFV contributed up to 84.7\% and 82.8\% of the total fluctuations for n-and p-Type, respectively.",

keywords = "Gate edge roughness (GER), line edge roughness (LER), process fluctuation, reconfigurable field-effect transistor (RFET), silicon nanowire (SiNW), work-function variation (WFV)",

author = "Xianglong Li and Xiaoqiao Yang and Zhe Zhang and Teng Wang and Yabin Sun and Ziyu Liu and Xiaojin Li and Yanling Shi and Jun Xu",

note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2021",

month = feb,

doi = "10.1109/TED.2020.3045689",

language = "英语",

volume = "68",

pages = "885--891",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "2",

}

TY - JOUR

T1 - Impact of Process Fluctuations on Reconfigurable Silicon Nanowire Transistor

AU - Li, Xianglong

AU - Yang, Xiaoqiao

AU - Zhang, Zhe

AU - Wang, Teng

AU - Sun, Yabin

AU - Liu, Ziyu

AU - Li, Xiaojin

AU - Shi, Yanling

AU - Xu, Jun

PY - 2021/2

Y1 - 2021/2

N2 - In this article, the impact of intrinsic process fluctuations on reconfigurable field-effect transistor (RFET) is investigated for the first time. Three kinds of process fluctuation sources, including line edge roughness (LER), gate edge roughness (GER), and work-function variation (WFV), are performed in RFET using MATLAB and 3-D TCAD. The variation of ON-state current {I}-{ \mathrm{\scriptscriptstyle ON}} due to LER presents a weak correlation with that of OFF-state current {I}-{ \mathrm{\scriptscriptstyle OFF}}. Performance variation caused by GER is mainly attributed to the control GER. WFV in control gate and source dominates the variations of ON-state characteristics. The total overall performance fluctuations are primarily attributed to WFV. In the sight of {I}-{ \mathrm{\scriptscriptstyle ON}} , WFV contributed up to 84.7% and 82.8% of the total fluctuations for n-and p-Type, respectively.

AB - In this article, the impact of intrinsic process fluctuations on reconfigurable field-effect transistor (RFET) is investigated for the first time. Three kinds of process fluctuation sources, including line edge roughness (LER), gate edge roughness (GER), and work-function variation (WFV), are performed in RFET using MATLAB and 3-D TCAD. The variation of ON-state current {I}-{ \mathrm{\scriptscriptstyle ON}} due to LER presents a weak correlation with that of OFF-state current {I}-{ \mathrm{\scriptscriptstyle OFF}}. Performance variation caused by GER is mainly attributed to the control GER. WFV in control gate and source dominates the variations of ON-state characteristics. The total overall performance fluctuations are primarily attributed to WFV. In the sight of {I}-{ \mathrm{\scriptscriptstyle ON}} , WFV contributed up to 84.7% and 82.8% of the total fluctuations for n-and p-Type, respectively.

KW - Gate edge roughness (GER)

KW - line edge roughness (LER)

KW - process fluctuation

KW - reconfigurable field-effect transistor (RFET)

KW - silicon nanowire (SiNW)

KW - work-function variation (WFV)

UR - https://www.scopus.com/pages/publications/85099590636

U2 - 10.1109/TED.2020.3045689

DO - 10.1109/TED.2020.3045689

M3 - 文章

AN - SCOPUS:85099590636

SN - 0018-9383

VL - 68

SP - 885

EP - 891

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 2

M1 - 9321221

ER -

Impact of Process Fluctuations on Reconfigurable Silicon Nanowire Transistor

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