TY - JOUR
T1 - Impact of Process Fluctuations on Reconfigurable Silicon Nanowire Transistor
AU - Li, Xianglong
AU - Yang, Xiaoqiao
AU - Zhang, Zhe
AU - Wang, Teng
AU - Sun, Yabin
AU - Liu, Ziyu
AU - Li, Xiaojin
AU - Shi, Yanling
AU - Xu, Jun
N1 - Publisher Copyright:
© 1963-2012 IEEE.
PY - 2021/2
Y1 - 2021/2
N2 - In this article, the impact of intrinsic process fluctuations on reconfigurable field-effect transistor (RFET) is investigated for the first time. Three kinds of process fluctuation sources, including line edge roughness (LER), gate edge roughness (GER), and work-function variation (WFV), are performed in RFET using MATLAB and 3-D TCAD. The variation of ON-state current {I}-{ \mathrm{\scriptscriptstyle ON}} due to LER presents a weak correlation with that of OFF-state current {I}-{ \mathrm{\scriptscriptstyle OFF}}. Performance variation caused by GER is mainly attributed to the control GER. WFV in control gate and source dominates the variations of ON-state characteristics. The total overall performance fluctuations are primarily attributed to WFV. In the sight of {I}-{ \mathrm{\scriptscriptstyle ON}} , WFV contributed up to 84.7% and 82.8% of the total fluctuations for n-and p-Type, respectively.
AB - In this article, the impact of intrinsic process fluctuations on reconfigurable field-effect transistor (RFET) is investigated for the first time. Three kinds of process fluctuation sources, including line edge roughness (LER), gate edge roughness (GER), and work-function variation (WFV), are performed in RFET using MATLAB and 3-D TCAD. The variation of ON-state current {I}-{ \mathrm{\scriptscriptstyle ON}} due to LER presents a weak correlation with that of OFF-state current {I}-{ \mathrm{\scriptscriptstyle OFF}}. Performance variation caused by GER is mainly attributed to the control GER. WFV in control gate and source dominates the variations of ON-state characteristics. The total overall performance fluctuations are primarily attributed to WFV. In the sight of {I}-{ \mathrm{\scriptscriptstyle ON}} , WFV contributed up to 84.7% and 82.8% of the total fluctuations for n-and p-Type, respectively.
KW - Gate edge roughness (GER)
KW - line edge roughness (LER)
KW - process fluctuation
KW - reconfigurable field-effect transistor (RFET)
KW - silicon nanowire (SiNW)
KW - work-function variation (WFV)
UR - https://www.scopus.com/pages/publications/85099590636
U2 - 10.1109/TED.2020.3045689
DO - 10.1109/TED.2020.3045689
M3 - 文章
AN - SCOPUS:85099590636
SN - 0018-9383
VL - 68
SP - 885
EP - 891
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 2
M1 - 9321221
ER -