Impact of oxygen vacancy on energy-level alignment at MoOx/organic interfaces

Zheng Zhang, Yan Xiao, Huai Xin Wei, Guo Fu Ma, Steffen Duhm, Yan Qing Li, Jian Xin Tang

Research output: Contribution to journalArticlepeer-review

40 Scopus citations

Abstract

Oxygen vacancies in MoOx play an essential role in interface energetics for charge injection and transport in organic devices. The influence of oxygen vacancy on energy-level alignment at the interface between MoOx and organic hole-transport layers is studied via photoemission spectroscopy. The degree of oxygen vacancies in MoOx is controlled by thermal annealing, which results in the partial reduction of Mo cations and a decrease in their work function. The hole-injection barrier at MoOx /organic interfaces increases as a consequence of the increase in oxygen deficiency.

Original languageEnglish
Article number095701
JournalApplied Physics Express
Volume6
Issue number9
DOIs
StatePublished - Sep 2013
Externally publishedYes

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