TY - GEN
T1 - Impact of Nanosheet Pitch, Ambient Temperature, and Thermal Contact Resistance on Electrothermal Characteristics of Vertical Gate-All-Around Nanosheet FETs
AU - Yang, Siqi
AU - Li, Xiaojin
AU - Sun, Yabin
AU - Shi, Yanling
N1 - Publisher Copyright:
© 2022 IEEE.
PY - 2022
Y1 - 2022
N2 - In this paper, the impact of thermal boundary conditions on self-heating effect (SHE) of vertical gate-all-around nanosheet FETs (VGAAFETs) is investigated using the calibrated TCAD. The hydrodynamic model, density gradient quantization model, thin-layer mobility model and etc. are adopted to accurately capture the electrothermal behaviors. The results show that electrothermal characteristics strongly affected by ambient temperature. Besides, thermal coupling among nanosheets is enhanced as the pitch of nanosheets becomes smaller. As the via density decreases, the chief heat removal exit has changed from drain to substrate for the nonadiabatic drain-top VGAAFET. Moreover, the drain-top configuration endures less SHE degeneration but presents smaller driving current than the source-top one.
AB - In this paper, the impact of thermal boundary conditions on self-heating effect (SHE) of vertical gate-all-around nanosheet FETs (VGAAFETs) is investigated using the calibrated TCAD. The hydrodynamic model, density gradient quantization model, thin-layer mobility model and etc. are adopted to accurately capture the electrothermal behaviors. The results show that electrothermal characteristics strongly affected by ambient temperature. Besides, thermal coupling among nanosheets is enhanced as the pitch of nanosheets becomes smaller. As the via density decreases, the chief heat removal exit has changed from drain to substrate for the nonadiabatic drain-top VGAAFET. Moreover, the drain-top configuration endures less SHE degeneration but presents smaller driving current than the source-top one.
UR - https://www.scopus.com/pages/publications/85143973642
U2 - 10.1109/ICSICT55466.2022.9963404
DO - 10.1109/ICSICT55466.2022.9963404
M3 - 会议稿件
AN - SCOPUS:85143973642
T3 - Proceedings of 2022 IEEE 16th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022
BT - Proceedings of 2022 IEEE 16th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022
A2 - Ye, Fan
A2 - Tang, Ting-Ao
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 16th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022
Y2 - 25 October 2022 through 28 October 2022
ER -