@inproceedings{e27717205b734a3ca48c347f0cb3af6a,
title = "Impact of channel and spacer engineering on DC and RF performance of Gate-all-around FET",
abstract = "In this paper, the insight to the impact of channel and spacer design on DC and RF performance of GAAFET is carried out. The channel design includes the optimization of effective channel lengths with overlap or underlap structure. Three kinds of spacer solutions are proposed and compared. Results show that this is a trade-off between RF performance and DC characteristics for any given design strategy. An appropriate overlap structure and dual-k spacer are found to provide superior RF performance, without obvious degradation in DC characteristics. The obtained results here are of great importance to guide the design of GAAFET into sub-10 nm technology node.",
author = "Zhen Zhou and Sun, \{Ya Bin\} and Li, \{Xiao Jin\} and Shi, \{Yan Ling\} and Chen, \{Shou Mian\} and Hu, \{Shao Jian\} and Ao Guo",
note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 ; Conference date: 31-10-2018 Through 03-11-2018",
year = "2018",
month = dec,
day = "5",
doi = "10.1109/ICSICT.2018.8565000",
language = "英语",
series = "2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
editor = "Ting-Ao Tang and Fan Ye and Yu-Long Jiang",
booktitle = "2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings",
address = "美国",
}