Impact of bias conditions on performance degradation in SiGe HBTs irradiated by 10 MeV Br ion

Yabin Sun; Jun Fu; Jun Xu; Yudong Wang; Wei Zhou; Wei Zhang; Jie Cui; Gaoqing Li; Zhihong Liu

doi:10.1016/j.microrel.2014.08.010

Impact of bias conditions on performance degradation in SiGe HBTs irradiated by 10 MeV Br ion

Yabin Sun, Jun Fu, Jun Xu, Yudong Wang, Wei Zhou, Wei Zhang, Jie Cui, Gaoqing Li, Zhihong Liu

Tsinghua University

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Effects of bias conditions on 10 MeV Br ion irradiation were investigated in NPN SiGe HBTs. Pre- and post-radiation direct current (DC) characteristics, such as current gain, leakage current, Early voltage and neutral base recombination, were studied and used to quantify the dose tolerance to 10 MeV Br ion. Experiment results for different bias conditions were compared and discussed in detail. It is found that performance degradations are indeed bias dependent. The BE junction reversed-biased mode suffers the largest degradation and the case with BE junction forward-biased shows the smallest degradation. The underlying physical mechanisms are analyzed and investigated in present work. The injection annealing effect of displacement damage is found to be responsible for the different irradiation response of SiGe HBTs under three bias conditions.

Original language	English
Pages (from-to)	2728-2734
Number of pages	7
Journal	Microelectronics Reliability
Volume	54
Issue number	12
DOIs	https://doi.org/10.1016/j.microrel.2014.08.010
State	Published - 1 Dec 2014
Externally published	Yes

Keywords

Bias dependence
Displacement damage
SiGe HBTs
Swift heavy ion

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10.1016/j.microrel.2014.08.010

Cite this

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title = "Impact of bias conditions on performance degradation in SiGe HBTs irradiated by 10 MeV Br ion",

abstract = "Effects of bias conditions on 10 MeV Br ion irradiation were investigated in NPN SiGe HBTs. Pre- and post-radiation direct current (DC) characteristics, such as current gain, leakage current, Early voltage and neutral base recombination, were studied and used to quantify the dose tolerance to 10 MeV Br ion. Experiment results for different bias conditions were compared and discussed in detail. It is found that performance degradations are indeed bias dependent. The BE junction reversed-biased mode suffers the largest degradation and the case with BE junction forward-biased shows the smallest degradation. The underlying physical mechanisms are analyzed and investigated in present work. The injection annealing effect of displacement damage is found to be responsible for the different irradiation response of SiGe HBTs under three bias conditions.",

keywords = "Bias dependence, Displacement damage, SiGe HBTs, Swift heavy ion",

author = "Yabin Sun and Jun Fu and Jun Xu and Yudong Wang and Wei Zhou and Wei Zhang and Jie Cui and Gaoqing Li and Zhihong Liu",

year = "2014",

month = dec,

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doi = "10.1016/j.microrel.2014.08.010",

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volume = "54",

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journal = "Microelectronics Reliability",

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TY - JOUR

T1 - Impact of bias conditions on performance degradation in SiGe HBTs irradiated by 10 MeV Br ion

AU - Sun, Yabin

AU - Fu, Jun

AU - Xu, Jun

AU - Wang, Yudong

AU - Zhou, Wei

AU - Zhang, Wei

AU - Cui, Jie

AU - Li, Gaoqing

AU - Liu, Zhihong

PY - 2014/12/1

Y1 - 2014/12/1

N2 - Effects of bias conditions on 10 MeV Br ion irradiation were investigated in NPN SiGe HBTs. Pre- and post-radiation direct current (DC) characteristics, such as current gain, leakage current, Early voltage and neutral base recombination, were studied and used to quantify the dose tolerance to 10 MeV Br ion. Experiment results for different bias conditions were compared and discussed in detail. It is found that performance degradations are indeed bias dependent. The BE junction reversed-biased mode suffers the largest degradation and the case with BE junction forward-biased shows the smallest degradation. The underlying physical mechanisms are analyzed and investigated in present work. The injection annealing effect of displacement damage is found to be responsible for the different irradiation response of SiGe HBTs under three bias conditions.

AB - Effects of bias conditions on 10 MeV Br ion irradiation were investigated in NPN SiGe HBTs. Pre- and post-radiation direct current (DC) characteristics, such as current gain, leakage current, Early voltage and neutral base recombination, were studied and used to quantify the dose tolerance to 10 MeV Br ion. Experiment results for different bias conditions were compared and discussed in detail. It is found that performance degradations are indeed bias dependent. The BE junction reversed-biased mode suffers the largest degradation and the case with BE junction forward-biased shows the smallest degradation. The underlying physical mechanisms are analyzed and investigated in present work. The injection annealing effect of displacement damage is found to be responsible for the different irradiation response of SiGe HBTs under three bias conditions.

KW - Bias dependence

KW - Displacement damage

KW - SiGe HBTs

KW - Swift heavy ion

UR - https://www.scopus.com/pages/publications/85028169480

U2 - 10.1016/j.microrel.2014.08.010

DO - 10.1016/j.microrel.2014.08.010

M3 - 文章

AN - SCOPUS:85028169480

SN - 0026-2714

VL - 54

SP - 2728

EP - 2734

JO - Microelectronics Reliability

JF - Microelectronics Reliability

IS - 12

ER -

Impact of bias conditions on performance degradation in SiGe HBTs irradiated by 10 MeV Br ion

Abstract

Keywords

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