Impact of Ambient Temperature on Electrothermal Characteristics of Gate-All-Around Nanosheet FETs

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Abstract

In this paper, the impact of ambient temperature on self-heating effects (SHEs) of 5nm gate-all-around nanosheet FETs (NS-GAAFETs) is investigated. The electrical characteristics of DC and AC, as well as the thermal characteristics of steady and transient state, are analyzed. Through numerical evaluations, it is shown that the ambient temperature strongly affects the electrothermal characteristics of NS-GAAFETs. With the ambient temperature increasing, the performances of NS-GAAFETs significantly deteriorate, where the on-off ratio ION/IOFF and sub-threshold swing SS decrease by 90.5% and 19.5% respectively.

Original languageEnglish
Title of host publicationInternational Conference Optoelectronic Information and Optical Engineering, OIOE 2024
EditorsYang Yue, Lu Leng
PublisherSPIE
ISBN (Electronic)9781510688193
DOIs
StatePublished - 2025
Event2024 International Conference Optoelectronic Information and Optical Engineering, OIOE 2024 - Wuhan, China
Duration: 18 Oct 202420 Oct 2024

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume13513
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

Conference2024 International Conference Optoelectronic Information and Optical Engineering, OIOE 2024
Country/TerritoryChina
CityWuhan
Period18/10/2420/10/24

Keywords

  • Electrothermal
  • GAA
  • Nanosheet
  • SHEs

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