III-nitride-based quantum dots and their optoelectronic applications

G. E. Weng; A. K. Ling; X. Q. Lv; J. Y. Zhang; B. P. Zhang

doi:10.3786/nml.v3i3.p200-207

III-nitride-based quantum dots and their optoelectronic applications

G. E. Weng, A. K. Ling, X. Q. Lv, J. Y. Zhang, B. P. Zhang

Xiamen University

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

During the last two decades, III-nitride-based quantum dots (QDs) have attracted great attentions for optoelectronic applications due to their unique electronic properties. In this paper, we first present an overview on the techniques of fabrication for III-nitride-based QDs. Then various optoelectronic devices such as QD lasers, QD light-emitting diodes (LEDs), QD infrared photodetectors (QDIPs) and QD intermediate band (QDIB) solar cells (SCs) are discussed. Finally, we focus on the future research directions and how the challenges can be overcome.

Original language	English
Pages (from-to)	200-207
Number of pages	8
Journal	Nano-Micro Letters
Volume	3
Issue number	3
DOIs	https://doi.org/10.3786/nml.v3i3.p200-207
State	Published - 2011
Externally published	Yes

Keywords

Iii-nitride-based quantum dots
Infrared photodetectors
Lasers
Light-emitting diods
Solar cells

Access to Document

10.3786/nml.v3i3.p200-207

Cite this

@article{940cbae6036b49d0986056c0387be851,

title = "III-nitride-based quantum dots and their optoelectronic applications",

abstract = "During the last two decades, III-nitride-based quantum dots (QDs) have attracted great attentions for optoelectronic applications due to their unique electronic properties. In this paper, we first present an overview on the techniques of fabrication for III-nitride-based QDs. Then various optoelectronic devices such as QD lasers, QD light-emitting diodes (LEDs), QD infrared photodetectors (QDIPs) and QD intermediate band (QDIB) solar cells (SCs) are discussed. Finally, we focus on the future research directions and how the challenges can be overcome.",

keywords = "Iii-nitride-based quantum dots, Infrared photodetectors, Lasers, Light-emitting diods, Solar cells",

author = "Weng, \{G. E.\} and Ling, \{A. K.\} and Lv, \{X. Q.\} and Zhang, \{J. Y.\} and Zhang, \{B. P.\}",

year = "2011",

doi = "10.3786/nml.v3i3.p200-207",

language = "英语",

volume = "3",

pages = "200--207",

journal = "Nano-Micro Letters",

issn = "2311-6706",

publisher = "Open Access Science Online",

number = "3",

}

TY - JOUR

T1 - III-nitride-based quantum dots and their optoelectronic applications

AU - Weng, G. E.

AU - Ling, A. K.

AU - Lv, X. Q.

AU - Zhang, J. Y.

AU - Zhang, B. P.

PY - 2011

Y1 - 2011

N2 - During the last two decades, III-nitride-based quantum dots (QDs) have attracted great attentions for optoelectronic applications due to their unique electronic properties. In this paper, we first present an overview on the techniques of fabrication for III-nitride-based QDs. Then various optoelectronic devices such as QD lasers, QD light-emitting diodes (LEDs), QD infrared photodetectors (QDIPs) and QD intermediate band (QDIB) solar cells (SCs) are discussed. Finally, we focus on the future research directions and how the challenges can be overcome.

AB - During the last two decades, III-nitride-based quantum dots (QDs) have attracted great attentions for optoelectronic applications due to their unique electronic properties. In this paper, we first present an overview on the techniques of fabrication for III-nitride-based QDs. Then various optoelectronic devices such as QD lasers, QD light-emitting diodes (LEDs), QD infrared photodetectors (QDIPs) and QD intermediate band (QDIB) solar cells (SCs) are discussed. Finally, we focus on the future research directions and how the challenges can be overcome.

KW - Iii-nitride-based quantum dots

KW - Infrared photodetectors

KW - Lasers

KW - Light-emitting diods

KW - Solar cells

UR - https://www.scopus.com/pages/publications/84861907987

U2 - 10.3786/nml.v3i3.p200-207

DO - 10.3786/nml.v3i3.p200-207

M3 - 文章

AN - SCOPUS:84861907987

SN - 2311-6706

VL - 3

SP - 200

EP - 207

JO - Nano-Micro Letters

JF - Nano-Micro Letters

IS - 3

ER -

III-nitride-based quantum dots and their optoelectronic applications

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this