Identification of Ferroelectricity in a Capacitor With Ultra-Thin (1.5-nm) Hf0.5Zr0.5O2 Film

Zhaomeng Gao; Yubo Luo; Shuxian Lyu; Yan Cheng; Yonghui Zheng; Qilan Zhong; Weifeng Zhang; Hangbing Lyu

doi:10.1109/LED.2021.3097332

Identification of Ferroelectricity in a Capacitor With Ultra-Thin (1.5-nm) Hf_0.5Zr_0.5O₂ Film

Zhaomeng Gao
, Yubo Luo
, Shuxian Lyu
, Yan Cheng
, Yonghui Zheng
, Qilan Zhong
, Weifeng Zhang^*
, Hangbing Lyu^*

^*Corresponding author for this work

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

38 Scopus citations

Abstract

The characterization of ferroelectricity in ultra-thin ferroelectric (FE) films is highly challenging due to enlarged leakage current and resistive switching (RS) effect. In this study, we investigated the polarization switching properties of 1.5-nm thick Hf_0.5Zr_0.5O₂ (HZO) films via direct hysteresis remnant polarization/voltage (P–V) loop measurement. To reduce the leakage current and eliminate the RS effect, positive-up–negative-down (PUND) measurement was implemented on back-to-back connected complementary cells. Rational hysteresis loops, with remnant polarization of approximately 2 µC/cm², were successfully obtained by directly measuring the polarization switching currents. In this study, we provide direct evidence of the stable ferroelectric property in 1.5-nm thick HZO films, and thereby show a potential prospect of ultimate scalability of HZO films.

Original language	English
Pages (from-to)	1303-1306
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	42
Issue number	9
DOIs	https://doi.org/10.1109/LED.2021.3097332
State	Published - 1 Sep 2021

Keywords

HfZr O
PUND measurement
hysteresis loop
ultra-thin ferroelectric

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10.1109/LED.2021.3097332

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title = "Identification of Ferroelectricity in a Capacitor With Ultra-Thin (1.5-nm) Hf0.5Zr0.5O2 Film",

abstract = "The characterization of ferroelectricity in ultra-thin ferroelectric (FE) films is highly challenging due to enlarged leakage current and resistive switching (RS) effect. In this study, we investigated the polarization switching properties of 1.5-nm thick Hf0.5Zr0.5O2 (HZO) films via direct hysteresis remnant polarization/voltage (P–V) loop measurement. To reduce the leakage current and eliminate the RS effect, positive-up–negative-down (PUND) measurement was implemented on back-to-back connected complementary cells. Rational hysteresis loops, with remnant polarization of approximately 2 µC/cm2, were successfully obtained by directly measuring the polarization switching currents. In this study, we provide direct evidence of the stable ferroelectric property in 1.5-nm thick HZO films, and thereby show a potential prospect of ultimate scalability of HZO films.",

keywords = "HfZr O, PUND measurement, hysteresis loop, ultra-thin ferroelectric",

author = "Zhaomeng Gao and Yubo Luo and Shuxian Lyu and Yan Cheng and Yonghui Zheng and Qilan Zhong and Weifeng Zhang and Hangbing Lyu",

note = "Publisher Copyright: {\textcopyright} 2021 IEEE.",

year = "2021",

month = sep,

day = "1",

doi = "10.1109/LED.2021.3097332",

language = "英语",

volume = "42",

pages = "1303--1306",

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T1 - Identification of Ferroelectricity in a Capacitor With Ultra-Thin (1.5-nm) Hf0.5Zr0.5O2 Film

AU - Gao, Zhaomeng

AU - Luo, Yubo

AU - Lyu, Shuxian

AU - Cheng, Yan

AU - Zheng, Yonghui

AU - Zhong, Qilan

AU - Zhang, Weifeng

AU - Lyu, Hangbing

PY - 2021/9/1

Y1 - 2021/9/1

N2 - The characterization of ferroelectricity in ultra-thin ferroelectric (FE) films is highly challenging due to enlarged leakage current and resistive switching (RS) effect. In this study, we investigated the polarization switching properties of 1.5-nm thick Hf0.5Zr0.5O2 (HZO) films via direct hysteresis remnant polarization/voltage (P–V) loop measurement. To reduce the leakage current and eliminate the RS effect, positive-up–negative-down (PUND) measurement was implemented on back-to-back connected complementary cells. Rational hysteresis loops, with remnant polarization of approximately 2 µC/cm2, were successfully obtained by directly measuring the polarization switching currents. In this study, we provide direct evidence of the stable ferroelectric property in 1.5-nm thick HZO films, and thereby show a potential prospect of ultimate scalability of HZO films.

AB - The characterization of ferroelectricity in ultra-thin ferroelectric (FE) films is highly challenging due to enlarged leakage current and resistive switching (RS) effect. In this study, we investigated the polarization switching properties of 1.5-nm thick Hf0.5Zr0.5O2 (HZO) films via direct hysteresis remnant polarization/voltage (P–V) loop measurement. To reduce the leakage current and eliminate the RS effect, positive-up–negative-down (PUND) measurement was implemented on back-to-back connected complementary cells. Rational hysteresis loops, with remnant polarization of approximately 2 µC/cm2, were successfully obtained by directly measuring the polarization switching currents. In this study, we provide direct evidence of the stable ferroelectric property in 1.5-nm thick HZO films, and thereby show a potential prospect of ultimate scalability of HZO films.

KW - HfZr O

KW - PUND measurement

KW - hysteresis loop

KW - ultra-thin ferroelectric

UR - https://www.scopus.com/pages/publications/85110880150

U2 - 10.1109/LED.2021.3097332

DO - 10.1109/LED.2021.3097332

M3 - 文章

AN - SCOPUS:85110880150

SN - 0741-3106

VL - 42

SP - 1303

EP - 1306

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 9

ER -

Identification of Ferroelectricity in a Capacitor With Ultra-Thin (1.5-nm) Hf_0.5Zr_0.5O₂ Film

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Keywords

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