Hydrogen-enhanced recrystallization in N+-implanted GaAs

J. Wang; Z. Li; W. Xu; X. Guo; W. Cai; Q. Wang; X. Chen; W. Lu

doi:10.1007/s00339-003-2173-x

Hydrogen-enhanced recrystallization in N⁺-implanted GaAs

J. Wang, Z. Li, W. Xu, X. Guo, W. Cai, Q. Wang, X. Chen, W. Lu

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The hydrogen-enhanced recrystallization during thermal annealing in N ⁺-implanted GaAs has been studied by combinatorial implantation process. Raman spectroscopy was used to study the crystallization properties of a set of hydrogenated cells on the N⁺-implanted GaAs wafer. A whole competitive process between H⁺ implantation-induced damage and recovery in the regrowth process of amorphous GaAs was observed within the proton dose region of 1.6 × 10¹⁵ to 1.1 × 10¹⁷ cm^-2. In H⁺ dose region of 2.1 × 10¹⁶ to 5.4 × 10¹⁶ cm^-2, H-enhanced recovery of crystal dominates the regrowth process. The crystal quality is better than that of unhydrogenated cell of N⁺-implanted GaAs in the H⁺ dose range from 4.7 × 10¹⁶ to 8.1 × 10¹⁶ cm ^-2. It is suggested that the vacancy supersaturation produced during hydrogen irradiation is dominantly responsible for the enhancement of thermal regrowth in the N⁺-implanted GaAs. Both the crystallization and amorphization process are clearly observed in different proton implantation dose regions.

Original language	English
Pages (from-to)	1809-1811
Number of pages	3
Journal	Applied Physics A: Materials Science and Processing
Volume	79
Issue number	7
DOIs	https://doi.org/10.1007/s00339-003-2173-x
State	Published - Nov 2004
Externally published	Yes

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title = "Hydrogen-enhanced recrystallization in N+-implanted GaAs",

abstract = "The hydrogen-enhanced recrystallization during thermal annealing in N +-implanted GaAs has been studied by combinatorial implantation process. Raman spectroscopy was used to study the crystallization properties of a set of hydrogenated cells on the N+-implanted GaAs wafer. A whole competitive process between H+ implantation-induced damage and recovery in the regrowth process of amorphous GaAs was observed within the proton dose region of 1.6 × 1015 to 1.1 × 1017 cm-2. In H+ dose region of 2.1 × 1016 to 5.4 × 1016 cm-2, H-enhanced recovery of crystal dominates the regrowth process. The crystal quality is better than that of unhydrogenated cell of N+-implanted GaAs in the H+ dose range from 4.7 × 1016 to 8.1 × 1016 cm -2. It is suggested that the vacancy supersaturation produced during hydrogen irradiation is dominantly responsible for the enhancement of thermal regrowth in the N+-implanted GaAs. Both the crystallization and amorphization process are clearly observed in different proton implantation dose regions.",

author = "J. Wang and Z. Li and W. Xu and X. Guo and W. Cai and Q. Wang and X. Chen and W. Lu",

year = "2004",

month = nov,

doi = "10.1007/s00339-003-2173-x",

language = "英语",

volume = "79",

pages = "1809--1811",

journal = "Applied Physics A: Materials Science and Processing",

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T1 - Hydrogen-enhanced recrystallization in N+-implanted GaAs

AU - Wang, J.

AU - Li, Z.

AU - Xu, W.

AU - Guo, X.

AU - Cai, W.

AU - Wang, Q.

AU - Chen, X.

AU - Lu, W.

PY - 2004/11

Y1 - 2004/11

N2 - The hydrogen-enhanced recrystallization during thermal annealing in N +-implanted GaAs has been studied by combinatorial implantation process. Raman spectroscopy was used to study the crystallization properties of a set of hydrogenated cells on the N+-implanted GaAs wafer. A whole competitive process between H+ implantation-induced damage and recovery in the regrowth process of amorphous GaAs was observed within the proton dose region of 1.6 × 1015 to 1.1 × 1017 cm-2. In H+ dose region of 2.1 × 1016 to 5.4 × 1016 cm-2, H-enhanced recovery of crystal dominates the regrowth process. The crystal quality is better than that of unhydrogenated cell of N+-implanted GaAs in the H+ dose range from 4.7 × 1016 to 8.1 × 1016 cm -2. It is suggested that the vacancy supersaturation produced during hydrogen irradiation is dominantly responsible for the enhancement of thermal regrowth in the N+-implanted GaAs. Both the crystallization and amorphization process are clearly observed in different proton implantation dose regions.

AB - The hydrogen-enhanced recrystallization during thermal annealing in N +-implanted GaAs has been studied by combinatorial implantation process. Raman spectroscopy was used to study the crystallization properties of a set of hydrogenated cells on the N+-implanted GaAs wafer. A whole competitive process between H+ implantation-induced damage and recovery in the regrowth process of amorphous GaAs was observed within the proton dose region of 1.6 × 1015 to 1.1 × 1017 cm-2. In H+ dose region of 2.1 × 1016 to 5.4 × 1016 cm-2, H-enhanced recovery of crystal dominates the regrowth process. The crystal quality is better than that of unhydrogenated cell of N+-implanted GaAs in the H+ dose range from 4.7 × 1016 to 8.1 × 1016 cm -2. It is suggested that the vacancy supersaturation produced during hydrogen irradiation is dominantly responsible for the enhancement of thermal regrowth in the N+-implanted GaAs. Both the crystallization and amorphization process are clearly observed in different proton implantation dose regions.

UR - https://www.scopus.com/pages/publications/5444227142

U2 - 10.1007/s00339-003-2173-x

DO - 10.1007/s00339-003-2173-x

M3 - 文章

AN - SCOPUS:5444227142

SN - 0947-8396

VL - 79

SP - 1809

EP - 1811

JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

IS - 7

ER -

Hydrogen-enhanced recrystallization in N⁺-implanted GaAs

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