Hybrid intermediate connector for tandem OLEDs with the combination of MoO₃-based interlayer and p-type doping

We report on a high-quality hybrid intermediate connector (IC) used in tandem organic light-emitting diodes (OLEDs), which is composed of an ultrathin MoO₃ interlayer sandwiched between a n-type Cs₂CO ₃-doped 4,7-diphenyl-1,10-phenanthroline (BPhen) layer and a p-type MoO₃-doped N,N′-diphenyl-N,N′-bis(1-naphthyl)-(1, 1′-biphenyl)-4,4′-diamine (NPB) layer. The charge generation characteristics for light emission in tandem OLEDs have been identified by studying the interfaces and the corresponding devices. The hybrid IC structure exhibits superior charge generation capability, and its interfacial electronic structures are beneficial to the generation and injection of electrons and holes into bottom and top emission units, respectively. Compared to the organic-TMO bilayer and doped p-n junction structures, the hybrid IC structure combining MoO₃-based interlayer and p-type doping can effectively decrease the driving voltage and improve the current efficiency of tandem devices due to the increased bulk heterojunction-like charge generation interfaces. Our results indicate that the TMO-based hybrid IC structure can be a good structure in the fabrication of high-efficiency tandem OLEDs.