Hybrid 1T e-DRAM and e-NVM Realized in One 10 nm node Ferro FinFET device with Charge Trapping and Domain Switching Effects

Qing Luo; Tiancheng Gong; Yan Cheng; Qingzhu Zhang; Haoran Yu; Jie Yu; Haili Ma; Xiaoxin Xu; Kailiang Huang; Xi Zhu; Danian Dona; Jiahao Yin; Peng Yuan; Lu Tai; Jianfeng Gao; Junfeng Li; Huaxiang Yin; Shibing Long; Qi Liu; Hangbing Lv; Ming Liu

doi:10.1109/IEDM.2018.8614650

Hybrid 1T e-DRAM and e-NVM Realized in One 10 nm node Ferro FinFET device with Charge Trapping and Domain Switching Effects

Qing Luo, Tiancheng Gong, Yan Cheng, Qingzhu Zhang, Haoran Yu, Jie Yu, Haili Ma, Xiaoxin Xu, Kailiang Huang, Xi Zhu, Danian Dona, Jiahao Yin, Peng Yuan, Lu Tai, Jianfeng Gao, Junfeng Li, Huaxiang Yin, Shibing Long, Qi Liu, Hangbing LvMing Liu

School of Physics and Electronic Science

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

42 Scopus citations

Abstract

For the first time, we experimentally demonstrated a 10nm node HfZrO based FE-FinFET device with both Charge Trapping and Domain Switching memory effect. Extreme high endurance (> 10¹²), high operation speed (<20ns), good data retention (10⁴@85C), low operation voltage (<3V) were identified in charge trapping mode, which is quite promising for e-DRAM application. As the device working in domain switching mode, even more robust retention (> 10 years) and read disturbance immunity were achieved, showing great potential for e-NVM application.

Original language	English
Title of host publication	2018 IEEE International Electron Devices Meeting, IEDM 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	2.6.1-2.6.4
ISBN (Electronic)	9781728119878
DOIs	https://doi.org/10.1109/IEDM.2018.8614650
State	Published - 2 Jul 2018
Event	64th Annual IEEE International Electron Devices Meeting, IEDM 2018 - San Francisco, United States Duration: 1 Dec 2018 → 5 Dec 2018

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	2018-December
ISSN (Print)	0163-1918

Conference

Conference	64th Annual IEEE International Electron Devices Meeting, IEDM 2018
Country/Territory	United States
City	San Francisco
Period	1/12/18 → 5/12/18

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10.1109/IEDM.2018.8614650

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Luo, Q., Gong, T., Cheng, Y., Zhang, Q., Yu, H., Yu, J., Ma, H., Xu, X., Huang, K., Zhu, X., Dona, D., Yin, J., Yuan, P., Tai, L., Gao, J., Li, J., Yin, H., Long, S., Liu, Q., ... Liu, M. (2018). Hybrid 1T e-DRAM and e-NVM Realized in One 10 nm node Ferro FinFET device with Charge Trapping and Domain Switching Effects. In 2018 IEEE International Electron Devices Meeting, IEDM 2018 (pp. 2.6.1-2.6.4). Article 8614650 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2018-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2018.8614650

Luo, Qing ; Gong, Tiancheng ; Cheng, Yan et al. / Hybrid 1T e-DRAM and e-NVM Realized in One 10 nm node Ferro FinFET device with Charge Trapping and Domain Switching Effects. 2018 IEEE International Electron Devices Meeting, IEDM 2018. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 2.6.1-2.6.4 (Technical Digest - International Electron Devices Meeting, IEDM).

@inproceedings{2b17a9a4966a4e7ebfd2baeae26d194b,

title = "Hybrid 1T e-DRAM and e-NVM Realized in One 10 nm node Ferro FinFET device with Charge Trapping and Domain Switching Effects",

abstract = "For the first time, we experimentally demonstrated a 10nm node HfZrO based FE-FinFET device with both Charge Trapping and Domain Switching memory effect. Extreme high endurance (> 1012), high operation speed (<20ns), good data retention (104@85C), low operation voltage (<3V) were identified in charge trapping mode, which is quite promising for e-DRAM application. As the device working in domain switching mode, even more robust retention (> 10 years) and read disturbance immunity were achieved, showing great potential for e-NVM application.",

author = "Qing Luo and Tiancheng Gong and Yan Cheng and Qingzhu Zhang and Haoran Yu and Jie Yu and Haili Ma and Xiaoxin Xu and Kailiang Huang and Xi Zhu and Danian Dona and Jiahao Yin and Peng Yuan and Lu Tai and Jianfeng Gao and Junfeng Li and Huaxiang Yin and Shibing Long and Qi Liu and Hangbing Lv and Ming Liu",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 64th Annual IEEE International Electron Devices Meeting, IEDM 2018 ; Conference date: 01-12-2018 Through 05-12-2018",

year = "2018",

month = jul,

day = "2",

doi = "10.1109/IEDM.2018.8614650",

language = "英语",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "2.6.1--2.6.4",

booktitle = "2018 IEEE International Electron Devices Meeting, IEDM 2018",

address = "美国",

}

Luo, Q, Gong, T, Cheng, Y, Zhang, Q, Yu, H, Yu, J, Ma, H, Xu, X, Huang, K, Zhu, X, Dona, D, Yin, J, Yuan, P, Tai, L, Gao, J, Li, J, Yin, H, Long, S, Liu, Q, Lv, H & Liu, M 2018, Hybrid 1T e-DRAM and e-NVM Realized in One 10 nm node Ferro FinFET device with Charge Trapping and Domain Switching Effects. in 2018 IEEE International Electron Devices Meeting, IEDM 2018., 8614650, Technical Digest - International Electron Devices Meeting, IEDM, vol. 2018-December, Institute of Electrical and Electronics Engineers Inc., pp. 2.6.1-2.6.4, 64th Annual IEEE International Electron Devices Meeting, IEDM 2018, San Francisco, United States, 1/12/18. https://doi.org/10.1109/IEDM.2018.8614650

Hybrid 1T e-DRAM and e-NVM Realized in One 10 nm node Ferro FinFET device with Charge Trapping and Domain Switching Effects. / Luo, Qing; Gong, Tiancheng; Cheng, Yan et al.
2018 IEEE International Electron Devices Meeting, IEDM 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 2.6.1-2.6.4 8614650 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2018-December).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Hybrid 1T e-DRAM and e-NVM Realized in One 10 nm node Ferro FinFET device with Charge Trapping and Domain Switching Effects

AU - Luo, Qing

AU - Gong, Tiancheng

AU - Cheng, Yan

AU - Zhang, Qingzhu

AU - Yu, Haoran

AU - Yu, Jie

AU - Ma, Haili

AU - Xu, Xiaoxin

AU - Huang, Kailiang

AU - Zhu, Xi

AU - Dona, Danian

AU - Yin, Jiahao

AU - Yuan, Peng

AU - Tai, Lu

AU - Gao, Jianfeng

AU - Li, Junfeng

AU - Yin, Huaxiang

AU - Long, Shibing

AU - Liu, Qi

AU - Lv, Hangbing

AU - Liu, Ming

PY - 2018/7/2

Y1 - 2018/7/2

N2 - For the first time, we experimentally demonstrated a 10nm node HfZrO based FE-FinFET device with both Charge Trapping and Domain Switching memory effect. Extreme high endurance (> 1012), high operation speed (<20ns), good data retention (104@85C), low operation voltage (<3V) were identified in charge trapping mode, which is quite promising for e-DRAM application. As the device working in domain switching mode, even more robust retention (> 10 years) and read disturbance immunity were achieved, showing great potential for e-NVM application.

AB - For the first time, we experimentally demonstrated a 10nm node HfZrO based FE-FinFET device with both Charge Trapping and Domain Switching memory effect. Extreme high endurance (> 1012), high operation speed (<20ns), good data retention (104@85C), low operation voltage (<3V) were identified in charge trapping mode, which is quite promising for e-DRAM application. As the device working in domain switching mode, even more robust retention (> 10 years) and read disturbance immunity were achieved, showing great potential for e-NVM application.

UR - https://www.scopus.com/pages/publications/85061820514

U2 - 10.1109/IEDM.2018.8614650

DO - 10.1109/IEDM.2018.8614650

M3 - 会议稿件

AN - SCOPUS:85061820514

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 2.6.1-2.6.4

BT - 2018 IEEE International Electron Devices Meeting, IEDM 2018

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 64th Annual IEEE International Electron Devices Meeting, IEDM 2018

Y2 - 1 December 2018 through 5 December 2018

ER -

Luo Q, Gong T, Cheng Y, Zhang Q, Yu H, Yu J et al. Hybrid 1T e-DRAM and e-NVM Realized in One 10 nm node Ferro FinFET device with Charge Trapping and Domain Switching Effects. In 2018 IEEE International Electron Devices Meeting, IEDM 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. 2.6.1-2.6.4. 8614650. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM.2018.8614650

Hybrid 1T e-DRAM and e-NVM Realized in One 10 nm node Ferro FinFET device with Charge Trapping and Domain Switching Effects

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