TY - JOUR
T1 - Hot-Carrier Extraction Prevailing over Multiple-Exciton Generation in Two-Dimensional Semiconductor Heterostructures
AU - Yao, Lianfei
AU - Lu, Feifei
AU - Ruan, Luoyuan
AU - Deng, Huiyong
AU - Lou, Xue
N1 - Publisher Copyright:
© 2025 American Chemical Society.
PY - 2025/2/27
Y1 - 2025/2/27
N2 - Multiple-exciton generation (MEG) represents an effective strategy to break the Shockley-Queisser (SQ) limit, thereby enhancing the efficiency of photon-to-electron conversion. Here, we investigate MEG in monolayer MoTe2, with an energy threshold of 2.22 eV (∼2.02Eg) and a MEG conversion efficiency of 90%. We discuss the potential origins of efficient MEG in MoTe2/WSe2 type I heterostructures, with a particular focus on the competition between MEG and hot-carrier extraction. We conclude that impact ionization is likely responsible for exciton multiplication. Our results suggest that monolayer MoTe2 has significant potential for efficient light harvesting and hot-carrier devices.
AB - Multiple-exciton generation (MEG) represents an effective strategy to break the Shockley-Queisser (SQ) limit, thereby enhancing the efficiency of photon-to-electron conversion. Here, we investigate MEG in monolayer MoTe2, with an energy threshold of 2.22 eV (∼2.02Eg) and a MEG conversion efficiency of 90%. We discuss the potential origins of efficient MEG in MoTe2/WSe2 type I heterostructures, with a particular focus on the competition between MEG and hot-carrier extraction. We conclude that impact ionization is likely responsible for exciton multiplication. Our results suggest that monolayer MoTe2 has significant potential for efficient light harvesting and hot-carrier devices.
UR - https://www.scopus.com/pages/publications/85217930999
U2 - 10.1021/acs.jpclett.4c02784
DO - 10.1021/acs.jpclett.4c02784
M3 - 文章
C2 - 39959985
AN - SCOPUS:85217930999
SN - 1948-7185
VL - 16
SP - 1887
EP - 1893
JO - Journal of Physical Chemistry Letters
JF - Journal of Physical Chemistry Letters
IS - 8
ER -