Hopping conduction and low-frequency dielectric relaxation in 5 mol % Mn doped (Pb,Sr) TiO3 films

J. Yang; X. J. Meng; M. R. Shen; L. Fang; J. L. Wang; T. Lin; J. L. Sun; J. H. Chu

doi:10.1063/1.3021447

Hopping conduction and low-frequency dielectric relaxation in 5 mol % Mn doped (Pb,Sr) TiO3 films

J. Yang, X. J. Meng, M. R. Shen, L. Fang, J. L. Wang, T. Lin, J. L. Sun, J. H. Chu

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54 Scopus citations

Abstract

The highly (00l) -oriented 5 mol % Mn doped Pb0.5 Sr0.5 TiO3 films with remarkable ferroelectric properties (2 Pr =27.1 μC/ cm2 and 2 Ec =55.5 kV/cm) were fabricated on LaNiO3 coated silicon substrates by chemical solution deposition. The ac conductivity and the dielectric response of the films at various temperatures were studied. Hopping conduction accompanied by the dielectric relaxation at low frequencies was observed. The results can be correlated with the thermal-activated short range hopping of localized charge carriers through trap sites separated by potential barriers with different heights, i.e., localized electrons hopping between multivalence Mn sites (the activation energy of this hopping process is ∼0.4 eV), which is also established in terms of the correlated barrier hopping model.

Original language	English
Article number	104113
Journal	Journal of Applied Physics
Volume	104
Issue number	10
DOIs	https://doi.org/10.1063/1.3021447
State	Published - 2008
Externally published	Yes

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title = "Hopping conduction and low-frequency dielectric relaxation in 5 mol \% Mn doped (Pb,Sr) TiO3 films",

abstract = "The highly (00l) -oriented 5 mol \% Mn doped Pb0.5 Sr0.5 TiO3 films with remarkable ferroelectric properties (2 Pr =27.1 μC/ cm2 and 2 Ec =55.5 kV/cm) were fabricated on LaNiO3 coated silicon substrates by chemical solution deposition. The ac conductivity and the dielectric response of the films at various temperatures were studied. Hopping conduction accompanied by the dielectric relaxation at low frequencies was observed. The results can be correlated with the thermal-activated short range hopping of localized charge carriers through trap sites separated by potential barriers with different heights, i.e., localized electrons hopping between multivalence Mn sites (the activation energy of this hopping process is ∼0.4 eV), which is also established in terms of the correlated barrier hopping model.",

author = "J. Yang and Meng, \{X. J.\} and Shen, \{M. R.\} and L. Fang and Wang, \{J. L.\} and T. Lin and Sun, \{J. L.\} and Chu, \{J. H.\}",

year = "2008",

doi = "10.1063/1.3021447",

language = "英语",

volume = "104",

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publisher = "American Institute of Physics",

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TY - JOUR

T1 - Hopping conduction and low-frequency dielectric relaxation in 5 mol % Mn doped (Pb,Sr) TiO3 films

AU - Yang, J.

AU - Meng, X. J.

AU - Shen, M. R.

AU - Fang, L.

AU - Wang, J. L.

AU - Lin, T.

AU - Sun, J. L.

AU - Chu, J. H.

PY - 2008

Y1 - 2008

N2 - The highly (00l) -oriented 5 mol % Mn doped Pb0.5 Sr0.5 TiO3 films with remarkable ferroelectric properties (2 Pr =27.1 μC/ cm2 and 2 Ec =55.5 kV/cm) were fabricated on LaNiO3 coated silicon substrates by chemical solution deposition. The ac conductivity and the dielectric response of the films at various temperatures were studied. Hopping conduction accompanied by the dielectric relaxation at low frequencies was observed. The results can be correlated with the thermal-activated short range hopping of localized charge carriers through trap sites separated by potential barriers with different heights, i.e., localized electrons hopping between multivalence Mn sites (the activation energy of this hopping process is ∼0.4 eV), which is also established in terms of the correlated barrier hopping model.

AB - The highly (00l) -oriented 5 mol % Mn doped Pb0.5 Sr0.5 TiO3 films with remarkable ferroelectric properties (2 Pr =27.1 μC/ cm2 and 2 Ec =55.5 kV/cm) were fabricated on LaNiO3 coated silicon substrates by chemical solution deposition. The ac conductivity and the dielectric response of the films at various temperatures were studied. Hopping conduction accompanied by the dielectric relaxation at low frequencies was observed. The results can be correlated with the thermal-activated short range hopping of localized charge carriers through trap sites separated by potential barriers with different heights, i.e., localized electrons hopping between multivalence Mn sites (the activation energy of this hopping process is ∼0.4 eV), which is also established in terms of the correlated barrier hopping model.

UR - https://www.scopus.com/pages/publications/57049174499

U2 - 10.1063/1.3021447

DO - 10.1063/1.3021447

M3 - 文章

AN - SCOPUS:57049174499

SN - 0021-8979

VL - 104

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 10

M1 - 104113

ER -

Hopping conduction and low-frequency dielectric relaxation in 5 mol % Mn doped (Pb,Sr) TiO3 films

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