Highly sensitive phototransistor based on GaSe nanosheets

Hai Huang; Peng Wang; Yanqing Gao; Xudong Wang; Tie Lin; Jianlu Wang; Lei Liao; Jinglan Sun; Xiangjian Meng; Zhiming Huang; Xiaoshuang Chen; Junhao Chu

doi:10.1063/1.4933034

Highly sensitive phototransistor based on GaSe nanosheets

Hai Huang
, Peng Wang
, Yanqing Gao
, Xudong Wang
, Tie Lin^*
, Jianlu Wang
, Lei Liao
, Jinglan Sun
, Xiangjian Meng
, Zhiming Huang
, Xiaoshuang Chen
, Junhao Chu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

77 Scopus citations

Abstract

Phototransistors based on two dimensional semiconductors have drawn increasing attention in recent years. GaSe is a typical semiconductor with a layered structure. In this work, the ultrathin GaSe nanosheets were exfoliated from commercially available crystals using a micromechanical cleavage technique. Then, the nanosheets were used to fabricate field effect transistors (FETs) on Si/SiO₂ substrates with interdigitated electrodes. The electrical and optoelectronic properties of the FET were characterized. The phototransistor based on a GaSe nanosheet had a high photoresponsivity (∼2200 mA/W) and a high I_photo/I_dark (photoresponse current over dark current) ratio of almost 10³.

Original language	English
Article number	143112
Journal	Applied Physics Letters
Volume	107
Issue number	14
DOIs	https://doi.org/10.1063/1.4933034
State	Published - 5 Oct 2015
Externally published	Yes

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title = "Highly sensitive phototransistor based on GaSe nanosheets",

abstract = "Phototransistors based on two dimensional semiconductors have drawn increasing attention in recent years. GaSe is a typical semiconductor with a layered structure. In this work, the ultrathin GaSe nanosheets were exfoliated from commercially available crystals using a micromechanical cleavage technique. Then, the nanosheets were used to fabricate field effect transistors (FETs) on Si/SiO2 substrates with interdigitated electrodes. The electrical and optoelectronic properties of the FET were characterized. The phototransistor based on a GaSe nanosheet had a high photoresponsivity (∼2200 mA/W) and a high Iphoto/Idark (photoresponse current over dark current) ratio of almost 103.",

author = "Hai Huang and Peng Wang and Yanqing Gao and Xudong Wang and Tie Lin and Jianlu Wang and Lei Liao and Jinglan Sun and Xiangjian Meng and Zhiming Huang and Xiaoshuang Chen and Junhao Chu",

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T1 - Highly sensitive phototransistor based on GaSe nanosheets

AU - Huang, Hai

AU - Wang, Peng

AU - Gao, Yanqing

AU - Wang, Xudong

AU - Lin, Tie

AU - Wang, Jianlu

AU - Liao, Lei

AU - Sun, Jinglan

AU - Meng, Xiangjian

AU - Huang, Zhiming

AU - Chen, Xiaoshuang

AU - Chu, Junhao

PY - 2015/10/5

Y1 - 2015/10/5

N2 - Phototransistors based on two dimensional semiconductors have drawn increasing attention in recent years. GaSe is a typical semiconductor with a layered structure. In this work, the ultrathin GaSe nanosheets were exfoliated from commercially available crystals using a micromechanical cleavage technique. Then, the nanosheets were used to fabricate field effect transistors (FETs) on Si/SiO2 substrates with interdigitated electrodes. The electrical and optoelectronic properties of the FET were characterized. The phototransistor based on a GaSe nanosheet had a high photoresponsivity (∼2200 mA/W) and a high Iphoto/Idark (photoresponse current over dark current) ratio of almost 103.

AB - Phototransistors based on two dimensional semiconductors have drawn increasing attention in recent years. GaSe is a typical semiconductor with a layered structure. In this work, the ultrathin GaSe nanosheets were exfoliated from commercially available crystals using a micromechanical cleavage technique. Then, the nanosheets were used to fabricate field effect transistors (FETs) on Si/SiO2 substrates with interdigitated electrodes. The electrical and optoelectronic properties of the FET were characterized. The phototransistor based on a GaSe nanosheet had a high photoresponsivity (∼2200 mA/W) and a high Iphoto/Idark (photoresponse current over dark current) ratio of almost 103.

UR - https://www.scopus.com/pages/publications/84943792955

U2 - 10.1063/1.4933034

DO - 10.1063/1.4933034

M3 - 文章

AN - SCOPUS:84943792955

SN - 0003-6951

VL - 107

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

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ER -

Highly sensitive phototransistor based on GaSe nanosheets

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