Highly efficient quantum-dot light emitting diodes with sol-gel ZnO electron contact

Yue Qi Liu; Dan Dan Zhang; Huai Xin Wei; Qing Dong Ou; Yan Qing Li; Jian Xin Tang

doi:10.1364/OME.7.002161

Highly efficient quantum-dot light emitting diodes with sol-gel ZnO electron contact

Yue Qi Liu
, Dan Dan Zhang^*
, Huai Xin Wei
, Qing Dong Ou
, Yan Qing Li
, Jian Xin Tang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

We demonstrated an efficient inverted CdSe/CdS/ZnS quantum dot light emitting diode (QLED) using sol-gel ZnO (s-ZnO) as the electron-injection layer (EIL). The device performance is comparable to that of a device based on the common used nanoparticle ZnO (n-ZnO) EIL. The peak efficiency (12.5 cd/A) and luminance (13000 cd/m²) for the s-ZnO based device was found to be similar to the n-ZnO based device (11.2 cd/A and 15000 cd/m²). The morphology properties of these two types of ZnO films were investigated by scanning electron microscope (SEM) and atomic force microscope (AFM) measurements. A very smooth surface was achieved for the s-ZnO film. Moreover, the quantum dot (QD) layer on the s-ZnO also possesses high quality with a close packed structure.

Original language	English
Pages (from-to)	2161-2167
Number of pages	7
Journal	Optical Materials Express
Volume	7
Issue number	7
DOIs	https://doi.org/10.1364/OME.7.002161
State	Published - 1 Jun 2017
Externally published	Yes

Access to Document

10.1364/OME.7.002161

Cite this

@article{956784d3681f4781a06836c6371ed64f,

title = "Highly efficient quantum-dot light emitting diodes with sol-gel ZnO electron contact",

abstract = "We demonstrated an efficient inverted CdSe/CdS/ZnS quantum dot light emitting diode (QLED) using sol-gel ZnO (s-ZnO) as the electron-injection layer (EIL). The device performance is comparable to that of a device based on the common used nanoparticle ZnO (n-ZnO) EIL. The peak efficiency (12.5 cd/A) and luminance (13000 cd/m2) for the s-ZnO based device was found to be similar to the n-ZnO based device (11.2 cd/A and 15000 cd/m2). The morphology properties of these two types of ZnO films were investigated by scanning electron microscope (SEM) and atomic force microscope (AFM) measurements. A very smooth surface was achieved for the s-ZnO film. Moreover, the quantum dot (QD) layer on the s-ZnO also possesses high quality with a close packed structure.",

author = "Liu, \{Yue Qi\} and Zhang, \{Dan Dan\} and Wei, \{Huai Xin\} and Ou, \{Qing Dong\} and Li, \{Yan Qing\} and Tang, \{Jian Xin\}",

note = "Publisher Copyright: {\textcopyright} 2017 Optical Society of America.",

year = "2017",

month = jun,

day = "1",

doi = "10.1364/OME.7.002161",

language = "英语",

volume = "7",

pages = "2161--2167",

journal = "Optical Materials Express",

issn = "2159-3930",

publisher = "Optica Publishing Group (formerly OSA)",

number = "7",

}

TY - JOUR

T1 - Highly efficient quantum-dot light emitting diodes with sol-gel ZnO electron contact

AU - Liu, Yue Qi

AU - Zhang, Dan Dan

AU - Wei, Huai Xin

AU - Ou, Qing Dong

AU - Li, Yan Qing

AU - Tang, Jian Xin

PY - 2017/6/1

Y1 - 2017/6/1

N2 - We demonstrated an efficient inverted CdSe/CdS/ZnS quantum dot light emitting diode (QLED) using sol-gel ZnO (s-ZnO) as the electron-injection layer (EIL). The device performance is comparable to that of a device based on the common used nanoparticle ZnO (n-ZnO) EIL. The peak efficiency (12.5 cd/A) and luminance (13000 cd/m2) for the s-ZnO based device was found to be similar to the n-ZnO based device (11.2 cd/A and 15000 cd/m2). The morphology properties of these two types of ZnO films were investigated by scanning electron microscope (SEM) and atomic force microscope (AFM) measurements. A very smooth surface was achieved for the s-ZnO film. Moreover, the quantum dot (QD) layer on the s-ZnO also possesses high quality with a close packed structure.

AB - We demonstrated an efficient inverted CdSe/CdS/ZnS quantum dot light emitting diode (QLED) using sol-gel ZnO (s-ZnO) as the electron-injection layer (EIL). The device performance is comparable to that of a device based on the common used nanoparticle ZnO (n-ZnO) EIL. The peak efficiency (12.5 cd/A) and luminance (13000 cd/m2) for the s-ZnO based device was found to be similar to the n-ZnO based device (11.2 cd/A and 15000 cd/m2). The morphology properties of these two types of ZnO films were investigated by scanning electron microscope (SEM) and atomic force microscope (AFM) measurements. A very smooth surface was achieved for the s-ZnO film. Moreover, the quantum dot (QD) layer on the s-ZnO also possesses high quality with a close packed structure.

UR - https://www.scopus.com/pages/publications/85020455403

U2 - 10.1364/OME.7.002161

DO - 10.1364/OME.7.002161

M3 - 文章

AN - SCOPUS:85020455403

SN - 2159-3930

VL - 7

SP - 2161

EP - 2167

JO - Optical Materials Express

JF - Optical Materials Express

IS - 7

ER -

Highly efficient quantum-dot light emitting diodes with sol-gel ZnO electron contact

Abstract

Access to Document

Other files and links

Fingerprint

Cite this