TY - GEN
T1 - Highly controllable electrochemical deep etching process on silicon
AU - Chen, Yu
AU - Wang, Lianwei
AU - Sarro, P. M.
PY - 2005
Y1 - 2005
N2 - Electrochemical etching processes due to their low-cost and high aspect ratio achievable are a very attractive alternative for deep etching of silicon. In this paper, a highly controllable process with more tolerance for structure design is investigated. Various distributions of design patterns, as well as different experimental conditions, such as light illumination, current modulation and experimental temperature are investigated. An electrochemical etching process in the presence of a magnetic field is also evaluated as a possibility to constrain the boundary effect.
AB - Electrochemical etching processes due to their low-cost and high aspect ratio achievable are a very attractive alternative for deep etching of silicon. In this paper, a highly controllable process with more tolerance for structure design is investigated. Various distributions of design patterns, as well as different experimental conditions, such as light illumination, current modulation and experimental temperature are investigated. An electrochemical etching process in the presence of a magnetic field is also evaluated as a possibility to constrain the boundary effect.
UR - https://www.scopus.com/pages/publications/26844454152
U2 - 10.1109/MEMSYS.2005.1453979
DO - 10.1109/MEMSYS.2005.1453979
M3 - 会议稿件
AN - SCOPUS:26844454152
SN - 0780387325
T3 - Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
SP - 512
EP - 515
BT - Proceedings of the 18th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2005 Miami - Technical Digest
T2 - 18th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2005 Miami
Y2 - 30 January 2005 through 3 February 2005
ER -