Highfield effects of layered perovskite ferroelectric thin films

Pingxiong Yang; Hongmei Deng; Junhao Chu

doi:10.1007/bf02917025

Highfield effects of layered perovskite ferroelectric thin films

Pingxiong Yang^*
, Hongmei Deng
, Junhao Chu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Highfield effects of ferroelectric thin films were studied, taking the system of sandwich structure Pt/Sr-Bi₂Ta₂O₉/Pt (Pt/SBT/Pt) film capacitor as an example. The characterizations and mechanism of leakage current, breakdown and current transient phenomena of ferroelectric thin films were discussed in detail under high electric field. It is found that leakage current mechanism of the films is from space-charge conduction to electrode injection with electric field increasing, that breakdown field of the films has a negative linear variation with the log of the electrode area, and that the characteristics of current transient in the films are not dependent on the polarization reverse. The theoretical analyses were consistent with experimental results.

Original language	English
Pages (from-to)	502-510
Number of pages	9
Journal	Science in China, Series E: Technological Sciences
Volume	41
Issue number	5
DOIs	https://doi.org/10.1007/bf02917025
State	Published - 1998
Externally published	Yes

Keywords

Ferroelectric thin films
Highfield effects
SBT

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10.1007/bf02917025

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title = "Highfield effects of layered perovskite ferroelectric thin films",

abstract = "Highfield effects of ferroelectric thin films were studied, taking the system of sandwich structure Pt/Sr-Bi2Ta2O9/Pt (Pt/SBT/Pt) film capacitor as an example. The characterizations and mechanism of leakage current, breakdown and current transient phenomena of ferroelectric thin films were discussed in detail under high electric field. It is found that leakage current mechanism of the films is from space-charge conduction to electrode injection with electric field increasing, that breakdown field of the films has a negative linear variation with the log of the electrode area, and that the characteristics of current transient in the films are not dependent on the polarization reverse. The theoretical analyses were consistent with experimental results.",

keywords = "Ferroelectric thin films, Highfield effects, SBT",

author = "Pingxiong Yang and Hongmei Deng and Junhao Chu",

year = "1998",

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journal = "Science in China, Series E: Technological Sciences",

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T1 - Highfield effects of layered perovskite ferroelectric thin films

AU - Yang, Pingxiong

AU - Deng, Hongmei

AU - Chu, Junhao

PY - 1998

Y1 - 1998

N2 - Highfield effects of ferroelectric thin films were studied, taking the system of sandwich structure Pt/Sr-Bi2Ta2O9/Pt (Pt/SBT/Pt) film capacitor as an example. The characterizations and mechanism of leakage current, breakdown and current transient phenomena of ferroelectric thin films were discussed in detail under high electric field. It is found that leakage current mechanism of the films is from space-charge conduction to electrode injection with electric field increasing, that breakdown field of the films has a negative linear variation with the log of the electrode area, and that the characteristics of current transient in the films are not dependent on the polarization reverse. The theoretical analyses were consistent with experimental results.

AB - Highfield effects of ferroelectric thin films were studied, taking the system of sandwich structure Pt/Sr-Bi2Ta2O9/Pt (Pt/SBT/Pt) film capacitor as an example. The characterizations and mechanism of leakage current, breakdown and current transient phenomena of ferroelectric thin films were discussed in detail under high electric field. It is found that leakage current mechanism of the films is from space-charge conduction to electrode injection with electric field increasing, that breakdown field of the films has a negative linear variation with the log of the electrode area, and that the characteristics of current transient in the films are not dependent on the polarization reverse. The theoretical analyses were consistent with experimental results.

KW - Ferroelectric thin films

KW - Highfield effects

KW - SBT

UR - https://www.scopus.com/pages/publications/0347626863

U2 - 10.1007/bf02917025

DO - 10.1007/bf02917025

M3 - 文章

AN - SCOPUS:0347626863

SN - 1006-9321

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SP - 502

EP - 510

JO - Science in China, Series E: Technological Sciences

JF - Science in China, Series E: Technological Sciences

IS - 5

ER -

Highfield effects of layered perovskite ferroelectric thin films

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Keywords

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