High thermal stability and fast speed phase change memory by optimizing GeSbTe with Scandium doping

Yong Wang; Tianbo Wang; Guangyu Liu; Tianqi Guo; Tao Li; Shilong Lv; Yan Cheng; Sannian Song; Kun Ren; Zhitang Song

doi:10.1016/j.scriptamat.2019.01.035

High thermal stability and fast speed phase change memory by optimizing GeSbTe with Scandium doping

Yong Wang, Tianbo Wang, Guangyu Liu, Tianqi Guo, Tao Li, Shilong Lv, Yan Cheng, Sannian Song, Kun Ren^*, Zhitang Song

^*Corresponding author for this work

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

Abstract

Phase change materials along the GeTe-Sb isoelectronic tie line are proved to be promising host material for optimization, based on which the well-known golden composition is developed. Here, Sc doped Ge ₂ Sb ₁ Te ₂ has been proposed for phase change memory (PCM) application, showing higher thermal stability and faster operation speed than those of the golden composition. The fast speed of 40 ns, high 10-year data retention of 160 °C, and good endurance of 6×10 ⁵ cycles have made Sc _0.2 Ge ₂ Sb ₁ Te ₂ a promising candidate for PCM application. The impact of Sc on the microstructure is believed to be essential for those improvements in PCM.

Original language	English
Pages (from-to)	25-29
Number of pages	5
Journal	Scripta Materialia
Volume	164
DOIs	https://doi.org/10.1016/j.scriptamat.2019.01.035
State	Published - 15 Apr 2019

Keywords

Fast speed
Ge-Sb-Te alloys
High thermal stability
Phase change memory

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10.1016/j.scriptamat.2019.01.035

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title = "High thermal stability and fast speed phase change memory by optimizing GeSbTe with Scandium doping",

abstract = " Phase change materials along the GeTe-Sb isoelectronic tie line are proved to be promising host material for optimization, based on which the well-known golden composition is developed. Here, Sc doped Ge 2 Sb 1 Te 2 has been proposed for phase change memory (PCM) application, showing higher thermal stability and faster operation speed than those of the golden composition. The fast speed of 40 ns, high 10-year data retention of 160 °C, and good endurance of 6×10 5 cycles have made Sc 0.2 Ge 2 Sb 1 Te 2 a promising candidate for PCM application. The impact of Sc on the microstructure is believed to be essential for those improvements in PCM.",

keywords = "Fast speed, Ge-Sb-Te alloys, High thermal stability, Phase change memory",

author = "Yong Wang and Tianbo Wang and Guangyu Liu and Tianqi Guo and Tao Li and Shilong Lv and Yan Cheng and Sannian Song and Kun Ren and Zhitang Song",

note = "Publisher Copyright: {\textcopyright} 2019 Elsevier Ltd",

year = "2019",

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doi = "10.1016/j.scriptamat.2019.01.035",

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TY - JOUR

T1 - High thermal stability and fast speed phase change memory by optimizing GeSbTe with Scandium doping

AU - Wang, Yong

AU - Wang, Tianbo

AU - Liu, Guangyu

AU - Guo, Tianqi

AU - Li, Tao

AU - Lv, Shilong

AU - Cheng, Yan

AU - Song, Sannian

AU - Ren, Kun

AU - Song, Zhitang

PY - 2019/4/15

Y1 - 2019/4/15

N2 - Phase change materials along the GeTe-Sb isoelectronic tie line are proved to be promising host material for optimization, based on which the well-known golden composition is developed. Here, Sc doped Ge 2 Sb 1 Te 2 has been proposed for phase change memory (PCM) application, showing higher thermal stability and faster operation speed than those of the golden composition. The fast speed of 40 ns, high 10-year data retention of 160 °C, and good endurance of 6×10 5 cycles have made Sc 0.2 Ge 2 Sb 1 Te 2 a promising candidate for PCM application. The impact of Sc on the microstructure is believed to be essential for those improvements in PCM.

AB - Phase change materials along the GeTe-Sb isoelectronic tie line are proved to be promising host material for optimization, based on which the well-known golden composition is developed. Here, Sc doped Ge 2 Sb 1 Te 2 has been proposed for phase change memory (PCM) application, showing higher thermal stability and faster operation speed than those of the golden composition. The fast speed of 40 ns, high 10-year data retention of 160 °C, and good endurance of 6×10 5 cycles have made Sc 0.2 Ge 2 Sb 1 Te 2 a promising candidate for PCM application. The impact of Sc on the microstructure is believed to be essential for those improvements in PCM.

KW - Fast speed

KW - Ge-Sb-Te alloys

KW - High thermal stability

KW - Phase change memory

UR - https://www.scopus.com/pages/publications/85060532605

U2 - 10.1016/j.scriptamat.2019.01.035

DO - 10.1016/j.scriptamat.2019.01.035

M3 - 文章

AN - SCOPUS:85060532605

SN - 1359-6462

VL - 164

SP - 25

EP - 29

JO - Scripta Materialia

JF - Scripta Materialia

ER -

High thermal stability and fast speed phase change memory by optimizing GeSbTe with Scandium doping

Abstract

Keywords

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