High-temperature growth of silica sheathed Bi2S3 semiconductor nanowires

Hao Xu Zhang; Jian Ping Ge; Ya Dong Li

doi:10.1002/cvde.200406334

High-temperature growth of silica sheathed Bi₂S₃ semiconductor nanowires

Hao Xu Zhang^*
, Jian Ping Ge
, Ya Dong Li

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

Silica-sheathed Bi₂S₃ nanowires (that prefer to grow along the c-axis) and monoliform nanowires, have been grown on Si(001) substrates using one-step atmospheric pressure CVD with BiQ₃ and sulfur precursors. The mechanisms concerning the stable chemical species (Bi₂S₃, silica) formed in the reaction atmosphere, the preferred growth direction (the c-axis) of the Bi₂S₃ nanowires, and the formation of the silica sheaths are discussed using the thermodynamic data and the crystal structure of Bi₂S₃.

Original language	English
Pages (from-to)	147-152
Number of pages	6
Journal	Chemical Vapor Deposition
Volume	11
Issue number	3
DOIs	https://doi.org/10.1002/cvde.200406334
State	Published - Mar 2005
Externally published	Yes

Keywords

APCVD
Bismuth sulfide nanowire
Silica sheath

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10.1002/cvde.200406334

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abstract = "Silica-sheathed Bi2S3 nanowires (that prefer to grow along the c-axis) and monoliform nanowires, have been grown on Si(001) substrates using one-step atmospheric pressure CVD with BiQ3 and sulfur precursors. The mechanisms concerning the stable chemical species (Bi2S3, silica) formed in the reaction atmosphere, the preferred growth direction (the c-axis) of the Bi2S3 nanowires, and the formation of the silica sheaths are discussed using the thermodynamic data and the crystal structure of Bi2S3.",

keywords = "APCVD, Bismuth sulfide nanowire, Silica sheath",

author = "Zhang, \{Hao Xu\} and Ge, \{Jian Ping\} and Li, \{Ya Dong\}",

year = "2005",

month = mar,

doi = "10.1002/cvde.200406334",

language = "英语",

volume = "11",

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AU - Zhang, Hao Xu

AU - Ge, Jian Ping

AU - Li, Ya Dong

PY - 2005/3

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N2 - Silica-sheathed Bi2S3 nanowires (that prefer to grow along the c-axis) and monoliform nanowires, have been grown on Si(001) substrates using one-step atmospheric pressure CVD with BiQ3 and sulfur precursors. The mechanisms concerning the stable chemical species (Bi2S3, silica) formed in the reaction atmosphere, the preferred growth direction (the c-axis) of the Bi2S3 nanowires, and the formation of the silica sheaths are discussed using the thermodynamic data and the crystal structure of Bi2S3.

AB - Silica-sheathed Bi2S3 nanowires (that prefer to grow along the c-axis) and monoliform nanowires, have been grown on Si(001) substrates using one-step atmospheric pressure CVD with BiQ3 and sulfur precursors. The mechanisms concerning the stable chemical species (Bi2S3, silica) formed in the reaction atmosphere, the preferred growth direction (the c-axis) of the Bi2S3 nanowires, and the formation of the silica sheaths are discussed using the thermodynamic data and the crystal structure of Bi2S3.

KW - APCVD

KW - Bismuth sulfide nanowire

KW - Silica sheath

UR - https://www.scopus.com/pages/publications/21244477525

U2 - 10.1002/cvde.200406334

DO - 10.1002/cvde.200406334

M3 - 文章

AN - SCOPUS:21244477525

SN - 0948-1907

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EP - 152

JO - Chemical Vapor Deposition

JF - Chemical Vapor Deposition

IS - 3

ER -

High-temperature growth of silica sheathed Bi₂S₃ semiconductor nanowires

Abstract

Keywords

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