High temperature coefficient of resistance for a ferroelectric tunnel junction

Xiaolin Zhao; Jianlu Wang; Bobo Tian; Bolu Liu; Xudong Wang; Hai Huang; Yuhong Zou; Shuo Sun; Tie Lin; Li Han; Jinglan Sun; Xiangjian Meng; Junhao Chu

doi:10.1063/1.4928540

High temperature coefficient of resistance for a ferroelectric tunnel junction

Xiaolin Zhao
, Jianlu Wang^*
, Bobo Tian
, Bolu Liu
, Xudong Wang
, Hai Huang
, Yuhong Zou
, Shuo Sun
, Tie Lin
, Li Han
, Jinglan Sun
, Xiangjian Meng
, Junhao Chu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

An infrared detector is proposed that is based on a ferroelectric tunnel junction (FTJ) working under bolometer-like principles. Electron tunneling, either direct or indirect, through the ferroelectric barrier depends on the temperature of the devices. During tunneling, infrared radiation alters the polarization of the ferroelectric film via pyroelectricity, resulting in a change in the barrier height of the tunnel junction. A high temperature coefficient of resistance of up to-3.86% was observed at room temperature. These results show that the FTJ structure has potential to be adapted for use in uncooled infrared detectors.

Original language	English
Article number	062904
Journal	Applied Physics Letters
Volume	107
Issue number	6
DOIs	https://doi.org/10.1063/1.4928540
State	Published - 10 Aug 2015
Externally published	Yes

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10.1063/1.4928540

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title = "High temperature coefficient of resistance for a ferroelectric tunnel junction",

abstract = "An infrared detector is proposed that is based on a ferroelectric tunnel junction (FTJ) working under bolometer-like principles. Electron tunneling, either direct or indirect, through the ferroelectric barrier depends on the temperature of the devices. During tunneling, infrared radiation alters the polarization of the ferroelectric film via pyroelectricity, resulting in a change in the barrier height of the tunnel junction. A high temperature coefficient of resistance of up to-3.86\% was observed at room temperature. These results show that the FTJ structure has potential to be adapted for use in uncooled infrared detectors.",

author = "Xiaolin Zhao and Jianlu Wang and Bobo Tian and Bolu Liu and Xudong Wang and Hai Huang and Yuhong Zou and Shuo Sun and Tie Lin and Li Han and Jinglan Sun and Xiangjian Meng and Junhao Chu",

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doi = "10.1063/1.4928540",

language = "英语",

volume = "107",

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T1 - High temperature coefficient of resistance for a ferroelectric tunnel junction

AU - Zhao, Xiaolin

AU - Wang, Jianlu

AU - Tian, Bobo

AU - Liu, Bolu

AU - Wang, Xudong

AU - Huang, Hai

AU - Zou, Yuhong

AU - Sun, Shuo

AU - Lin, Tie

AU - Han, Li

AU - Sun, Jinglan

AU - Meng, Xiangjian

AU - Chu, Junhao

PY - 2015/8/10

Y1 - 2015/8/10

N2 - An infrared detector is proposed that is based on a ferroelectric tunnel junction (FTJ) working under bolometer-like principles. Electron tunneling, either direct or indirect, through the ferroelectric barrier depends on the temperature of the devices. During tunneling, infrared radiation alters the polarization of the ferroelectric film via pyroelectricity, resulting in a change in the barrier height of the tunnel junction. A high temperature coefficient of resistance of up to-3.86% was observed at room temperature. These results show that the FTJ structure has potential to be adapted for use in uncooled infrared detectors.

AB - An infrared detector is proposed that is based on a ferroelectric tunnel junction (FTJ) working under bolometer-like principles. Electron tunneling, either direct or indirect, through the ferroelectric barrier depends on the temperature of the devices. During tunneling, infrared radiation alters the polarization of the ferroelectric film via pyroelectricity, resulting in a change in the barrier height of the tunnel junction. A high temperature coefficient of resistance of up to-3.86% was observed at room temperature. These results show that the FTJ structure has potential to be adapted for use in uncooled infrared detectors.

UR - https://www.scopus.com/pages/publications/84939143898

U2 - 10.1063/1.4928540

DO - 10.1063/1.4928540

M3 - 文章

AN - SCOPUS:84939143898

SN - 0003-6951

VL - 107

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

M1 - 062904

ER -

High temperature coefficient of resistance for a ferroelectric tunnel junction

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