High-Speed and High-Responsivity InP-Based Uni-Traveling-Carrier Photodiodes

Qianqian Meng; Hong Wang; Chongyang Liu; Xin Guo; Jianjun Gao; Kian Siong Ang

doi:10.1109/JEDS.2016.2623815

High-Speed and High-Responsivity InP-Based Uni-Traveling-Carrier Photodiodes

Qianqian Meng
, Hong Wang^*
, Chongyang Liu
, Xin Guo
, Jianjun Gao
, Kian Siong Ang

^*Corresponding author for this work

School of Physics and Electronic Science

Nanyang Technological University

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

In this paper, top-illuminated InP-based uni-traveling-carrier photodiodes (UTC-PDs) with dipole-doped structure which achieve both high speed and high responsivity simultaneously have been reported. With optimization of device size and layer structure, dipole-doped UTC-PDs have demonstrated a measured optical-to-electrical 3-dB bandwidth of over 40 GHz and a maximum responsivity of 0.6 A/W at optical input power of 100 mW. By using a semi-analytical equivalent circuit model, the 3-dB bandwidth was predicted to be 103 GHz. This high 3-dB bandwidth and responsivity yield a high figure-of-merit value of 61.8 AW GHz.

Original language	English
Article number	7736106
Pages (from-to)	40-44
Number of pages	5
Journal	IEEE Journal of the Electron Devices Society
Volume	5
Issue number	1
DOIs	https://doi.org/10.1109/JEDS.2016.2623815
State	Published - Jan 2017

Keywords

3-dB bandwidth
Dipole-doped structure
high responsivity
high speed
uni-traveling-carrier photodiode (UTC-PD)

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10.1109/JEDS.2016.2623815

Cite this

@article{723034e635cf47debfd23553a8c3841c,

title = "High-Speed and High-Responsivity InP-Based Uni-Traveling-Carrier Photodiodes",

abstract = "In this paper, top-illuminated InP-based uni-traveling-carrier photodiodes (UTC-PDs) with dipole-doped structure which achieve both high speed and high responsivity simultaneously have been reported. With optimization of device size and layer structure, dipole-doped UTC-PDs have demonstrated a measured optical-to-electrical 3-dB bandwidth of over 40 GHz and a maximum responsivity of 0.6 A/W at optical input power of 100 mW. By using a semi-analytical equivalent circuit model, the 3-dB bandwidth was predicted to be 103 GHz. This high 3-dB bandwidth and responsivity yield a high figure-of-merit value of 61.8 AW GHz.",

keywords = "3-dB bandwidth, Dipole-doped structure, high responsivity, high speed, uni-traveling-carrier photodiode (UTC-PD)",

author = "Qianqian Meng and Hong Wang and Chongyang Liu and Xin Guo and Jianjun Gao and Ang, \{Kian Siong\}",

note = "Publisher Copyright: {\textcopyright} 2013 IEEE.",

year = "2017",

month = jan,

doi = "10.1109/JEDS.2016.2623815",

language = "英语",

volume = "5",

pages = "40--44",

journal = "IEEE Journal of the Electron Devices Society",

issn = "2168-6734",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "1",

}

TY - JOUR

T1 - High-Speed and High-Responsivity InP-Based Uni-Traveling-Carrier Photodiodes

AU - Meng, Qianqian

AU - Wang, Hong

AU - Liu, Chongyang

AU - Guo, Xin

AU - Gao, Jianjun

AU - Ang, Kian Siong

PY - 2017/1

Y1 - 2017/1

N2 - In this paper, top-illuminated InP-based uni-traveling-carrier photodiodes (UTC-PDs) with dipole-doped structure which achieve both high speed and high responsivity simultaneously have been reported. With optimization of device size and layer structure, dipole-doped UTC-PDs have demonstrated a measured optical-to-electrical 3-dB bandwidth of over 40 GHz and a maximum responsivity of 0.6 A/W at optical input power of 100 mW. By using a semi-analytical equivalent circuit model, the 3-dB bandwidth was predicted to be 103 GHz. This high 3-dB bandwidth and responsivity yield a high figure-of-merit value of 61.8 AW GHz.

AB - In this paper, top-illuminated InP-based uni-traveling-carrier photodiodes (UTC-PDs) with dipole-doped structure which achieve both high speed and high responsivity simultaneously have been reported. With optimization of device size and layer structure, dipole-doped UTC-PDs have demonstrated a measured optical-to-electrical 3-dB bandwidth of over 40 GHz and a maximum responsivity of 0.6 A/W at optical input power of 100 mW. By using a semi-analytical equivalent circuit model, the 3-dB bandwidth was predicted to be 103 GHz. This high 3-dB bandwidth and responsivity yield a high figure-of-merit value of 61.8 AW GHz.

KW - 3-dB bandwidth

KW - Dipole-doped structure

KW - high responsivity

KW - high speed

KW - uni-traveling-carrier photodiode (UTC-PD)

UR - https://www.scopus.com/pages/publications/85013025235

U2 - 10.1109/JEDS.2016.2623815

DO - 10.1109/JEDS.2016.2623815

M3 - 文章

AN - SCOPUS:85013025235

SN - 2168-6734

VL - 5

SP - 40

EP - 44

JO - IEEE Journal of the Electron Devices Society

JF - IEEE Journal of the Electron Devices Society

IS - 1

M1 - 7736106

ER -

High-Speed and High-Responsivity InP-Based Uni-Traveling-Carrier Photodiodes

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Keywords

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