TY - JOUR
T1 - High sensitivity of room-temperature sub-terahertz photodetector based on In0.53Ga0.47As material
AU - Qu, Yue
AU - Zhou, Wei
AU - Tong, Jinchao
AU - Yao, Niangjuan
AU - Xu, Xinyue
AU - Hu, Tao
AU - Huang, Zhiming
AU - Chu, Junhao
N1 - Publisher Copyright:
© 2018 The Japan Society of Applied Physics.
PY - 2018/11
Y1 - 2018/11
N2 - A sub-terahertz photodetector based on the narrow-gap semiconductor In0.53Ga0.47As is designed, fabricated, and characterized. The detector exhibits a responsivity up to 515 V/W, a noise equivalent power lower than 20 pW/Hz0.5, a detectivity up to 7.2 × 108 cm•Hz0.5/W, and a response time of 4.1 μs in the sub-terahertz waveband for room-temperature operation. The achieved excellent performance, together with a relatively large detector feature size, simple structure, and easy manufacturing, provide a promising approach to the development of sensitive terahertz room-temperature detectors.
AB - A sub-terahertz photodetector based on the narrow-gap semiconductor In0.53Ga0.47As is designed, fabricated, and characterized. The detector exhibits a responsivity up to 515 V/W, a noise equivalent power lower than 20 pW/Hz0.5, a detectivity up to 7.2 × 108 cm•Hz0.5/W, and a response time of 4.1 μs in the sub-terahertz waveband for room-temperature operation. The achieved excellent performance, together with a relatively large detector feature size, simple structure, and easy manufacturing, provide a promising approach to the development of sensitive terahertz room-temperature detectors.
UR - https://www.scopus.com/pages/publications/85055819226
U2 - 10.7567/APEX.11.112201
DO - 10.7567/APEX.11.112201
M3 - 文章
AN - SCOPUS:85055819226
SN - 1882-0778
VL - 11
JO - Applied Physics Express
JF - Applied Physics Express
IS - 11
M1 - 112201
ER -