High sensitivity of room-temperature sub-terahertz photodetector based on In0.53Ga0.47As material

Yue Qu; Wei Zhou; Jinchao Tong; Niangjuan Yao; Xinyue Xu; Tao Hu; Zhiming Huang; Junhao Chu

doi:10.7567/APEX.11.112201

High sensitivity of room-temperature sub-terahertz photodetector based on In_0.53Ga_0.47As material

Yue Qu
, Wei Zhou
, Jinchao Tong
, Niangjuan Yao
, Xinyue Xu
, Tao Hu
, Zhiming Huang
, Junhao Chu

CAS - Shanghai Institute of Technical Physics
University of Chinese Academy of Sciences

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

A sub-terahertz photodetector based on the narrow-gap semiconductor In_0.53Ga_0.47As is designed, fabricated, and characterized. The detector exhibits a responsivity up to 515 V/W, a noise equivalent power lower than 20 pW/Hz^0.5, a detectivity up to 7.2 × 10⁸ cm•Hz^0.5/W, and a response time of 4.1 μs in the sub-terahertz waveband for room-temperature operation. The achieved excellent performance, together with a relatively large detector feature size, simple structure, and easy manufacturing, provide a promising approach to the development of sensitive terahertz room-temperature detectors.

Original language	English
Article number	112201
Journal	Applied Physics Express
Volume	11
Issue number	11
DOIs	https://doi.org/10.7567/APEX.11.112201
State	Published - Nov 2018
Externally published	Yes

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title = "High sensitivity of room-temperature sub-terahertz photodetector based on In0.53Ga0.47As material",

abstract = "A sub-terahertz photodetector based on the narrow-gap semiconductor In0.53Ga0.47As is designed, fabricated, and characterized. The detector exhibits a responsivity up to 515 V/W, a noise equivalent power lower than 20 pW/Hz0.5, a detectivity up to 7.2 × 108 cm•Hz0.5/W, and a response time of 4.1 μs in the sub-terahertz waveband for room-temperature operation. The achieved excellent performance, together with a relatively large detector feature size, simple structure, and easy manufacturing, provide a promising approach to the development of sensitive terahertz room-temperature detectors.",

author = "Yue Qu and Wei Zhou and Jinchao Tong and Niangjuan Yao and Xinyue Xu and Tao Hu and Zhiming Huang and Junhao Chu",

note = "Publisher Copyright: {\textcopyright} 2018 The Japan Society of Applied Physics.",

year = "2018",

month = nov,

doi = "10.7567/APEX.11.112201",

language = "英语",

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T1 - High sensitivity of room-temperature sub-terahertz photodetector based on In0.53Ga0.47As material

AU - Qu, Yue

AU - Zhou, Wei

AU - Tong, Jinchao

AU - Yao, Niangjuan

AU - Xu, Xinyue

AU - Hu, Tao

AU - Huang, Zhiming

AU - Chu, Junhao

PY - 2018/11

Y1 - 2018/11

N2 - A sub-terahertz photodetector based on the narrow-gap semiconductor In0.53Ga0.47As is designed, fabricated, and characterized. The detector exhibits a responsivity up to 515 V/W, a noise equivalent power lower than 20 pW/Hz0.5, a detectivity up to 7.2 × 108 cm•Hz0.5/W, and a response time of 4.1 μs in the sub-terahertz waveband for room-temperature operation. The achieved excellent performance, together with a relatively large detector feature size, simple structure, and easy manufacturing, provide a promising approach to the development of sensitive terahertz room-temperature detectors.

AB - A sub-terahertz photodetector based on the narrow-gap semiconductor In0.53Ga0.47As is designed, fabricated, and characterized. The detector exhibits a responsivity up to 515 V/W, a noise equivalent power lower than 20 pW/Hz0.5, a detectivity up to 7.2 × 108 cm•Hz0.5/W, and a response time of 4.1 μs in the sub-terahertz waveband for room-temperature operation. The achieved excellent performance, together with a relatively large detector feature size, simple structure, and easy manufacturing, provide a promising approach to the development of sensitive terahertz room-temperature detectors.

UR - https://www.scopus.com/pages/publications/85055819226

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DO - 10.7567/APEX.11.112201

M3 - 文章

AN - SCOPUS:85055819226

SN - 1882-0778

VL - 11

JO - Applied Physics Express

JF - Applied Physics Express

IS - 11

M1 - 112201

ER -

High sensitivity of room-temperature sub-terahertz photodetector based on In_0.53Ga_0.47As material

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