High rate deposition of diamond-like carbon films by magnetically enhanced plasma CVD

Z. Sun; X. Shi; E. Liu

doi:10.1016/S0040-6090(99)00484-8

High rate deposition of diamond-like carbon films by magnetically enhanced plasma CVD

Z. Sun^*
, X. Shi
, E. Liu

^*Corresponding author for this work

Nanyang Technological University

Research output: Contribution to journal › Conference article › peer-review

26 Scopus citations

Abstract

A magnetically enhanced plasma chemical vapor deposition (MEPCVD) system has been developed for the deposition of DLC film without deterioration of the film quality. A perpendicular magnetic field (B) to the electric field was applied in the RF capacitively coupled plasma enhanced (PE) CVD system. Significantly higher levels of ionization are achieved in the MEPCVD system, resulting in much lower self-bias voltage and higher deposition rate. The deposition rate of DLC film can be increased by about one order of magnitude (B at 200 Gauss) by MEPCVD, comparing with the non-magnetic field case. The properties of the DLC film deposited by MEPCVD system were also improved; there is a higher hardness and Young's modulus, and lower surface roughness, compared with that of the DLC film deposited bydeposited by conventional PECVD system.

Original language	English
Pages (from-to)	146-150
Number of pages	5
Journal	Thin Solid Films
Volume	355
DOIs	https://doi.org/10.1016/S0040-6090(99)00484-8
State	Published - 1 Nov 1999
Externally published	Yes
Event	Proceedings of the 1999 26th International Conference on Metallurgic Coatings and Thin Films - San Diego, CA, USA Duration: 12 Apr 1999 → 15 Apr 1999

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title = "High rate deposition of diamond-like carbon films by magnetically enhanced plasma CVD",

abstract = "A magnetically enhanced plasma chemical vapor deposition (MEPCVD) system has been developed for the deposition of DLC film without deterioration of the film quality. A perpendicular magnetic field (B) to the electric field was applied in the RF capacitively coupled plasma enhanced (PE) CVD system. Significantly higher levels of ionization are achieved in the MEPCVD system, resulting in much lower self-bias voltage and higher deposition rate. The deposition rate of DLC film can be increased by about one order of magnitude (B at 200 Gauss) by MEPCVD, comparing with the non-magnetic field case. The properties of the DLC film deposited by MEPCVD system were also improved; there is a higher hardness and Young's modulus, and lower surface roughness, compared with that of the DLC film deposited bydeposited by conventional PECVD system.",

author = "Z. Sun and X. Shi and E. Liu",

year = "1999",

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doi = "10.1016/S0040-6090(99)00484-8",

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journal = "Thin Solid Films",

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TY - JOUR

T1 - High rate deposition of diamond-like carbon films by magnetically enhanced plasma CVD

AU - Sun, Z.

AU - Shi, X.

AU - Liu, E.

PY - 1999/11/1

Y1 - 1999/11/1

N2 - A magnetically enhanced plasma chemical vapor deposition (MEPCVD) system has been developed for the deposition of DLC film without deterioration of the film quality. A perpendicular magnetic field (B) to the electric field was applied in the RF capacitively coupled plasma enhanced (PE) CVD system. Significantly higher levels of ionization are achieved in the MEPCVD system, resulting in much lower self-bias voltage and higher deposition rate. The deposition rate of DLC film can be increased by about one order of magnitude (B at 200 Gauss) by MEPCVD, comparing with the non-magnetic field case. The properties of the DLC film deposited by MEPCVD system were also improved; there is a higher hardness and Young's modulus, and lower surface roughness, compared with that of the DLC film deposited bydeposited by conventional PECVD system.

AB - A magnetically enhanced plasma chemical vapor deposition (MEPCVD) system has been developed for the deposition of DLC film without deterioration of the film quality. A perpendicular magnetic field (B) to the electric field was applied in the RF capacitively coupled plasma enhanced (PE) CVD system. Significantly higher levels of ionization are achieved in the MEPCVD system, resulting in much lower self-bias voltage and higher deposition rate. The deposition rate of DLC film can be increased by about one order of magnitude (B at 200 Gauss) by MEPCVD, comparing with the non-magnetic field case. The properties of the DLC film deposited by MEPCVD system were also improved; there is a higher hardness and Young's modulus, and lower surface roughness, compared with that of the DLC film deposited bydeposited by conventional PECVD system.

UR - https://www.scopus.com/pages/publications/0033354172

U2 - 10.1016/S0040-6090(99)00484-8

DO - 10.1016/S0040-6090(99)00484-8

M3 - 会议文章

AN - SCOPUS:0033354172

SN - 0040-6090

VL - 355

SP - 146

EP - 150

JO - Thin Solid Films

JF - Thin Solid Films

T2 - Proceedings of the 1999 26th International Conference on Metallurgic Coatings and Thin Films

Y2 - 12 April 1999 through 15 April 1999

ER -

High rate deposition of diamond-like carbon films by magnetically enhanced plasma CVD

Abstract

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