TY - JOUR
T1 - High-Q photonic flat-band resonances for enhancing third-harmonic generation in all-dielectric metasurfaces
AU - Sun, Kaili
AU - Wang, Keren
AU - Wang, Wei
AU - Cai, Yangjian
AU - Huang, Lujun
AU - Alù, Andrea
AU - Han, Zhanghua
N1 - Publisher Copyright:
© 2025 The Author(s)
PY - 2025/6/2
Y1 - 2025/6/2
N2 - Nonlinear optical processes are crucial to many applications, such as telecommunications and medical imaging. Traditional materials, however, exhibit only weak optical nonlinearity. High-quality (Q) factor photonic resonances are a promising means of enhancing nonlinear optical processes. Nevertheless, despite significant progress in boosting high-harmonic generations by harnessing high-Q resonances, further improvement of the nonlinear conversion efficiency is sought. Here, we propose a means of achieving flat-band high-Q resonances in all-dielectric metasurfaces featuring distorted photonic lattices. We demonstrate this experimentally in silicon metasurfaces, showing stable high-Q (∼1,600) flat-band resonances that persist over incident angles between −12° and 12° while highlighting optimizations that would further extend the angular range. We then show that these resonances lead to a large enhancement of third-harmonic generation by a factor of nearly 104 times compared to silicon films of the same thickness. The introduced flat-band design unlocks new potential for a broad range of applications, including nonlinear imaging, photodetection, optical signal processing, and data storage, thereby laying the groundwork for the development of next-generation photonic devices.
AB - Nonlinear optical processes are crucial to many applications, such as telecommunications and medical imaging. Traditional materials, however, exhibit only weak optical nonlinearity. High-quality (Q) factor photonic resonances are a promising means of enhancing nonlinear optical processes. Nevertheless, despite significant progress in boosting high-harmonic generations by harnessing high-Q resonances, further improvement of the nonlinear conversion efficiency is sought. Here, we propose a means of achieving flat-band high-Q resonances in all-dielectric metasurfaces featuring distorted photonic lattices. We demonstrate this experimentally in silicon metasurfaces, showing stable high-Q (∼1,600) flat-band resonances that persist over incident angles between −12° and 12° while highlighting optimizations that would further extend the angular range. We then show that these resonances lead to a large enhancement of third-harmonic generation by a factor of nearly 104 times compared to silicon films of the same thickness. The introduced flat-band design unlocks new potential for a broad range of applications, including nonlinear imaging, photodetection, optical signal processing, and data storage, thereby laying the groundwork for the development of next-generation photonic devices.
KW - all-dielectric metasurfaces
KW - flat-band
KW - high-Q resonance
KW - third-harmonic generation
UR - https://www.scopus.com/pages/publications/105010907606
U2 - 10.1016/j.newton.2025.100057
DO - 10.1016/j.newton.2025.100057
M3 - 文章
AN - SCOPUS:105010907606
SN - 2950-6360
VL - 1
JO - Newton
JF - Newton
IS - 4
M1 - 100057
ER -