High photoexcited carrier multiplication by charged InAs dots in AlAs/GaAs/AlAs resonant tunneling diode

Wangping Wang; Ying Hou; Dayuan Xiong; Ning Li; Wei Lu; Wenxing Wang; Hong Chen; Junming Zhou; E. Wu; Heping Zeng

doi:10.1063/1.2832368

High photoexcited carrier multiplication by charged InAs dots in AlAs/GaAs/AlAs resonant tunneling diode

Wangping Wang, Ying Hou, Dayuan Xiong, Ning Li, Wei Lu, Wenxing Wang, Hong Chen, Junming Zhou, E. Wu, Heping Zeng

Institute for Advanced Study in Precision Spectroscopy

Research output: Contribution to journal › Article › peer-review

60 Scopus citations

Abstract

We present an approach for the highly sensitive photon detection based on the quantum dots (QDs) operating at temperature of 77 K. The detection structure is based on an AlAsGaAsAlAs double barrier resonant tunneling diode combined with a layer of self-assembled InAs QDs (QD-RTD). A photon rate of 115 photons per second had induced 10 nA photocurrent in this structure, corresponding to the photoexcited carrier multiplication factor of 107. This high multiplication factor is achieved by the quantum dot induced memory effect and the resonant tunneling tuning effect of QD-RTD structure.

Original language	English
Article number	023508
Journal	Applied Physics Letters
Volume	92
Issue number	2
DOIs	https://doi.org/10.1063/1.2832368
State	Published - 2008

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title = "High photoexcited carrier multiplication by charged InAs dots in AlAs/GaAs/AlAs resonant tunneling diode",

abstract = "We present an approach for the highly sensitive photon detection based on the quantum dots (QDs) operating at temperature of 77 K. The detection structure is based on an AlAsGaAsAlAs double barrier resonant tunneling diode combined with a layer of self-assembled InAs QDs (QD-RTD). A photon rate of 115 photons per second had induced 10 nA photocurrent in this structure, corresponding to the photoexcited carrier multiplication factor of 107. This high multiplication factor is achieved by the quantum dot induced memory effect and the resonant tunneling tuning effect of QD-RTD structure.",

author = "Wangping Wang and Ying Hou and Dayuan Xiong and Ning Li and Wei Lu and Wenxing Wang and Hong Chen and Junming Zhou and E. Wu and Heping Zeng",

year = "2008",

doi = "10.1063/1.2832368",

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T1 - High photoexcited carrier multiplication by charged InAs dots in AlAs/GaAs/AlAs resonant tunneling diode

AU - Wang, Wangping

AU - Hou, Ying

AU - Xiong, Dayuan

AU - Li, Ning

AU - Lu, Wei

AU - Wang, Wenxing

AU - Chen, Hong

AU - Zhou, Junming

AU - Wu, E.

AU - Zeng, Heping

PY - 2008

Y1 - 2008

N2 - We present an approach for the highly sensitive photon detection based on the quantum dots (QDs) operating at temperature of 77 K. The detection structure is based on an AlAsGaAsAlAs double barrier resonant tunneling diode combined with a layer of self-assembled InAs QDs (QD-RTD). A photon rate of 115 photons per second had induced 10 nA photocurrent in this structure, corresponding to the photoexcited carrier multiplication factor of 107. This high multiplication factor is achieved by the quantum dot induced memory effect and the resonant tunneling tuning effect of QD-RTD structure.

AB - We present an approach for the highly sensitive photon detection based on the quantum dots (QDs) operating at temperature of 77 K. The detection structure is based on an AlAsGaAsAlAs double barrier resonant tunneling diode combined with a layer of self-assembled InAs QDs (QD-RTD). A photon rate of 115 photons per second had induced 10 nA photocurrent in this structure, corresponding to the photoexcited carrier multiplication factor of 107. This high multiplication factor is achieved by the quantum dot induced memory effect and the resonant tunneling tuning effect of QD-RTD structure.

UR - https://www.scopus.com/pages/publications/38349147971

U2 - 10.1063/1.2832368

DO - 10.1063/1.2832368

M3 - 文章

AN - SCOPUS:38349147971

SN - 0003-6951

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

M1 - 023508

ER -

High photoexcited carrier multiplication by charged InAs dots in AlAs/GaAs/AlAs resonant tunneling diode

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