TY - JOUR
T1 - High-Performance Tin-Halide Perovskite Transistors Enabled by Multiple A-Cation Engineering
AU - Yang, Xiaomin
AU - Liu, Yu
AU - Yang, Shuzhang
AU - Wu, Yanqiu
AU - Lei, Yusheng
AU - Yang, Yingguo
AU - Liu, Ao
AU - Chu, Junhao
AU - Li, Wenwu
N1 - Publisher Copyright:
© 2024 Wiley-VCH GmbH.
PY - 2024/10/1
Y1 - 2024/10/1
N2 - Metal-halide perovskite semiconductors have garnered great attention in optoelectronic devices due to their remarkable properties and processing capabilities. Among them, tin (Sn2+) perovskites stand out as promising candidates for use as channel layers in high-performance p-channel thin-film transistors (TFTs) owing to their excellent hole transport property. In this study, a multi A-cation approach is applied to pure Sn2+ perovskite, incorporating a small amount (7 mol%) of bulky PEA+ cation. This addition greatly improved the crystallinity and orientation of 3D FA0.9Cs0.1SnI3 perovskite, leading to optimized p-channel Sn2+-perovskite TFT with a hole mobility of ≈18 cm2 V−1 s−1, a high on/off current ratio of 108, and a small subthreshold swing of 0.5 V dec−1. These TFTs also exhibit a low contact resistance of 87 Ω·cm, attributed to the improved electrode/perovskite channel interface. Furthermore, the TFTs are utilized as an electrical characterization platform to study the charge transport properties and interfacial defects using the low-frequency noise method, providing insights into the interface properties of perovskite electronic devices.
AB - Metal-halide perovskite semiconductors have garnered great attention in optoelectronic devices due to their remarkable properties and processing capabilities. Among them, tin (Sn2+) perovskites stand out as promising candidates for use as channel layers in high-performance p-channel thin-film transistors (TFTs) owing to their excellent hole transport property. In this study, a multi A-cation approach is applied to pure Sn2+ perovskite, incorporating a small amount (7 mol%) of bulky PEA+ cation. This addition greatly improved the crystallinity and orientation of 3D FA0.9Cs0.1SnI3 perovskite, leading to optimized p-channel Sn2+-perovskite TFT with a hole mobility of ≈18 cm2 V−1 s−1, a high on/off current ratio of 108, and a small subthreshold swing of 0.5 V dec−1. These TFTs also exhibit a low contact resistance of 87 Ω·cm, attributed to the improved electrode/perovskite channel interface. Furthermore, the TFTs are utilized as an electrical characterization platform to study the charge transport properties and interfacial defects using the low-frequency noise method, providing insights into the interface properties of perovskite electronic devices.
KW - A-cation engineering
KW - low-frequency noise analysis
KW - thin-film transistors
KW - tin halide perovskites
UR - https://www.scopus.com/pages/publications/85195093868
U2 - 10.1002/adfm.202403917
DO - 10.1002/adfm.202403917
M3 - 文章
AN - SCOPUS:85195093868
SN - 1616-301X
VL - 34
JO - Advanced Functional Materials
JF - Advanced Functional Materials
IS - 40
M1 - 2403917
ER -