High-performance organic transistors with high-k dielectrics: A comparative study on solution-processed single crystals and vacuum-deposited polycrystalline films of 2,9-didecyl-dinaphtho[2,3-b:2′,3′-f] thieno[3,2-b]thiophene

W. Ou-Yang; T. Uemura; K. Miyake; S. Onish; T. Kato; M. Katayama; M. Kang; K. Takimiya; M. Ikeda; H. Kuwabara; M. Hamada; J. Takeya

doi:10.1063/1.4769436

High-performance organic transistors with high-k dielectrics: A comparative study on solution-processed single crystals and vacuum-deposited polycrystalline films of 2,9-didecyl-dinaphtho[2,3-b:2′,3′-f] thieno[3,2-b]thiophene

W. Ou-Yang^*
, T. Uemura
, K. Miyake
, S. Onish
, T. Kato
, M. Katayama
, M. Kang
, K. Takimiya
, M. Ikeda
, H. Kuwabara
, M. Hamada
, J. Takeya

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

41 Scopus citations

Abstract

High carrier-mobility organic field-effect transistors are developed employing high-k gate dielectrics so that unprecedentedly high transconductance is realized. 2,9-didecyl-dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b] thiophene (C 10-DNTT) solution-crystallized films are coated on hybrid gate insulators of silane self-assembled monolayers and high-k Al₂ O ₃ formed by atomic-layer-deposition. Intrinsically high carrier mobility exceeding 10 cm²/ Vs in the crystalline C₁₀-DNTT is preserved even on the high-k gate insulators because of suppressed coupling of the field-induced carriers to the polarization of the dielectrics.

Original language	English
Article number	223304
Journal	Applied Physics Letters
Volume	101
Issue number	22
DOIs	https://doi.org/10.1063/1.4769436
State	Published - 26 Nov 2012
Externally published	Yes

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Ou-Yang, W., Uemura, T., Miyake, K., Onish, S., Kato, T., Katayama, M., Kang, M., Takimiya, K., Ikeda, M., Kuwabara, H., Hamada, M., & Takeya, J. (2012). High-performance organic transistors with high-k dielectrics: A comparative study on solution-processed single crystals and vacuum-deposited polycrystalline films of 2,9-didecyl-dinaphtho[2,3-b:2′,3′-f] thieno[3,2-b]thiophene. Applied Physics Letters, 101(22), Article 223304. https://doi.org/10.1063/1.4769436

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title = "High-performance organic transistors with high-k dielectrics: A comparative study on solution-processed single crystals and vacuum-deposited polycrystalline films of 2,9-didecyl-dinaphtho[2,3-b:2′,3′-f] thieno[3,2-b]thiophene",

abstract = "High carrier-mobility organic field-effect transistors are developed employing high-k gate dielectrics so that unprecedentedly high transconductance is realized. 2,9-didecyl-dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b] thiophene (C 10-DNTT) solution-crystallized films are coated on hybrid gate insulators of silane self-assembled monolayers and high-k Al2 O 3 formed by atomic-layer-deposition. Intrinsically high carrier mobility exceeding 10 cm2/ Vs in the crystalline C10-DNTT is preserved even on the high-k gate insulators because of suppressed coupling of the field-induced carriers to the polarization of the dielectrics.",

author = "W. Ou-Yang and T. Uemura and K. Miyake and S. Onish and T. Kato and M. Katayama and M. Kang and K. Takimiya and M. Ikeda and H. Kuwabara and M. Hamada and J. Takeya",

year = "2012",

month = nov,

day = "26",

doi = "10.1063/1.4769436",

language = "英语",

volume = "101",

journal = "Applied Physics Letters",

issn = "0003-6951",

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Ou-Yang, W, Uemura, T, Miyake, K, Onish, S, Kato, T, Katayama, M, Kang, M, Takimiya, K, Ikeda, M, Kuwabara, H, Hamada, M & Takeya, J 2012, 'High-performance organic transistors with high-k dielectrics: A comparative study on solution-processed single crystals and vacuum-deposited polycrystalline films of 2,9-didecyl-dinaphtho[2,3-b:2′,3′-f] thieno[3,2-b]thiophene', Applied Physics Letters, vol. 101, no. 22, 223304. https://doi.org/10.1063/1.4769436

High-performance organic transistors with high-k dielectrics: A comparative study on solution-processed single crystals and vacuum-deposited polycrystalline films of 2,9-didecyl-dinaphtho[2,3-b:2′,3′-f] thieno[3,2-b]thiophene. / Ou-Yang, W.; Uemura, T.; Miyake, K. et al.
In: Applied Physics Letters, Vol. 101, No. 22, 223304, 26.11.2012.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - High-performance organic transistors with high-k dielectrics

T2 - A comparative study on solution-processed single crystals and vacuum-deposited polycrystalline films of 2,9-didecyl-dinaphtho[2,3-b:2′,3′-f] thieno[3,2-b]thiophene

AU - Ou-Yang, W.

AU - Uemura, T.

AU - Miyake, K.

AU - Onish, S.

AU - Kato, T.

AU - Katayama, M.

AU - Kang, M.

AU - Takimiya, K.

AU - Ikeda, M.

AU - Kuwabara, H.

AU - Hamada, M.

AU - Takeya, J.

PY - 2012/11/26

Y1 - 2012/11/26

N2 - High carrier-mobility organic field-effect transistors are developed employing high-k gate dielectrics so that unprecedentedly high transconductance is realized. 2,9-didecyl-dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b] thiophene (C 10-DNTT) solution-crystallized films are coated on hybrid gate insulators of silane self-assembled monolayers and high-k Al2 O 3 formed by atomic-layer-deposition. Intrinsically high carrier mobility exceeding 10 cm2/ Vs in the crystalline C10-DNTT is preserved even on the high-k gate insulators because of suppressed coupling of the field-induced carriers to the polarization of the dielectrics.

AB - High carrier-mobility organic field-effect transistors are developed employing high-k gate dielectrics so that unprecedentedly high transconductance is realized. 2,9-didecyl-dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b] thiophene (C 10-DNTT) solution-crystallized films are coated on hybrid gate insulators of silane self-assembled monolayers and high-k Al2 O 3 formed by atomic-layer-deposition. Intrinsically high carrier mobility exceeding 10 cm2/ Vs in the crystalline C10-DNTT is preserved even on the high-k gate insulators because of suppressed coupling of the field-induced carriers to the polarization of the dielectrics.

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DO - 10.1063/1.4769436

M3 - 文章

AN - SCOPUS:84870573523

SN - 0003-6951

VL - 101

JO - Applied Physics Letters

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ER -

Ou-Yang W, Uemura T, Miyake K, Onish S, Kato T, Katayama M et al. High-performance organic transistors with high-k dielectrics: A comparative study on solution-processed single crystals and vacuum-deposited polycrystalline films of 2,9-didecyl-dinaphtho[2,3-b:2′,3′-f] thieno[3,2-b]thiophene. Applied Physics Letters. 2012 Nov 26;101(22):223304. doi: 10.1063/1.4769436

High-performance organic transistors with high-k dielectrics: A comparative study on solution-processed single crystals and vacuum-deposited polycrystalline films of 2,9-didecyl-dinaphtho[2,3-b:2′,3′-f] thieno[3,2-b]thiophene

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