High-performance lead-free two-dimensional perovskite photo transistors assisted by ferroelectric dielectrics

Haoliang Wang; Yan Chen; Engliang Lim; Xudong Wang; Sijian Yuan; Xin Zhang; Haizhou Lu; Jiao Wang; Guangjian Wu; Tie Lin; Shuo Sun; Jianlu Wang; Yiqiang Zhan; Hong Shen; Xiangjian Meng; Junhao Chu

doi:10.1039/c8tc04691c

High-performance lead-free two-dimensional perovskite photo transistors assisted by ferroelectric dielectrics

Haoliang Wang, Yan Chen, Engliang Lim, Xudong Wang, Sijian Yuan, Xin Zhang, Haizhou Lu, Jiao Wang, Guangjian Wu, Tie Lin, Shuo Sun, Jianlu Wang, Yiqiang Zhan, Hong Shen, Xiangjian Meng, Junhao Chu

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55 Scopus citations

Abstract

The purpose of this research was to understand the effect of a built-in ferroelectric field on the performance of two-dimensional (2D) lead-free perovskite material-based phototransistor applications. In this work, ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) and two-dimensional (2D) lead-free perovskite ((C₆H₅C₂H₄NH₃)₂SnI₄) were utilized as a dielectric layer and a channel layer, respectively. We observed that large hysteresis was successfully eliminated in the transfer curve, as well as the subthreshold swing being significantly reduced by one order of magnitude after P(VDF-TrFE) was introduced as a dielectric layer. Under polarization "up" and "down" states, the device achieved a high photo-switching on/off ratio (>100) and a short photoresponse time (50 ms), respectively. In addition to that, the device also demonstrated a high responsivity of 14.57 A W^-1 and a high detectivity of 1.74 × 10¹² Jones under the polarization "up" state with an illumination intensity of 21 μW cm^-2. In addition, low temperature solution-processed P(VDF-TrFE) and (C₆H₅C₂H₄NH₃)₂SnI₄ (except for the contacts of Au electrodes) in this work are considered to be suitable and compatible for flexible-based phototransistor applications in the future.

Original language	English
Pages (from-to)	12714-12720
Number of pages	7
Journal	Journal of Materials Chemistry C
Volume	6
Issue number	46
DOIs	https://doi.org/10.1039/c8tc04691c
State	Published - 2018
Externally published	Yes

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@article{adc5c46b122c48a3a5ec4b918ca530c9,

title = "High-performance lead-free two-dimensional perovskite photo transistors assisted by ferroelectric dielectrics",

abstract = "The purpose of this research was to understand the effect of a built-in ferroelectric field on the performance of two-dimensional (2D) lead-free perovskite material-based phototransistor applications. In this work, ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) and two-dimensional (2D) lead-free perovskite ((C6H5C2H4NH3)2SnI4) were utilized as a dielectric layer and a channel layer, respectively. We observed that large hysteresis was successfully eliminated in the transfer curve, as well as the subthreshold swing being significantly reduced by one order of magnitude after P(VDF-TrFE) was introduced as a dielectric layer. Under polarization {"}up{"} and {"}down{"} states, the device achieved a high photo-switching on/off ratio (>100) and a short photoresponse time (50 ms), respectively. In addition to that, the device also demonstrated a high responsivity of 14.57 A W-1 and a high detectivity of 1.74 × 1012 Jones under the polarization {"}up{"} state with an illumination intensity of 21 μW cm-2. In addition, low temperature solution-processed P(VDF-TrFE) and (C6H5C2H4NH3)2SnI4 (except for the contacts of Au electrodes) in this work are considered to be suitable and compatible for flexible-based phototransistor applications in the future.",

author = "Haoliang Wang and Yan Chen and Engliang Lim and Xudong Wang and Sijian Yuan and Xin Zhang and Haizhou Lu and Jiao Wang and Guangjian Wu and Tie Lin and Shuo Sun and Jianlu Wang and Yiqiang Zhan and Hong Shen and Xiangjian Meng and Junhao Chu",

note = "Publisher Copyright: {\textcopyright} 2018 The Royal Society of Chemistry.",

year = "2018",

doi = "10.1039/c8tc04691c",

language = "英语",

volume = "6",

pages = "12714--12720",

journal = "Journal of Materials Chemistry C",

issn = "2050-7526",

publisher = "Royal Society of Chemistry",

number = "46",

}

TY - JOUR

T1 - High-performance lead-free two-dimensional perovskite photo transistors assisted by ferroelectric dielectrics

AU - Wang, Haoliang

AU - Chen, Yan

AU - Lim, Engliang

AU - Wang, Xudong

AU - Yuan, Sijian

AU - Zhang, Xin

AU - Lu, Haizhou

AU - Wang, Jiao

AU - Wu, Guangjian

AU - Lin, Tie

AU - Sun, Shuo

AU - Wang, Jianlu

AU - Zhan, Yiqiang

AU - Shen, Hong

AU - Meng, Xiangjian

AU - Chu, Junhao

PY - 2018

Y1 - 2018

N2 - The purpose of this research was to understand the effect of a built-in ferroelectric field on the performance of two-dimensional (2D) lead-free perovskite material-based phototransistor applications. In this work, ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) and two-dimensional (2D) lead-free perovskite ((C6H5C2H4NH3)2SnI4) were utilized as a dielectric layer and a channel layer, respectively. We observed that large hysteresis was successfully eliminated in the transfer curve, as well as the subthreshold swing being significantly reduced by one order of magnitude after P(VDF-TrFE) was introduced as a dielectric layer. Under polarization "up" and "down" states, the device achieved a high photo-switching on/off ratio (>100) and a short photoresponse time (50 ms), respectively. In addition to that, the device also demonstrated a high responsivity of 14.57 A W-1 and a high detectivity of 1.74 × 1012 Jones under the polarization "up" state with an illumination intensity of 21 μW cm-2. In addition, low temperature solution-processed P(VDF-TrFE) and (C6H5C2H4NH3)2SnI4 (except for the contacts of Au electrodes) in this work are considered to be suitable and compatible for flexible-based phototransistor applications in the future.

AB - The purpose of this research was to understand the effect of a built-in ferroelectric field on the performance of two-dimensional (2D) lead-free perovskite material-based phototransistor applications. In this work, ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) and two-dimensional (2D) lead-free perovskite ((C6H5C2H4NH3)2SnI4) were utilized as a dielectric layer and a channel layer, respectively. We observed that large hysteresis was successfully eliminated in the transfer curve, as well as the subthreshold swing being significantly reduced by one order of magnitude after P(VDF-TrFE) was introduced as a dielectric layer. Under polarization "up" and "down" states, the device achieved a high photo-switching on/off ratio (>100) and a short photoresponse time (50 ms), respectively. In addition to that, the device also demonstrated a high responsivity of 14.57 A W-1 and a high detectivity of 1.74 × 1012 Jones under the polarization "up" state with an illumination intensity of 21 μW cm-2. In addition, low temperature solution-processed P(VDF-TrFE) and (C6H5C2H4NH3)2SnI4 (except for the contacts of Au electrodes) in this work are considered to be suitable and compatible for flexible-based phototransistor applications in the future.

UR - https://www.scopus.com/pages/publications/85057467046

U2 - 10.1039/c8tc04691c

DO - 10.1039/c8tc04691c

M3 - 文章

AN - SCOPUS:85057467046

SN - 2050-7526

VL - 6

SP - 12714

EP - 12720

JO - Journal of Materials Chemistry C

JF - Journal of Materials Chemistry C

IS - 46

ER -

High-performance lead-free two-dimensional perovskite photo transistors assisted by ferroelectric dielectrics

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