TY - JOUR
T1 - High-Performance FETs with High-k STO by Optimized van der Waals Heterostructure Interface
AU - Zheng, Yuqing
AU - Wu, Shuaiqin
AU - Wu, Binmin
AU - Liu, Chang
AU - Wang, Huiting
AU - Zhang, Ying
AU - Wang, Lu
AU - Xiong, Ke
AU - Zhou, Yong
AU - Shen, Hong
AU - Lin, Tie
AU - Meng, Xiangjian
AU - Wang, Xudong
AU - Chu, Junhao
AU - Wang, Jianlu
N1 - Publisher Copyright:
© 2025 American Chemical Society.
PY - 2025/4/23
Y1 - 2025/4/23
N2 - The pursuit of suitable insulating layers and high-quality integration methods is important to further improve the performance of field-effect transistors (FETs). In this study, we employ transferable high-k oxide films as device gate dielectrics to fabricate high-quality optoelectronic devices by optimizing the interface between the dielectric material and the two-dimensional (2D) materials. Through meticulous refinement, a transferred film roughness of 269.27 pm was achieved, resulting in intact, crack-free SrTiO3 films. The molybdenum disulfide (MoS2) transistors exhibited remarkable characteristics, including a high on/off ratio (ION/IOFF) of 1 × 108, a subthreshold swing as low as 69.2 mV/dec, and a field-effect mobility reaching 230 cm2/(V·s). Additionally, the SrTiO3 films were combined with molybdenum telluride (MoTe2) to fabricate PN junctions capable of functioning as photodetectors at extremely low operating voltages (±2 V). The exceptional performance of both the MoS2 FETs and the MoTe2 PN junctions can be attributed to the optimized, high-quality dielectric/semiconductor heterojunction interface. This further demonstrates the versatility of the van der Waals integration method employed in this research.
AB - The pursuit of suitable insulating layers and high-quality integration methods is important to further improve the performance of field-effect transistors (FETs). In this study, we employ transferable high-k oxide films as device gate dielectrics to fabricate high-quality optoelectronic devices by optimizing the interface between the dielectric material and the two-dimensional (2D) materials. Through meticulous refinement, a transferred film roughness of 269.27 pm was achieved, resulting in intact, crack-free SrTiO3 films. The molybdenum disulfide (MoS2) transistors exhibited remarkable characteristics, including a high on/off ratio (ION/IOFF) of 1 × 108, a subthreshold swing as low as 69.2 mV/dec, and a field-effect mobility reaching 230 cm2/(V·s). Additionally, the SrTiO3 films were combined with molybdenum telluride (MoTe2) to fabricate PN junctions capable of functioning as photodetectors at extremely low operating voltages (±2 V). The exceptional performance of both the MoS2 FETs and the MoTe2 PN junctions can be attributed to the optimized, high-quality dielectric/semiconductor heterojunction interface. This further demonstrates the versatility of the van der Waals integration method employed in this research.
KW - field-effect transistors
KW - freestanding oxide membranes
KW - high-k material
KW - photodetectors
KW - quasi-van der Waals interface
UR - https://www.scopus.com/pages/publications/105003587660
U2 - 10.1021/acsami.4c21275
DO - 10.1021/acsami.4c21275
M3 - 文章
C2 - 40037924
AN - SCOPUS:105003587660
SN - 1944-8244
VL - 17
SP - 24079
EP - 24086
JO - ACS Applied Materials and Interfaces
JF - ACS Applied Materials and Interfaces
IS - 16
ER -