High-performance BiFe0.95Mn0.05O3 ferroelectric film epitaxially integrated on GaN substrate with LSMO/TiO2 bi-layer buffer

Leilei Xu; Xiaomin Li; Qiuxiang Zhu; Xiaoke Xu; Meng Qin

doi:10.1016/j.matlet.2017.01.125

High-performance BiFe_0.95Mn_0.05O₃ ferroelectric film epitaxially integrated on GaN substrate with LSMO/TiO₂ bi-layer buffer

Leilei Xu, Xiaomin Li, Qiuxiang Zhu, Xiaoke Xu, Meng Qin

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

The highly (1 1 1)-oriented BiFe_0.95Mn_0.05O₃ (BFMO) films owning excellent ferroelectric performance have been epitaxially grown on (0 0 0 2) GaN substrates with La_0.7Sr_0.3MnO₃ (LSMO)/TiO₂ bi-layer buffer by pulsed laser deposition. By means of the LSMO/TiO₂ bi-layer buffer, the lattice mismatch between perovskite (1 1 1) BFMO and wurtzite (0 0 0 2) GaN was miraculously decreased from 12.4% to 1.4%. The remnant ferroelectric polarization and coercive field of the BFMO (1 1 1) film were determined to be 115 μC/cm² and 450 kV/cm, respectively. Compared with the BFMO film deposited on the bare GaN substrate, the remnant ferroelectric polarization was enhanced by 92%. The piezoresponse force microscopy (PFM) image further confirmed that the BFMO (1 1 1) film owned perfect ferroelectric switching properties.

Original language	English
Pages (from-to)	240-243
Number of pages	4
Journal	Materials Letters
Volume	193
DOIs	https://doi.org/10.1016/j.matlet.2017.01.125
State	Published - 15 Apr 2017
Externally published	Yes

Keywords

Bi-layer buffer
Bismuth ferrite
Epitaxial growth
Ferroelectrics
GaN integration

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10.1016/j.matlet.2017.01.125

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@article{a5c905db910141628b1faec183f6763d,

title = "High-performance BiFe0.95Mn0.05O3 ferroelectric film epitaxially integrated on GaN substrate with LSMO/TiO2 bi-layer buffer",

abstract = "The highly (1 1 1)-oriented BiFe0.95Mn0.05O3 (BFMO) films owning excellent ferroelectric performance have been epitaxially grown on (0 0 0 2) GaN substrates with La0.7Sr0.3MnO3 (LSMO)/TiO2 bi-layer buffer by pulsed laser deposition. By means of the LSMO/TiO2 bi-layer buffer, the lattice mismatch between perovskite (1 1 1) BFMO and wurtzite (0 0 0 2) GaN was miraculously decreased from 12.4\% to 1.4\%. The remnant ferroelectric polarization and coercive field of the BFMO (1 1 1) film were determined to be 115 μC/cm2 and 450 kV/cm, respectively. Compared with the BFMO film deposited on the bare GaN substrate, the remnant ferroelectric polarization was enhanced by 92\%. The piezoresponse force microscopy (PFM) image further confirmed that the BFMO (1 1 1) film owned perfect ferroelectric switching properties.",

keywords = "Bi-layer buffer, Bismuth ferrite, Epitaxial growth, Ferroelectrics, GaN integration",

author = "Leilei Xu and Xiaomin Li and Qiuxiang Zhu and Xiaoke Xu and Meng Qin",

note = "Publisher Copyright: {\textcopyright} 2017 Elsevier B.V.",

year = "2017",

month = apr,

day = "15",

doi = "10.1016/j.matlet.2017.01.125",

language = "英语",

volume = "193",

pages = "240--243",

journal = "Materials Letters",

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TY - JOUR

T1 - High-performance BiFe0.95Mn0.05O3 ferroelectric film epitaxially integrated on GaN substrate with LSMO/TiO2 bi-layer buffer

AU - Xu, Leilei

AU - Li, Xiaomin

AU - Zhu, Qiuxiang

AU - Xu, Xiaoke

AU - Qin, Meng

PY - 2017/4/15

Y1 - 2017/4/15

N2 - The highly (1 1 1)-oriented BiFe0.95Mn0.05O3 (BFMO) films owning excellent ferroelectric performance have been epitaxially grown on (0 0 0 2) GaN substrates with La0.7Sr0.3MnO3 (LSMO)/TiO2 bi-layer buffer by pulsed laser deposition. By means of the LSMO/TiO2 bi-layer buffer, the lattice mismatch between perovskite (1 1 1) BFMO and wurtzite (0 0 0 2) GaN was miraculously decreased from 12.4% to 1.4%. The remnant ferroelectric polarization and coercive field of the BFMO (1 1 1) film were determined to be 115 μC/cm2 and 450 kV/cm, respectively. Compared with the BFMO film deposited on the bare GaN substrate, the remnant ferroelectric polarization was enhanced by 92%. The piezoresponse force microscopy (PFM) image further confirmed that the BFMO (1 1 1) film owned perfect ferroelectric switching properties.

AB - The highly (1 1 1)-oriented BiFe0.95Mn0.05O3 (BFMO) films owning excellent ferroelectric performance have been epitaxially grown on (0 0 0 2) GaN substrates with La0.7Sr0.3MnO3 (LSMO)/TiO2 bi-layer buffer by pulsed laser deposition. By means of the LSMO/TiO2 bi-layer buffer, the lattice mismatch between perovskite (1 1 1) BFMO and wurtzite (0 0 0 2) GaN was miraculously decreased from 12.4% to 1.4%. The remnant ferroelectric polarization and coercive field of the BFMO (1 1 1) film were determined to be 115 μC/cm2 and 450 kV/cm, respectively. Compared with the BFMO film deposited on the bare GaN substrate, the remnant ferroelectric polarization was enhanced by 92%. The piezoresponse force microscopy (PFM) image further confirmed that the BFMO (1 1 1) film owned perfect ferroelectric switching properties.

KW - Bi-layer buffer

KW - Bismuth ferrite

KW - Epitaxial growth

KW - Ferroelectrics

KW - GaN integration

UR - https://www.scopus.com/pages/publications/85012111055

U2 - 10.1016/j.matlet.2017.01.125

DO - 10.1016/j.matlet.2017.01.125

M3 - 文章

AN - SCOPUS:85012111055

SN - 0167-577X

VL - 193

SP - 240

EP - 243

JO - Materials Letters

JF - Materials Letters

ER -

High-performance BiFe_0.95Mn_0.05O₃ ferroelectric film epitaxially integrated on GaN substrate with LSMO/TiO₂ bi-layer buffer

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Keywords

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