High-performance β-Ga2O3 thickness dependent solar blind photodetector

Xiaoyu Zhang; Ling Wang; Xudong Wang; Yan Chen; Qianqian Shao; Guangjian Wu; Xianying Wang; Tie Lin; Hong Shen; Jianlu Wang; Xiangjian Meng; Junhao Chu

doi:10.1364/OE.385470

High-performance β-Ga₂O₃ thickness dependent solar blind photodetector

Xiaoyu Zhang, Ling Wang, Xudong Wang, Yan Chen, Qianqian Shao, Guangjian Wu, Xianying Wang, Tie Lin, Hong Shen, Jianlu Wang, Xiangjian Meng, Junhao Chu

Research output: Contribution to journal › Article › peer-review

51 Scopus citations

Abstract

Gallium oxide (Ga₂O₃) has been studied as one of the most promising wide bandgap semiconductors during the past decade. Here, we prepared high quality β-Ga₂O₃ films by pulsed laser deposition. β-Ga₂O₃ films of different thicknesses were achieved and their crystal properties were comprehensively studied. As thickness increases, grain size and surface roughness are both increased. Based on these β-Ga₂O₃ films, a series of ultraviolet (UV) photodetectors with interdigital electrodes structure were prepared. These devices embrace an ultralow dark current of 100 fA, and high photocurrent on/off ratio of 10E8 under UV light illumination. The photoresponse time is 4 ms which is faster than most of previous works. This work paves the way for the potential application of Ga₂O₃ in the field of UV detection.

Original language	English
Pages (from-to)	4169-4177
Number of pages	9
Journal	Optics Express
Volume	28
Issue number	3
DOIs	https://doi.org/10.1364/OE.385470
State	Published - 3 Feb 2020
Externally published	Yes

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title = "High-performance β-Ga2O3 thickness dependent solar blind photodetector",

abstract = "Gallium oxide (Ga2O3) has been studied as one of the most promising wide bandgap semiconductors during the past decade. Here, we prepared high quality β-Ga2O3 films by pulsed laser deposition. β-Ga2O3 films of different thicknesses were achieved and their crystal properties were comprehensively studied. As thickness increases, grain size and surface roughness are both increased. Based on these β-Ga2O3 films, a series of ultraviolet (UV) photodetectors with interdigital electrodes structure were prepared. These devices embrace an ultralow dark current of 100 fA, and high photocurrent on/off ratio of 10E8 under UV light illumination. The photoresponse time is 4 ms which is faster than most of previous works. This work paves the way for the potential application of Ga2O3 in the field of UV detection.",

author = "Xiaoyu Zhang and Ling Wang and Xudong Wang and Yan Chen and Qianqian Shao and Guangjian Wu and Xianying Wang and Tie Lin and Hong Shen and Jianlu Wang and Xiangjian Meng and Junhao Chu",

note = "Publisher Copyright: {\textcopyright} 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement",

year = "2020",

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doi = "10.1364/OE.385470",

language = "英语",

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T1 - High-performance β-Ga2O3 thickness dependent solar blind photodetector

AU - Zhang, Xiaoyu

AU - Wang, Ling

AU - Wang, Xudong

AU - Chen, Yan

AU - Shao, Qianqian

AU - Wu, Guangjian

AU - Wang, Xianying

AU - Lin, Tie

AU - Shen, Hong

AU - Wang, Jianlu

AU - Meng, Xiangjian

AU - Chu, Junhao

PY - 2020/2/3

Y1 - 2020/2/3

N2 - Gallium oxide (Ga2O3) has been studied as one of the most promising wide bandgap semiconductors during the past decade. Here, we prepared high quality β-Ga2O3 films by pulsed laser deposition. β-Ga2O3 films of different thicknesses were achieved and their crystal properties were comprehensively studied. As thickness increases, grain size and surface roughness are both increased. Based on these β-Ga2O3 films, a series of ultraviolet (UV) photodetectors with interdigital electrodes structure were prepared. These devices embrace an ultralow dark current of 100 fA, and high photocurrent on/off ratio of 10E8 under UV light illumination. The photoresponse time is 4 ms which is faster than most of previous works. This work paves the way for the potential application of Ga2O3 in the field of UV detection.

AB - Gallium oxide (Ga2O3) has been studied as one of the most promising wide bandgap semiconductors during the past decade. Here, we prepared high quality β-Ga2O3 films by pulsed laser deposition. β-Ga2O3 films of different thicknesses were achieved and their crystal properties were comprehensively studied. As thickness increases, grain size and surface roughness are both increased. Based on these β-Ga2O3 films, a series of ultraviolet (UV) photodetectors with interdigital electrodes structure were prepared. These devices embrace an ultralow dark current of 100 fA, and high photocurrent on/off ratio of 10E8 under UV light illumination. The photoresponse time is 4 ms which is faster than most of previous works. This work paves the way for the potential application of Ga2O3 in the field of UV detection.

UR - https://www.scopus.com/pages/publications/85078856231

U2 - 10.1364/OE.385470

DO - 10.1364/OE.385470

M3 - 文章

C2 - 32122074

AN - SCOPUS:85078856231

SN - 1094-4087

VL - 28

SP - 4169

EP - 4177

JO - Optics Express

JF - Optics Express

IS - 3

ER -

High-performance β-Ga₂O₃ thickness dependent solar blind photodetector

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