High-Mobility Thin-Film Transistors Based on InZnGeO Channel Layer

Cong Peng; Huixue Huang; Zheng Ma; Fa Hsyang Chen; Guowen Yan; Junfeng Li; Wenwu Li; Xifeng Li; Junhao Chu; Jianhua Zhang

doi:10.1109/TED.2024.3453219

High-Mobility Thin-Film Transistors Based on InZnGeO Channel Layer

Cong Peng, Huixue Huang, Zheng Ma, Fa Hsyang Chen, Guowen Yan, Junfeng Li, Wenwu Li^*, Xifeng Li^*, Junhao Chu, Jianhua Zhang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

In this work, the etch-stopper layer (ESL) structured InZnGeO thin-film transistors (TFTs) were prepared. Here, doping Ge has a high Hall mobility and helps to achieve high mobility, which compares to the mobility of InGaZnO TFT. We investigated the influence of SiO2 ESL deposition temperature on the performance of InZnGeO TFTs. As the ESL deposition temperature increased, the mobility of InZnGeO TFT went up from 23.6 to 41.3 cm² V^-1 s^-1 and the current ratio (I_on /I_off) increased from 1.2× 10⁷ to 4.3× 10⁸. X-ray photoelectron spectroscopy showed that low-temperature deposited ESL has a large amount of hydrogen bonding. The impact of ESL deposition temperature on the distribution of subgap states in InZnGeO thin films is qualitatively analyzed by the Silvaco Atlas 2-D simulator, which reveals that shallow-level subgap defect states can be suppressed by decreasing oxygen-related defects. The results confirmed that Ge doping may be a prospective method for improving the mobility of TFTs with ESL deposited at a high temperature.

Original language	English
Pages (from-to)	6725-6730
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	71
Issue number	11
DOIs	https://doi.org/10.1109/TED.2024.3453219
State	Published - 2024
Externally published	Yes

Keywords

Deposition temperature
InZnGeO thin-film transistor (TFT)
TCAD Simulation
etch-stopper layer (ESL)
high mobility

Access to Document

10.1109/TED.2024.3453219

Cite this

@article{b7ce451c2ad34b97b32bcb70b60c2b7f,

title = "High-Mobility Thin-Film Transistors Based on InZnGeO Channel Layer",

abstract = "In this work, the etch-stopper layer (ESL) structured InZnGeO thin-film transistors (TFTs) were prepared. Here, doping Ge has a high Hall mobility and helps to achieve high mobility, which compares to the mobility of InGaZnO TFT. We investigated the influence of SiO2 ESL deposition temperature on the performance of InZnGeO TFTs. As the ESL deposition temperature increased, the mobility of InZnGeO TFT went up from 23.6 to 41.3 cm2 V-1 s-1 and the current ratio (Ion /Ioff) increased from 1.2× 107 to 4.3× 108. X-ray photoelectron spectroscopy showed that low-temperature deposited ESL has a large amount of hydrogen bonding. The impact of ESL deposition temperature on the distribution of subgap states in InZnGeO thin films is qualitatively analyzed by the Silvaco Atlas 2-D simulator, which reveals that shallow-level subgap defect states can be suppressed by decreasing oxygen-related defects. The results confirmed that Ge doping may be a prospective method for improving the mobility of TFTs with ESL deposited at a high temperature.",

keywords = "Deposition temperature, InZnGeO thin-film transistor (TFT), TCAD Simulation, etch-stopper layer (ESL), high mobility",

author = "Cong Peng and Huixue Huang and Zheng Ma and Chen, \{Fa Hsyang\} and Guowen Yan and Junfeng Li and Wenwu Li and Xifeng Li and Junhao Chu and Jianhua Zhang",

note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2024",

doi = "10.1109/TED.2024.3453219",

language = "英语",

volume = "71",

pages = "6725--6730",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "11",

}

TY - JOUR

T1 - High-Mobility Thin-Film Transistors Based on InZnGeO Channel Layer

AU - Peng, Cong

AU - Huang, Huixue

AU - Ma, Zheng

AU - Chen, Fa Hsyang

AU - Yan, Guowen

AU - Li, Junfeng

AU - Li, Wenwu

AU - Li, Xifeng

AU - Chu, Junhao

AU - Zhang, Jianhua

PY - 2024

Y1 - 2024

N2 - In this work, the etch-stopper layer (ESL) structured InZnGeO thin-film transistors (TFTs) were prepared. Here, doping Ge has a high Hall mobility and helps to achieve high mobility, which compares to the mobility of InGaZnO TFT. We investigated the influence of SiO2 ESL deposition temperature on the performance of InZnGeO TFTs. As the ESL deposition temperature increased, the mobility of InZnGeO TFT went up from 23.6 to 41.3 cm2 V-1 s-1 and the current ratio (Ion /Ioff) increased from 1.2× 107 to 4.3× 108. X-ray photoelectron spectroscopy showed that low-temperature deposited ESL has a large amount of hydrogen bonding. The impact of ESL deposition temperature on the distribution of subgap states in InZnGeO thin films is qualitatively analyzed by the Silvaco Atlas 2-D simulator, which reveals that shallow-level subgap defect states can be suppressed by decreasing oxygen-related defects. The results confirmed that Ge doping may be a prospective method for improving the mobility of TFTs with ESL deposited at a high temperature.

AB - In this work, the etch-stopper layer (ESL) structured InZnGeO thin-film transistors (TFTs) were prepared. Here, doping Ge has a high Hall mobility and helps to achieve high mobility, which compares to the mobility of InGaZnO TFT. We investigated the influence of SiO2 ESL deposition temperature on the performance of InZnGeO TFTs. As the ESL deposition temperature increased, the mobility of InZnGeO TFT went up from 23.6 to 41.3 cm2 V-1 s-1 and the current ratio (Ion /Ioff) increased from 1.2× 107 to 4.3× 108. X-ray photoelectron spectroscopy showed that low-temperature deposited ESL has a large amount of hydrogen bonding. The impact of ESL deposition temperature on the distribution of subgap states in InZnGeO thin films is qualitatively analyzed by the Silvaco Atlas 2-D simulator, which reveals that shallow-level subgap defect states can be suppressed by decreasing oxygen-related defects. The results confirmed that Ge doping may be a prospective method for improving the mobility of TFTs with ESL deposited at a high temperature.

KW - Deposition temperature

KW - InZnGeO thin-film transistor (TFT)

KW - TCAD Simulation

KW - etch-stopper layer (ESL)

KW - high mobility

UR - https://www.scopus.com/pages/publications/85207466270

U2 - 10.1109/TED.2024.3453219

DO - 10.1109/TED.2024.3453219

M3 - 文章

AN - SCOPUS:85207466270

SN - 0018-9383

VL - 71

SP - 6725

EP - 6730

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 11

ER -

High-Mobility Thin-Film Transistors Based on InZnGeO Channel Layer

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this