High Energy Storage Performance of PZO/PTO Multilayers via Interface Engineering

Yuanyuan Zhang; Qianqian Chen; Ruijuan Qi; Hao Shen; Fengrui Sui; Jing Yang; Wei Bai; Xiaodong Tang; Xuefeng Chen; Zhengqian Fu; Genshui Wang; Shujun Zhang

doi:10.1021/acsami.2c21202

High Energy Storage Performance of PZO/PTO Multilayers via Interface Engineering

Yuanyuan Zhang, Qianqian Chen, Ruijuan Qi, Hao Shen, Fengrui Sui, Jing Yang, Wei Bai, Xiaodong Tang, Xuefeng Chen, Zhengqian Fu, Genshui Wang, Shujun Zhang

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

Antiferroelectric thin-film capacitors with ultralow remanent polarization and fast discharge speed have attracted extensive attention for energy storage applications. A multilayer heterostructure is considered to be an efficient approach to enhance the breakdown strength and improve the functionality. Here, we report a high-performance multilayer heterostructure (PbZrO₃/PbTiO₃)_n with a maximum recoverable energy storage density of 36.4 J/cm³ due to its high electric breakdown strength (2.9 MV/cm) through the heterostructure strategy. The positive effect of interfacial blockage and the negative effect of local strain defects competitively affect the breakdown strength, showing an inflection point at n = 3. The atomic-scale characterizations reveal the underlying microstructure mechanism of the interplay between the heterointerface dislocations and the decreased energy storage performance. This work offers the potential of well-designed multilayers with high energy storage performance through heterostructure engineering.

Original language	English
Pages (from-to)	7157-7164
Number of pages	8
Journal	ACS Applied Materials and Interfaces
Volume	15
Issue number	5
DOIs	https://doi.org/10.1021/acsami.2c21202
State	Published - 8 Feb 2023

Keywords

PZO/PTO
antiferroelectric
energy storage
interface engineering
multilayer

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10.1021/acsami.2c21202

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title = "High Energy Storage Performance of PZO/PTO Multilayers via Interface Engineering",

abstract = "Antiferroelectric thin-film capacitors with ultralow remanent polarization and fast discharge speed have attracted extensive attention for energy storage applications. A multilayer heterostructure is considered to be an efficient approach to enhance the breakdown strength and improve the functionality. Here, we report a high-performance multilayer heterostructure (PbZrO3/PbTiO3)n with a maximum recoverable energy storage density of 36.4 J/cm3 due to its high electric breakdown strength (2.9 MV/cm) through the heterostructure strategy. The positive effect of interfacial blockage and the negative effect of local strain defects competitively affect the breakdown strength, showing an inflection point at n = 3. The atomic-scale characterizations reveal the underlying microstructure mechanism of the interplay between the heterointerface dislocations and the decreased energy storage performance. This work offers the potential of well-designed multilayers with high energy storage performance through heterostructure engineering.",

keywords = "PZO/PTO, antiferroelectric, energy storage, interface engineering, multilayer",

author = "Yuanyuan Zhang and Qianqian Chen and Ruijuan Qi and Hao Shen and Fengrui Sui and Jing Yang and Wei Bai and Xiaodong Tang and Xuefeng Chen and Zhengqian Fu and Genshui Wang and Shujun Zhang",

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year = "2023",

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day = "8",

doi = "10.1021/acsami.2c21202",

language = "英语",

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T1 - High Energy Storage Performance of PZO/PTO Multilayers via Interface Engineering

AU - Zhang, Yuanyuan

AU - Chen, Qianqian

AU - Qi, Ruijuan

AU - Shen, Hao

AU - Sui, Fengrui

AU - Yang, Jing

AU - Bai, Wei

AU - Tang, Xiaodong

AU - Chen, Xuefeng

AU - Fu, Zhengqian

AU - Wang, Genshui

AU - Zhang, Shujun

PY - 2023/2/8

Y1 - 2023/2/8

N2 - Antiferroelectric thin-film capacitors with ultralow remanent polarization and fast discharge speed have attracted extensive attention for energy storage applications. A multilayer heterostructure is considered to be an efficient approach to enhance the breakdown strength and improve the functionality. Here, we report a high-performance multilayer heterostructure (PbZrO3/PbTiO3)n with a maximum recoverable energy storage density of 36.4 J/cm3 due to its high electric breakdown strength (2.9 MV/cm) through the heterostructure strategy. The positive effect of interfacial blockage and the negative effect of local strain defects competitively affect the breakdown strength, showing an inflection point at n = 3. The atomic-scale characterizations reveal the underlying microstructure mechanism of the interplay between the heterointerface dislocations and the decreased energy storage performance. This work offers the potential of well-designed multilayers with high energy storage performance through heterostructure engineering.

AB - Antiferroelectric thin-film capacitors with ultralow remanent polarization and fast discharge speed have attracted extensive attention for energy storage applications. A multilayer heterostructure is considered to be an efficient approach to enhance the breakdown strength and improve the functionality. Here, we report a high-performance multilayer heterostructure (PbZrO3/PbTiO3)n with a maximum recoverable energy storage density of 36.4 J/cm3 due to its high electric breakdown strength (2.9 MV/cm) through the heterostructure strategy. The positive effect of interfacial blockage and the negative effect of local strain defects competitively affect the breakdown strength, showing an inflection point at n = 3. The atomic-scale characterizations reveal the underlying microstructure mechanism of the interplay between the heterointerface dislocations and the decreased energy storage performance. This work offers the potential of well-designed multilayers with high energy storage performance through heterostructure engineering.

KW - PZO/PTO

KW - antiferroelectric

KW - energy storage

KW - interface engineering

KW - multilayer

UR - https://www.scopus.com/pages/publications/85147155552

U2 - 10.1021/acsami.2c21202

DO - 10.1021/acsami.2c21202

M3 - 文章

C2 - 36705635

AN - SCOPUS:85147155552

SN - 1944-8244

VL - 15

SP - 7157

EP - 7164

JO - ACS Applied Materials and Interfaces

JF - ACS Applied Materials and Interfaces

IS - 5

ER -

High Energy Storage Performance of PZO/PTO Multilayers via Interface Engineering

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Keywords

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