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High Energy Storage Performance of PZO/PTO Multilayers via Interface Engineering

  • Yuanyuan Zhang*
  • , Qianqian Chen
  • , Ruijuan Qi
  • , Hao Shen
  • , Fengrui Sui
  • , Jing Yang
  • , Wei Bai
  • , Xiaodong Tang*
  • , Xuefeng Chen
  • , Zhengqian Fu
  • , Genshui Wang
  • , Shujun Zhang
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Antiferroelectric thin-film capacitors with ultralow remanent polarization and fast discharge speed have attracted extensive attention for energy storage applications. A multilayer heterostructure is considered to be an efficient approach to enhance the breakdown strength and improve the functionality. Here, we report a high-performance multilayer heterostructure (PbZrO3/PbTiO3)n with a maximum recoverable energy storage density of 36.4 J/cm3 due to its high electric breakdown strength (2.9 MV/cm) through the heterostructure strategy. The positive effect of interfacial blockage and the negative effect of local strain defects competitively affect the breakdown strength, showing an inflection point at n = 3. The atomic-scale characterizations reveal the underlying microstructure mechanism of the interplay between the heterointerface dislocations and the decreased energy storage performance. This work offers the potential of well-designed multilayers with high energy storage performance through heterostructure engineering.

Original languageEnglish
Pages (from-to)7157-7164
Number of pages8
JournalACS Applied Materials and Interfaces
Volume15
Issue number5
DOIs
StatePublished - 8 Feb 2023

Keywords

  • PZO/PTO
  • antiferroelectric
  • energy storage
  • interface engineering
  • multilayer

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