TY - JOUR
T1 - High efficiency polymer electrophosphorescent light-emitting diodes
AU - Gao, Jia
AU - You, Han
AU - Qin, Zhi Pei
AU - Fang, Junfeng
AU - Ma, Dongge
AU - Zhu, Xuhui
AU - Huang, Wei
PY - 2005/8/1
Y1 - 2005/8/1
N2 - We demonstrate high efficiency polymer electrophosphorescent light-emitting diodes based on a new iridium complex tris{diphenyl-(4-pyridin-2-yl-phenyl)- amine}iridium (III) (Ir(dpppa)3) doped into a poly (N-vinyl carbazole) (PVK) host. Electron transporting 1,3,5-tris(2-N- phenylbenzimidazolyl) benzene (TPBI) and hole transporting N,N-bis-(1-naphthyl)- N,N′-diphenyl-1,1′-biphenyl-4, 4′-diamine (NPB) were doped simultaneously into the host to improve the transport balance of the charge carriers and avoid the accumulation of the space charges caused by unbalanced charge transport and direct carrier trapping on Ir(dpppa)3. The effect of the TPBI and NPB concentrations was examined. By optimizing the concentrations of the TPBI and NPB in the blend, the device showed a current efficiency as high as 25.2 cd A-1 at a current density of 0.85 mA cm-2.
AB - We demonstrate high efficiency polymer electrophosphorescent light-emitting diodes based on a new iridium complex tris{diphenyl-(4-pyridin-2-yl-phenyl)- amine}iridium (III) (Ir(dpppa)3) doped into a poly (N-vinyl carbazole) (PVK) host. Electron transporting 1,3,5-tris(2-N- phenylbenzimidazolyl) benzene (TPBI) and hole transporting N,N-bis-(1-naphthyl)- N,N′-diphenyl-1,1′-biphenyl-4, 4′-diamine (NPB) were doped simultaneously into the host to improve the transport balance of the charge carriers and avoid the accumulation of the space charges caused by unbalanced charge transport and direct carrier trapping on Ir(dpppa)3. The effect of the TPBI and NPB concentrations was examined. By optimizing the concentrations of the TPBI and NPB in the blend, the device showed a current efficiency as high as 25.2 cd A-1 at a current density of 0.85 mA cm-2.
UR - https://www.scopus.com/pages/publications/22844437054
U2 - 10.1088/0268-1242/20/8/029
DO - 10.1088/0268-1242/20/8/029
M3 - 文章
AN - SCOPUS:22844437054
SN - 0268-1242
VL - 20
SP - 805
EP - 808
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
IS - 8
ER -