High-efficiency, long-lived lead-free perovskite light-emitting diodes

Wenhao Bai; Tongtong Xuan; Guanhua Ren; Kunjie Song; Huili Li; Chengkai Hu; Fandi Mo; Lixin Wang; Rong Jun Xie

doi:10.1126/science.aeg8955

High-efficiency, long-lived lead-free perovskite light-emitting diodes

Wenhao Bai
, Tongtong Xuan
, Guanhua Ren
, Kunjie Song
, Huili Li
, Chengkai Hu
, Fandi Mo
, Lixin Wang
, Rong Jun Xie

School of Physics and Electronic Science

State Key Laboratory of Physical Chemistry of Solid Surfaces
Xiamen University
Department of Physics
Xiamen Key Laboratory of High Performance Metals and Materials
Department of Vascular Surgery
Fudan University
Department of Vascular Surgery (Xiamen)

Research output: Contribution to journal › Article › peer-review

Abstract

Tin halide perovskite light-emitting diodes (PeLEDs) offer promise due to their solution processability and low toxicity, yet low efficiency and poor stability hinder practical use. We found that electroluminescence failure in CsSnI3 is primarily driven by excessive hole injection-triggered electrochemical Sn2+ oxidation and an irreversible phase transition to Cs2SnI6. Through a dual-side optimization strategy combining formamidine doping with triphenylphosphine oxide modification to stabilize the perovskite lattice, suppress nonradiative recombination, and balance carrier transport, we demonstrate highly efficient near-infrared PeLEDs. These lead-free devices achieve a peak external quantum efficiency of 21.2% at 963 nanometers and a maximum radiance of 195.8 watts per steradian per square meter (W sr-1 m-2). Notably, the operating half-lifetime reaches 920.5 hours at 7.1 W sr-1 m-2, providing pathways for high-performance lead-free PeLEDs.

Original language	English
Pages (from-to)	882-887
Number of pages	6
Journal	Science (New York, N.Y.)
Volume	393
Issue number	6814
DOIs	https://doi.org/10.1126/science.aeg8955
State	Published - 27 Aug 2026

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@article{922af692aee740608866f065526278e1,

title = "High-efficiency, long-lived lead-free perovskite light-emitting diodes",

abstract = "Tin halide perovskite light-emitting diodes (PeLEDs) offer promise due to their solution processability and low toxicity, yet low efficiency and poor stability hinder practical use. We found that electroluminescence failure in CsSnI3 is primarily driven by excessive hole injection-triggered electrochemical Sn2+ oxidation and an irreversible phase transition to Cs2SnI6. Through a dual-side optimization strategy combining formamidine doping with triphenylphosphine oxide modification to stabilize the perovskite lattice, suppress nonradiative recombination, and balance carrier transport, we demonstrate highly efficient near-infrared PeLEDs. These lead-free devices achieve a peak external quantum efficiency of 21.2\% at 963 nanometers and a maximum radiance of 195.8 watts per steradian per square meter (W sr-1 m-2). Notably, the operating half-lifetime reaches 920.5 hours at 7.1 W sr-1 m-2, providing pathways for high-performance lead-free PeLEDs.",

author = "Wenhao Bai and Tongtong Xuan and Guanhua Ren and Kunjie Song and Huili Li and Chengkai Hu and Fandi Mo and Lixin Wang and Xie, \{Rong Jun\}",

year = "2026",

month = aug,

day = "27",

doi = "10.1126/science.aeg8955",

language = "英语",

volume = "393",

pages = "882--887",

journal = "Science (New York, N.Y.)",

issn = "1095-9203",

number = "6814",

}

TY - JOUR

T1 - High-efficiency, long-lived lead-free perovskite light-emitting diodes

AU - Bai, Wenhao

AU - Xuan, Tongtong

AU - Ren, Guanhua

AU - Song, Kunjie

AU - Li, Huili

AU - Hu, Chengkai

AU - Mo, Fandi

AU - Wang, Lixin

AU - Xie, Rong Jun

PY - 2026/8/27

Y1 - 2026/8/27

N2 - Tin halide perovskite light-emitting diodes (PeLEDs) offer promise due to their solution processability and low toxicity, yet low efficiency and poor stability hinder practical use. We found that electroluminescence failure in CsSnI3 is primarily driven by excessive hole injection-triggered electrochemical Sn2+ oxidation and an irreversible phase transition to Cs2SnI6. Through a dual-side optimization strategy combining formamidine doping with triphenylphosphine oxide modification to stabilize the perovskite lattice, suppress nonradiative recombination, and balance carrier transport, we demonstrate highly efficient near-infrared PeLEDs. These lead-free devices achieve a peak external quantum efficiency of 21.2% at 963 nanometers and a maximum radiance of 195.8 watts per steradian per square meter (W sr-1 m-2). Notably, the operating half-lifetime reaches 920.5 hours at 7.1 W sr-1 m-2, providing pathways for high-performance lead-free PeLEDs.

AB - Tin halide perovskite light-emitting diodes (PeLEDs) offer promise due to their solution processability and low toxicity, yet low efficiency and poor stability hinder practical use. We found that electroluminescence failure in CsSnI3 is primarily driven by excessive hole injection-triggered electrochemical Sn2+ oxidation and an irreversible phase transition to Cs2SnI6. Through a dual-side optimization strategy combining formamidine doping with triphenylphosphine oxide modification to stabilize the perovskite lattice, suppress nonradiative recombination, and balance carrier transport, we demonstrate highly efficient near-infrared PeLEDs. These lead-free devices achieve a peak external quantum efficiency of 21.2% at 963 nanometers and a maximum radiance of 195.8 watts per steradian per square meter (W sr-1 m-2). Notably, the operating half-lifetime reaches 920.5 hours at 7.1 W sr-1 m-2, providing pathways for high-performance lead-free PeLEDs.

UR - https://www.scopus.com/pages/publications/105048785928

U2 - 10.1126/science.aeg8955

DO - 10.1126/science.aeg8955

M3 - 文章

C2 - 42658957

AN - SCOPUS:105048785928

SN - 1095-9203

VL - 393

SP - 882

EP - 887

JO - Science (New York, N.Y.)

JF - Science (New York, N.Y.)

IS - 6814

ER -

High-efficiency, long-lived lead-free perovskite light-emitting diodes

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