High-Detectivity and Stable Planar MAPbI/IDT-BT Photodetectors with Assisted MoO Interlayer

  • Keyang Zhao
  • , Jianxiong Zou
  • , Fanming Huang
  • , Tian Tian*
  • , Zhibin Shao
  • , Wei Tian
  • , Junhao Chu
  • , Wenwu Li*
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

Composited with electronic functional materials is an effective way to improve the performance and stability of organic-inorganic hybrid halide perovskite photodetectors. Herein, a planar photoconductive photodetector based on a CH3NH3PbI3 (MAPbI3)/IDT-BT/MoO3 structure was designed and fabricated. Indacenodithiophene-co-benzothiadiazole (IDT-BT) and MoO3 layers are beneficial for photogenerated holes transmission and improve the dissociation efficiency of photogenerated electron-hole pairs. On the other hand, MoO3 as an electron-blocking layer can suppress the dark current. The device displays a fast response time of less than 7 ms, a high responsivity of 11.6 AW-1, and an ultrahigh detectivity up to $5.2\times10$ 13 Jones. In addition, the IDT-BT layer can isolate MAPbI3 from oxygen and water, thus increasing the stable lifetime of devices to more than 20 days. These parameters are several times higher than pristine MAPbI3 photoconductive photodetectors. These results can offer a feasible and effective method for integrating the composite material to improve the performance of perovskite-based devices.

Original languageEnglish
Pages (from-to)6266-6272
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume68
Issue number12
DOIs
StatePublished - 1 Dec 2021
Externally publishedYes

Keywords

  • Dark current
  • detectivity
  • holes transmission
  • interface engineering
  • perovskite photodetectors

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