HgCdTe/black phosphorus van der Waals heterojunction for high-performance polarization-sensitive midwave infrared photodetector

Hanxue Jiao; Xudong Wang; Yan Chen; Shuaifei Guo; Shuaiqin Wu; Chaoyu Song; Shenyang Huang; Xinning Huang; Xiaochi Tai; Tie Lin; Hong Shen; Hugen Yan; Weida Hu; Xiangjian Meng; Junhao Chu; Yuanbo Zhang; Jianlu Wang

doi:10.1126/sciadv.abn1811

HgCdTe/black phosphorus van der Waals heterojunction for high-performance polarization-sensitive midwave infrared photodetector

Hanxue Jiao, Xudong Wang^*, Yan Chen, Shuaifei Guo, Shuaiqin Wu, Chaoyu Song, Shenyang Huang, Xinning Huang, Xiaochi Tai, Tie Lin, Hong Shen, Hugen Yan, Weida Hu, Xiangjian Meng, Junhao Chu, Yuanbo Zhang, Jianlu Wang^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

124 Scopus citations

Abstract

New-generation infrared detectors call for higher operation temperature and polarization sensitivity. For traditional HgCdTe infrared detectors, the additional polarization optics and cryogenic cooling are necessary to achieve high-performance infrared polarization detection, while they can complicate this system and limit the integration. Here, a mixed-dimensional HgCdTe/black phosphorous van der Waals heterojunction photodiode is proposed for polarization-sensitive midwave infrared photodetection. Benefiting from van der Waals integration, type III broken-gap band alignment heterojunctions are achieved. Anisotropy optical properties of black phosphorous bring polarization sensitivity from visible light to midwave infrared without external optics. Our devices show an outstanding performance at room temperature without applied bias, with peak blackbody detectivity as high as 7.93 × 10¹⁰ cm Hz^1/2 W⁻¹ and average blackbody detectivity over 2.1 × 10¹⁰ cm Hz^1/2 W⁻¹ in midwave infrared region. This strategy offers a possible practical solution for next-generation infrared detector with high operation temperature, high performance, and multi-information acquisition.

Original language	English
Article number	eabn1811
Journal	Science Advances
Volume	8
Issue number	19
DOIs	https://doi.org/10.1126/sciadv.abn1811
State	Published - May 2022
Externally published	Yes

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Jiao, H., Wang, X., Chen, Y., Guo, S., Wu, S., Song, C., Huang, S., Huang, X., Tai, X., Lin, T., Shen, H., Yan, H., Hu, W., Meng, X., Chu, J., Zhang, Y., & Wang, J. (2022). HgCdTe/black phosphorus van der Waals heterojunction for high-performance polarization-sensitive midwave infrared photodetector. Science Advances, 8(19), Article eabn1811. https://doi.org/10.1126/sciadv.abn1811

@article{7f37adf1dcdf4848af86170e27f6f478,

title = "HgCdTe/black phosphorus van der Waals heterojunction for high-performance polarization-sensitive midwave infrared photodetector",

abstract = "New-generation infrared detectors call for higher operation temperature and polarization sensitivity. For traditional HgCdTe infrared detectors, the additional polarization optics and cryogenic cooling are necessary to achieve high-performance infrared polarization detection, while they can complicate this system and limit the integration. Here, a mixed-dimensional HgCdTe/black phosphorous van der Waals heterojunction photodiode is proposed for polarization-sensitive midwave infrared photodetection. Benefiting from van der Waals integration, type III broken-gap band alignment heterojunctions are achieved. Anisotropy optical properties of black phosphorous bring polarization sensitivity from visible light to midwave infrared without external optics. Our devices show an outstanding performance at room temperature without applied bias, with peak blackbody detectivity as high as 7.93 × 1010 cm Hz1/2 W−1 and average blackbody detectivity over 2.1 × 1010 cm Hz1/2 W−1 in midwave infrared region. This strategy offers a possible practical solution for next-generation infrared detector with high operation temperature, high performance, and multi-information acquisition.",

author = "Hanxue Jiao and Xudong Wang and Yan Chen and Shuaifei Guo and Shuaiqin Wu and Chaoyu Song and Shenyang Huang and Xinning Huang and Xiaochi Tai and Tie Lin and Hong Shen and Hugen Yan and Weida Hu and Xiangjian Meng and Junhao Chu and Yuanbo Zhang and Jianlu Wang",

note = "Publisher Copyright: Copyright {\textcopyright} 2022 The Authors,",

year = "2022",

month = may,

doi = "10.1126/sciadv.abn1811",

language = "英语",

volume = "8",

journal = "Science Advances",

issn = "2375-2548",

publisher = "American Association for the Advancement of Science",

number = "19",

}

TY - JOUR

T1 - HgCdTe/black phosphorus van der Waals heterojunction for high-performance polarization-sensitive midwave infrared photodetector

AU - Jiao, Hanxue

AU - Wang, Xudong

AU - Chen, Yan

AU - Guo, Shuaifei

AU - Wu, Shuaiqin

AU - Song, Chaoyu

AU - Huang, Shenyang

AU - Huang, Xinning

AU - Tai, Xiaochi

AU - Lin, Tie

AU - Shen, Hong

AU - Yan, Hugen

AU - Hu, Weida

AU - Meng, Xiangjian

AU - Chu, Junhao

AU - Zhang, Yuanbo

AU - Wang, Jianlu

PY - 2022/5

Y1 - 2022/5

N2 - New-generation infrared detectors call for higher operation temperature and polarization sensitivity. For traditional HgCdTe infrared detectors, the additional polarization optics and cryogenic cooling are necessary to achieve high-performance infrared polarization detection, while they can complicate this system and limit the integration. Here, a mixed-dimensional HgCdTe/black phosphorous van der Waals heterojunction photodiode is proposed for polarization-sensitive midwave infrared photodetection. Benefiting from van der Waals integration, type III broken-gap band alignment heterojunctions are achieved. Anisotropy optical properties of black phosphorous bring polarization sensitivity from visible light to midwave infrared without external optics. Our devices show an outstanding performance at room temperature without applied bias, with peak blackbody detectivity as high as 7.93 × 1010 cm Hz1/2 W−1 and average blackbody detectivity over 2.1 × 1010 cm Hz1/2 W−1 in midwave infrared region. This strategy offers a possible practical solution for next-generation infrared detector with high operation temperature, high performance, and multi-information acquisition.

AB - New-generation infrared detectors call for higher operation temperature and polarization sensitivity. For traditional HgCdTe infrared detectors, the additional polarization optics and cryogenic cooling are necessary to achieve high-performance infrared polarization detection, while they can complicate this system and limit the integration. Here, a mixed-dimensional HgCdTe/black phosphorous van der Waals heterojunction photodiode is proposed for polarization-sensitive midwave infrared photodetection. Benefiting from van der Waals integration, type III broken-gap band alignment heterojunctions are achieved. Anisotropy optical properties of black phosphorous bring polarization sensitivity from visible light to midwave infrared without external optics. Our devices show an outstanding performance at room temperature without applied bias, with peak blackbody detectivity as high as 7.93 × 1010 cm Hz1/2 W−1 and average blackbody detectivity over 2.1 × 1010 cm Hz1/2 W−1 in midwave infrared region. This strategy offers a possible practical solution for next-generation infrared detector with high operation temperature, high performance, and multi-information acquisition.

UR - https://www.scopus.com/pages/publications/85129967875

U2 - 10.1126/sciadv.abn1811

DO - 10.1126/sciadv.abn1811

M3 - 文章

C2 - 35544556

AN - SCOPUS:85129967875

SN - 2375-2548

VL - 8

JO - Science Advances

JF - Science Advances

IS - 19

M1 - eabn1811

ER -

HgCdTe/black phosphorus van der Waals heterojunction for high-performance polarization-sensitive midwave infrared photodetector

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