HfO₂-SiO₂ Hybrid Bonding Technology Applied for High-Density 3D Integrated Devices

Jinzhu Li; Yanming Liu; Ziyu Liu; He Tian; Yabin Sun; David Wei Zhang

doi:10.1109/LED.2025.3601394

HfO₂-SiO₂ Hybrid Bonding Technology Applied for High-Density 3D Integrated Devices

Jinzhu Li
, Yanming Liu
, Ziyu Liu^*
, He Tian^*
, Yabin Sun^*
, David Wei Zhang

^*Corresponding author for this work

School of Communication and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

A HfO₂ -SiO₂ hybrid bonding technology applied for three-dimensional memristor integration is developed, and the bonding mechanism is deeply studied. This bonding method mainly includes three steps: 1) surface treatment of the bonding interface of HfO₂ and SiO₂ using Ar plasma and 3% ammonia solution treatment, which increases the hydroxyl density on the bonding surface; 2) pre-bonding at 100°C in an atmospheric environment to remove water molecule from the suspended hydroxyl group at the HfO₂ -SiO₂ interface; and 3) a laser rapid annealing process (LRAP) at 400°C for 5 seconds to further strengthen the bond strength of Hf-O-Si chemical bonds formed at the bonding interface. This technology enables the successful fabrication of a novel 3D memristors. Furthermore, this work offers innovative design strategies for next-generation 3D architecture devices.

Original language	English
Pages (from-to)	1917-1919
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	46
Issue number	10
DOIs	https://doi.org/10.1109/LED.2025.3601394
State	Published - 2025

Keywords

HfO₂ -SiO₂ bonding
laser annealing
three-dimensional memristors

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10.1109/LED.2025.3601394

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@article{20506a4c7fee4460b03f8e71782d4911,

title = "HfO₂-SiO₂ Hybrid Bonding Technology Applied for High-Density 3D Integrated Devices",

abstract = "A HfO2 -SiO2 hybrid bonding technology applied for three-dimensional memristor integration is developed, and the bonding mechanism is deeply studied. This bonding method mainly includes three steps: 1) surface treatment of the bonding interface of HfO2 and SiO2 using Ar plasma and 3\% ammonia solution treatment, which increases the hydroxyl density on the bonding surface; 2) pre-bonding at 100°C in an atmospheric environment to remove water molecule from the suspended hydroxyl group at the HfO2 -SiO2 interface; and 3) a laser rapid annealing process (LRAP) at 400°C for 5 seconds to further strengthen the bond strength of Hf-O-Si chemical bonds formed at the bonding interface. This technology enables the successful fabrication of a novel 3D memristors. Furthermore, this work offers innovative design strategies for next-generation 3D architecture devices.",

keywords = "HfO₂ -SiO₂ bonding, laser annealing, three-dimensional memristors",

author = "Jinzhu Li and Yanming Liu and Ziyu Liu and He Tian and Yabin Sun and Zhang, \{David Wei\}",

note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

year = "2025",

doi = "10.1109/LED.2025.3601394",

language = "英语",

volume = "46",

pages = "1917--1919",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "10",

}

TY - JOUR

T1 - HfO₂-SiO₂ Hybrid Bonding Technology Applied for High-Density 3D Integrated Devices

AU - Li, Jinzhu

AU - Liu, Yanming

AU - Liu, Ziyu

AU - Tian, He

AU - Sun, Yabin

AU - Zhang, David Wei

PY - 2025

Y1 - 2025

N2 - A HfO2 -SiO2 hybrid bonding technology applied for three-dimensional memristor integration is developed, and the bonding mechanism is deeply studied. This bonding method mainly includes three steps: 1) surface treatment of the bonding interface of HfO2 and SiO2 using Ar plasma and 3% ammonia solution treatment, which increases the hydroxyl density on the bonding surface; 2) pre-bonding at 100°C in an atmospheric environment to remove water molecule from the suspended hydroxyl group at the HfO2 -SiO2 interface; and 3) a laser rapid annealing process (LRAP) at 400°C for 5 seconds to further strengthen the bond strength of Hf-O-Si chemical bonds formed at the bonding interface. This technology enables the successful fabrication of a novel 3D memristors. Furthermore, this work offers innovative design strategies for next-generation 3D architecture devices.

AB - A HfO2 -SiO2 hybrid bonding technology applied for three-dimensional memristor integration is developed, and the bonding mechanism is deeply studied. This bonding method mainly includes three steps: 1) surface treatment of the bonding interface of HfO2 and SiO2 using Ar plasma and 3% ammonia solution treatment, which increases the hydroxyl density on the bonding surface; 2) pre-bonding at 100°C in an atmospheric environment to remove water molecule from the suspended hydroxyl group at the HfO2 -SiO2 interface; and 3) a laser rapid annealing process (LRAP) at 400°C for 5 seconds to further strengthen the bond strength of Hf-O-Si chemical bonds formed at the bonding interface. This technology enables the successful fabrication of a novel 3D memristors. Furthermore, this work offers innovative design strategies for next-generation 3D architecture devices.

KW - HfO₂ -SiO₂ bonding

KW - laser annealing

KW - three-dimensional memristors

UR - https://www.scopus.com/pages/publications/105014000958

U2 - 10.1109/LED.2025.3601394

DO - 10.1109/LED.2025.3601394

M3 - 文章

AN - SCOPUS:105014000958

SN - 0741-3106

VL - 46

SP - 1917

EP - 1919

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 10

ER -

HfO₂-SiO₂ Hybrid Bonding Technology Applied for High-Density 3D Integrated Devices

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Keywords

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